Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Characterization of defects and research on impulse aging in ZnO varistor ceramics

Zhao Xue-Tong Li Jian-Ying Li Xuan Li Sheng-Tao

Characterization of defects and research on impulse aging in ZnO varistor ceramics

Zhao Xue-Tong, Li Jian-Ying, Li Xuan, Li Sheng-Tao
PDF
Get Citation
  • The electrical and dielectric properties and the microstructures of a polynary ZnO-based varistor ceramics with 14000 times impulse current aging test are measured. The relationship between defect structure and impulse current aging is mainly investigated. It is found that the electrical properties decrease rapidly with impulse aging and the dimensional effect of ZnO varistor ceramics is dominated not only by grain but also by grain boundary. Additionally, four defect relaxations are found at different temperatures by using dielectric spectra. Two defect relaxations appearing below -60 ℃ with activation energies about 0.24 eV and 0.35 eV are identified to be intrinsic defects originating from interstitial Zn L(Zni··) and vacancy oxygen L(VO·), which are not affected by impulse current aging. Other two relaxations appearing above 80 °C are suggested to be extrinsic defects originating from trap levels L(ingr) at intergranular phase and trap levels L(gb) at grain-boundary interfaces, respectively. Only L(gb) decreases from 0.84 eV to 0.76 eV due to impulse current aging while other trap levels keep unchanged. It is further proposed that L(gb) is responsible mainly for the electrical property and stability of ZnO ceramics.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 50977071 and 51177121).
    [1]

    Gupta T K, Straub W D 1989 J. Appl. Phys. 66 6132

    [2]

    Xu D, Shi L Y, Wu Z H, Zhong Q D, Wu X X 2009 J. Eur. Ceram. Soc. 29 1789

    [3]

    Fayat J, Castro M S 2003 J. Eur. Ceram. Soc. 23 1585

    [4]

    Cordaro J F, Shim Y, May J E 1986 J. Appl. Phys. 60 4186

    [5]

    Chiou B S, Chung M C 1991 J. Electron. Mat. 20 885

    [6]

    Greuter F, Blatter G 1990 Semicond. Sci. Technol. 5 111

    [7]

    Levinson L M, Philipp H R 1976 J. Appl. Phys. 47 1117

    [8]

    Cheng P F, Li S T, Li J Y 2009 Acta Phys. Sin. 58 5721 (in Chinese) [成鹏飞, 李盛涛, 李建英 2009 物理学报 58 5721]

    [9]

    Cheng P, Li S, Zhang L, Li J 2008 Appl. Phys. Lett. 93 012902

    [10]

    Rohatgi A, Pang S K, Gupta T K, Straub W D 1988 J. Appl. Phys. 63 5375

    [11]

    Lee W I, Young R L 1996 Appl. Phys. Lett. 69 526

    [12]

    Li F F, Wang S L, Xu Y C 1993 Proceedings of the CSEE 3 25 (in Chinese) [李慧峰, 王士良, 许毓春 1993 中国电机工程学报(增刊) 3 25]

    [13]

    Li S T, Li J Y, Alim M A 2003 J. Electroceram 11 119

    [14]

    Yin G L, Li J Y, Yao G, Cheng P F, Li S T 2010 Acta Phys. Sin. 59 6345 (in Chinese) [尹桂来, 李建英, 尧广, 成鹏飞, 李盛涛 2010 物理学报 59 6345]

    [15]

    Chen J D, Liu Z Y, 1982 Dielectric Physics (Beijing: Mechanical Industry Press) p151 (in Chinese) [陈季丹, 刘子玉 1982 电介质物理学 (北京: 机械工业出版社) 第151页]

    [16]

    Tripathi R, Kumar A, Bharti C, Sinha T P 2010 Curr. Appl. Phys. 10 676

    [17]

    Roling B, Happe A, Funke K, Ingram M D 1997 Phys. Rev. Lett. 78 2160

    [18]

    Hong Y W, Kim J H 2004 Ceram. Int. 30 1307

    [19]

    Andres-Verges M, West A R 1997 J. Electroceram. 1 125

    [20]

    Tao M, Ai B, Dorlanne O, Loubiere A 1986 J. Appl. Phys. 61 1562

    [21]

    Leach C, Vernon-Parry K D, Ali N K 2010 J. Elctroceram. 25 188

    [22]

    Yin G L, Li J Y, Li S T 2009 Acta Phys. Sin. 58 4219 (in Chinese) [尹桂来, 李建英, 李盛涛 2009 物理学报 58 4219]

  • [1]

    Gupta T K, Straub W D 1989 J. Appl. Phys. 66 6132

    [2]

    Xu D, Shi L Y, Wu Z H, Zhong Q D, Wu X X 2009 J. Eur. Ceram. Soc. 29 1789

    [3]

    Fayat J, Castro M S 2003 J. Eur. Ceram. Soc. 23 1585

    [4]

    Cordaro J F, Shim Y, May J E 1986 J. Appl. Phys. 60 4186

    [5]

    Chiou B S, Chung M C 1991 J. Electron. Mat. 20 885

    [6]

    Greuter F, Blatter G 1990 Semicond. Sci. Technol. 5 111

    [7]

    Levinson L M, Philipp H R 1976 J. Appl. Phys. 47 1117

    [8]

    Cheng P F, Li S T, Li J Y 2009 Acta Phys. Sin. 58 5721 (in Chinese) [成鹏飞, 李盛涛, 李建英 2009 物理学报 58 5721]

    [9]

    Cheng P, Li S, Zhang L, Li J 2008 Appl. Phys. Lett. 93 012902

    [10]

    Rohatgi A, Pang S K, Gupta T K, Straub W D 1988 J. Appl. Phys. 63 5375

    [11]

    Lee W I, Young R L 1996 Appl. Phys. Lett. 69 526

    [12]

    Li F F, Wang S L, Xu Y C 1993 Proceedings of the CSEE 3 25 (in Chinese) [李慧峰, 王士良, 许毓春 1993 中国电机工程学报(增刊) 3 25]

    [13]

    Li S T, Li J Y, Alim M A 2003 J. Electroceram 11 119

    [14]

    Yin G L, Li J Y, Yao G, Cheng P F, Li S T 2010 Acta Phys. Sin. 59 6345 (in Chinese) [尹桂来, 李建英, 尧广, 成鹏飞, 李盛涛 2010 物理学报 59 6345]

    [15]

    Chen J D, Liu Z Y, 1982 Dielectric Physics (Beijing: Mechanical Industry Press) p151 (in Chinese) [陈季丹, 刘子玉 1982 电介质物理学 (北京: 机械工业出版社) 第151页]

    [16]

    Tripathi R, Kumar A, Bharti C, Sinha T P 2010 Curr. Appl. Phys. 10 676

    [17]

    Roling B, Happe A, Funke K, Ingram M D 1997 Phys. Rev. Lett. 78 2160

    [18]

    Hong Y W, Kim J H 2004 Ceram. Int. 30 1307

    [19]

    Andres-Verges M, West A R 1997 J. Electroceram. 1 125

    [20]

    Tao M, Ai B, Dorlanne O, Loubiere A 1986 J. Appl. Phys. 61 1562

    [21]

    Leach C, Vernon-Parry K D, Ali N K 2010 J. Elctroceram. 25 188

    [22]

    Yin G L, Li J Y, Li S T 2009 Acta Phys. Sin. 58 4219 (in Chinese) [尹桂来, 李建英, 李盛涛 2009 物理学报 58 4219]

  • [1] Cheng Peng-Fei, Yin Gui-Lai, Li Jian-Ying, Yao Guang, Li Sheng-Tao. Research on electronic process of impulse degradation of ZnO-based ceramics. Acta Physica Sinica, 2010, 59(9): 6345-6350. doi: 10.7498/aps.59.6345
    [2] Wang Hui, Lin Jia-Jun, He Jin-Qiang, Liao Yong-Li, Li Sheng-Tao. The effects of precipitant on the defect structures and properties of ZnO varistor ceramics. Acta Physica Sinica, 2013, 62(22): 226103. doi: 10.7498/aps.62.226103
    [3] Zhao Xiao-Qiang, Zhao Xue-Tong, Xu Chao, Li Wei-Wei, Ren Lu-Lu, Liao Rui-Jin, Li Jian-Ying. Recent research progress of relaxation performances of defects in ZnO-Bi2O3 varistor ceamics. Acta Physica Sinica, 2017, 66(2): 027701. doi: 10.7498/aps.66.027701
    [4] Zhao Xue-Tong, Li Jian-Ying, Jia Ran, Li Sheng-Tao. The Effect of DC degradation and heat-treatment on defects in ZnO varistor. Acta Physica Sinica, 2013, 62(7): 077701. doi: 10.7498/aps.62.077701
    [5] Cheng Peng-Fei, Li Sheng-Tao, Zhao-Lei, Li Jian-Ying. Study of intrinsic defects in ZnO varistor ceramics by dielectric spectroscopy. Acta Physica Sinica, 2009, 58(1): 523-528. doi: 10.7498/aps.58.523
    [6] Cheng Peng-Fei, Li Sheng-Tao, Li Jian-Ying. Grainboundary electronic structure of ZnO-Bi2O3 based varistor ceramics. Acta Physica Sinica, 2010, 59(1): 560-565. doi: 10.7498/aps.59.560
    [7] Cheng Peng-Fei, Li Sheng-Tao, Li Jian-Ying. Dielectric spectra of ZnO varistor ceramics. Acta Physica Sinica, 2012, 61(18): 187302. doi: 10.7498/aps.61.187302
    [8] Cheng Peng-Fei, Li Sheng-Tao, Li Jian-Ying. Dielectric loss of ZnO varistor ceramics by variable temperature spectroscopy. Acta Physica Sinica, 2009, 58(8): 5721-5725. doi: 10.7498/aps.58.5721
    [9] Li Sheng-Tao, Cheng Peng-Fei, Yang Yan, Zhang Le. A new method for investigating the conduction of ZnO-based varistor ceramics. Acta Physica Sinica, 2009, 58(4): 2543-2548. doi: 10.7498/aps.58.2543
    [10] Cheng Peng-Fei, Li Sheng-Tao, Jiao Xing-Liu. The conduction process and the equivalent barrier height in ZnO-Bi2O3 based varistor ceramics. Acta Physica Sinica, 2006, 55(8): 4253-4258. doi: 10.7498/aps.55.4253
  • Citation:
Metrics
  • Abstract views:  1825
  • PDF Downloads:  615
  • Cited By: 0
Publishing process
  • Received Date:  30 November 2011
  • Accepted Date:  31 December 2011
  • Published Online:  05 August 2012

Characterization of defects and research on impulse aging in ZnO varistor ceramics

  • 1. State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos. 50977071 and 51177121).

Abstract: The electrical and dielectric properties and the microstructures of a polynary ZnO-based varistor ceramics with 14000 times impulse current aging test are measured. The relationship between defect structure and impulse current aging is mainly investigated. It is found that the electrical properties decrease rapidly with impulse aging and the dimensional effect of ZnO varistor ceramics is dominated not only by grain but also by grain boundary. Additionally, four defect relaxations are found at different temperatures by using dielectric spectra. Two defect relaxations appearing below -60 ℃ with activation energies about 0.24 eV and 0.35 eV are identified to be intrinsic defects originating from interstitial Zn L(Zni··) and vacancy oxygen L(VO·), which are not affected by impulse current aging. Other two relaxations appearing above 80 °C are suggested to be extrinsic defects originating from trap levels L(ingr) at intergranular phase and trap levels L(gb) at grain-boundary interfaces, respectively. Only L(gb) decreases from 0.84 eV to 0.76 eV due to impulse current aging while other trap levels keep unchanged. It is further proposed that L(gb) is responsible mainly for the electrical property and stability of ZnO ceramics.

Reference (22)

Catalog

    /

    返回文章
    返回