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Effect of annealing on crystalline property of poly-Si thin-film by Ge-induce crystallization

Kang Kun-Yong Deng Shu-Kang Shen Lan-Xian Sun Qi-Li Hao Rui-Ting Hua Qi-Lin Tang Run-Sheng Yang Pei-Zhi Li Ming

Effect of annealing on crystalline property of poly-Si thin-film by Ge-induce crystallization

Kang Kun-Yong, Deng Shu-Kang, Shen Lan-Xian, Sun Qi-Li, Hao Rui-Ting, Hua Qi-Lin, Tang Run-Sheng, Yang Pei-Zhi, Li Ming
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  • In this paper, an a-Si/Ge thin film with a buried layer of Ge and an a-Si thin film are prepared on Si substrates at a temperature of 500 ℃ by magnetron sputtering. The prepared films are annealed for 5h at different temperatures in vacuum. The annealed films are characterized by Raman scattering, X-ray diffraction, atomic force microscope and field emission scanning electron microscope. The results reveal that Ge can induce amorphous Si (a-Si) growing at a temperature of 500 ℃ by magnetron sputtering crystallize after annealing at a temperature of 600 ℃ for 5h. And in the a-Si/Ge thin film the degrees of crystallization of a-Si are 44% and 54% at the annealing temperatures of 600 ℃ and 700 ℃, respectively. By comparison, a-Si thin film without Ge is crystallized at an annealing temperature of 800 ℃ for 5h and the degree of crystallization is 46%. The crystallization temperature of a-Si/Ge is reduced by 200 ℃ compared with that of a-Si film without buried Ge layer in the film. The prepared poly-Si thin film possesses high Si(200) orientation with a grain size of 76 nm. The preparation of poly-Si film by Ge-induced crystallization might be a useful technology for developing high-quality poly-Si film.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 50902119, 61176127), and the International cooperation in science and technology project(Grant No: 2011DFA62380).
    [1]

    Izmajlowicz M A T, Flewitt A J, Milne W I 2003 J. Appl. Phys. 94 7535

    [2]

    Haque M S, Naseem H A, Brown W D 1996 J .Appl. Phys. 79 7529

    [3]

    Chen J L, Shi W M, Jin J, Yang W G, Liao Y, Xu Y Y, Wang L J, Wei G P 2011 Seventh International Conference on Thin Film Physics and Applications, Shanghai, China, September 24—27, 2010 p1

    [4]

    Kuriyama H, Kiyama S, Noguchi S, Kuwahara T, Ishida S, Nohda T, Sano K, Iwata H, Kawata H, Osumi M, Tsuda S, Nakano S, Kuwano Y 1991 Jpn. J. Appl.Phys. 30 3700

    [5]

    Zhu Z S, Lin X Y, Yu Y P, Lin K X, Qiu G M, Huang R, Yu C Y 2005 Acta Phys. Sin. 54 3805 (in Chinese) [祝祖送, 林璇英, 余云鹏, 林揆训, 邱桂明, 黄锐, 余楚迎 2005物理学报 54 3805]

    [6]

    Lv B T, Zhao H, Zheng J, Jia Z B, ZOU B T 2002 Semiconductor Technology 27 65 (in Chinese) [吕宝堂, 赵晖, 郑君, 贾兆滨, 邹邦涛 2002 半导体技术 27 65 ]

    [7]

    Park C D, Kim H Y, Cho M H, Jan K J, Lee J Y 2000 Thin Solid Films 359 268

    [8]

    Liu G, Fonash S J 1989 Appll. Phys. Lett. 55 660

    [9]

    Feng T J, Lv J X, Zhang Y X 2005 Journal of Synthetic Crystals 34 353 (in Chinese) [冯团军, 卢景霄, 张宇翔 2005 人工晶体学报 34 353]

    [10]

    Ishigame S, Ozaki K, Sameshima T, Higashi S 2001 Sol. Energy Mater. Sol. Cells 66 381

    [11]

    Pan Y Q 2007 Acta Optica Sinica 36 1097 (in Chinese) [潘永强 2007 光学学报 36 1097]

    [12]

    Qiu C W, Shi W Z, Huang Y Z 2003 Chinese Journal of Liquid Crystals and Display 18 201 (in Chinese) [邱春文, 石旺舟, 黄羽中 2003 液晶与显示 18 201]

    [13]

    Dimova-Malinovska D, Angelov O, Sendova-Vassileva M, Kamenova M, Pivin J C, Pramatarova L 2004 Vacuum 76 151

    [14]

    Li X X, Zohar Y, Wong M 2000 Sens. Actuators. 82 281

    [15]

    Subramanian V, Saraswat K C 1998 IEEE Trans. Electr. Dev. 45 1934

    [16]

    Subramanian V, Toita M, Ibrahim N R, Souri S J, Saraswat K 1999 IEEE Electron Dev. Lett. 20 341

    [17]

    Deng S K, Kang K Y, Hao R T, Shen L X,Tian J, Tu J L, Liao H, Yang P Z 2011 Journal of Optoelectronics. Laser 22 75 (in Chinese) [邓书康, 康昆勇, 郝瑞亭, 申兰先, 田晶, 涂洁磊, 廖华, 杨培志 2011 光电子·激光 22 75]

    [18]

    Wang C L, Fan D W, Liu H Z, Zhang F J, Xing D, Liu S H 2009 Spectroscopy and Spectral Analysis 29 752 (in Chinese) [王成龙, 范多旺, 刘红忠, 张福甲, 邢达, 刘颂豪 2009 光谱学与光谱分析 29 752 ]

    [19]

    Chen Y K, Lin Y X, Luo Z, Liang R S, Zhou F F 2004 Acta Phys. Sin. 53 582 (in Chinese) [陈一匡, 林揆训, 罗志, 梁锐生, 周甫方 2004 物理学报 53 582]

    [20]

    Jiang B L, Li H T, Cai M L, Miao Q L, Yang B 2010Heat Treatment of Metals 35 33 (in Chinese) [蒋百灵, 李洪涛, 蔡敏利, 苗启林, 杨波 2010 金属热处理 35 33]

    [21]

    Wang Q, Hu R, Ding J N, He Y L 2011 Chinese Journal of Vacuum Science and Technology 31 267 (in Chinese) [王权, 胡然, 丁建宁, 何宇亮 2011 真空科学与技术学报 31 267 ]

    [22]

    Huang D H, Li W, Feng L H, Zhu J M 2004 Chinese Journal of Semiconductors 25 1269 (in Chinese) [黄代绘, 李卫, 冯良桓, 朱居木 2004 半导体学报 25 1269 ]

    [23]

    Lin K X, Lin X Y, Liang H Y, Chi L F, Yu C Y 2002 Acta Phys. Sin. 51 863 (in Chinese) [林揆训, 林璇英, 梁厚蕴, 池凌飞, 余楚迎, 黄创君 2002 物理学报 51 863]

  • [1]

    Izmajlowicz M A T, Flewitt A J, Milne W I 2003 J. Appl. Phys. 94 7535

    [2]

    Haque M S, Naseem H A, Brown W D 1996 J .Appl. Phys. 79 7529

    [3]

    Chen J L, Shi W M, Jin J, Yang W G, Liao Y, Xu Y Y, Wang L J, Wei G P 2011 Seventh International Conference on Thin Film Physics and Applications, Shanghai, China, September 24—27, 2010 p1

    [4]

    Kuriyama H, Kiyama S, Noguchi S, Kuwahara T, Ishida S, Nohda T, Sano K, Iwata H, Kawata H, Osumi M, Tsuda S, Nakano S, Kuwano Y 1991 Jpn. J. Appl.Phys. 30 3700

    [5]

    Zhu Z S, Lin X Y, Yu Y P, Lin K X, Qiu G M, Huang R, Yu C Y 2005 Acta Phys. Sin. 54 3805 (in Chinese) [祝祖送, 林璇英, 余云鹏, 林揆训, 邱桂明, 黄锐, 余楚迎 2005物理学报 54 3805]

    [6]

    Lv B T, Zhao H, Zheng J, Jia Z B, ZOU B T 2002 Semiconductor Technology 27 65 (in Chinese) [吕宝堂, 赵晖, 郑君, 贾兆滨, 邹邦涛 2002 半导体技术 27 65 ]

    [7]

    Park C D, Kim H Y, Cho M H, Jan K J, Lee J Y 2000 Thin Solid Films 359 268

    [8]

    Liu G, Fonash S J 1989 Appll. Phys. Lett. 55 660

    [9]

    Feng T J, Lv J X, Zhang Y X 2005 Journal of Synthetic Crystals 34 353 (in Chinese) [冯团军, 卢景霄, 张宇翔 2005 人工晶体学报 34 353]

    [10]

    Ishigame S, Ozaki K, Sameshima T, Higashi S 2001 Sol. Energy Mater. Sol. Cells 66 381

    [11]

    Pan Y Q 2007 Acta Optica Sinica 36 1097 (in Chinese) [潘永强 2007 光学学报 36 1097]

    [12]

    Qiu C W, Shi W Z, Huang Y Z 2003 Chinese Journal of Liquid Crystals and Display 18 201 (in Chinese) [邱春文, 石旺舟, 黄羽中 2003 液晶与显示 18 201]

    [13]

    Dimova-Malinovska D, Angelov O, Sendova-Vassileva M, Kamenova M, Pivin J C, Pramatarova L 2004 Vacuum 76 151

    [14]

    Li X X, Zohar Y, Wong M 2000 Sens. Actuators. 82 281

    [15]

    Subramanian V, Saraswat K C 1998 IEEE Trans. Electr. Dev. 45 1934

    [16]

    Subramanian V, Toita M, Ibrahim N R, Souri S J, Saraswat K 1999 IEEE Electron Dev. Lett. 20 341

    [17]

    Deng S K, Kang K Y, Hao R T, Shen L X,Tian J, Tu J L, Liao H, Yang P Z 2011 Journal of Optoelectronics. Laser 22 75 (in Chinese) [邓书康, 康昆勇, 郝瑞亭, 申兰先, 田晶, 涂洁磊, 廖华, 杨培志 2011 光电子·激光 22 75]

    [18]

    Wang C L, Fan D W, Liu H Z, Zhang F J, Xing D, Liu S H 2009 Spectroscopy and Spectral Analysis 29 752 (in Chinese) [王成龙, 范多旺, 刘红忠, 张福甲, 邢达, 刘颂豪 2009 光谱学与光谱分析 29 752 ]

    [19]

    Chen Y K, Lin Y X, Luo Z, Liang R S, Zhou F F 2004 Acta Phys. Sin. 53 582 (in Chinese) [陈一匡, 林揆训, 罗志, 梁锐生, 周甫方 2004 物理学报 53 582]

    [20]

    Jiang B L, Li H T, Cai M L, Miao Q L, Yang B 2010Heat Treatment of Metals 35 33 (in Chinese) [蒋百灵, 李洪涛, 蔡敏利, 苗启林, 杨波 2010 金属热处理 35 33]

    [21]

    Wang Q, Hu R, Ding J N, He Y L 2011 Chinese Journal of Vacuum Science and Technology 31 267 (in Chinese) [王权, 胡然, 丁建宁, 何宇亮 2011 真空科学与技术学报 31 267 ]

    [22]

    Huang D H, Li W, Feng L H, Zhu J M 2004 Chinese Journal of Semiconductors 25 1269 (in Chinese) [黄代绘, 李卫, 冯良桓, 朱居木 2004 半导体学报 25 1269 ]

    [23]

    Lin K X, Lin X Y, Liang H Y, Chi L F, Yu C Y 2002 Acta Phys. Sin. 51 863 (in Chinese) [林揆训, 林璇英, 梁厚蕴, 池凌飞, 余楚迎, 黄创君 2002 物理学报 51 863]

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  • Received Date:  17 February 2012
  • Accepted Date:  05 April 2012

Effect of annealing on crystalline property of poly-Si thin-film by Ge-induce crystallization

  • 1. Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Solar Energy Research Institute, Yunnan Normal University, Kunming 650092, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos. 50902119, 61176127), and the International cooperation in science and technology project(Grant No: 2011DFA62380).

Abstract: In this paper, an a-Si/Ge thin film with a buried layer of Ge and an a-Si thin film are prepared on Si substrates at a temperature of 500 ℃ by magnetron sputtering. The prepared films are annealed for 5h at different temperatures in vacuum. The annealed films are characterized by Raman scattering, X-ray diffraction, atomic force microscope and field emission scanning electron microscope. The results reveal that Ge can induce amorphous Si (a-Si) growing at a temperature of 500 ℃ by magnetron sputtering crystallize after annealing at a temperature of 600 ℃ for 5h. And in the a-Si/Ge thin film the degrees of crystallization of a-Si are 44% and 54% at the annealing temperatures of 600 ℃ and 700 ℃, respectively. By comparison, a-Si thin film without Ge is crystallized at an annealing temperature of 800 ℃ for 5h and the degree of crystallization is 46%. The crystallization temperature of a-Si/Ge is reduced by 200 ℃ compared with that of a-Si film without buried Ge layer in the film. The prepared poly-Si thin film possesses high Si(200) orientation with a grain size of 76 nm. The preparation of poly-Si film by Ge-induced crystallization might be a useful technology for developing high-quality poly-Si film.

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