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Analyses of ionization radiation damage and dose rate effect of bipolar voltage comparator

Ma Wu-Ying Lu Wu Guo Qi He Cheng-Fa Wu Xue Wang Xin Cong Zhong-Chao Wang Bo Maria

Analyses of ionization radiation damage and dose rate effect of bipolar voltage comparator

Ma Wu-Ying, Lu Wu, Guo Qi, He Cheng-Fa, Wu Xue, Wang Xin, Cong Zhong-Chao, Wang Bo, Maria
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  • In order to investigate the dose rate effect and the radiation response of the voltage comparator, a group of bipolar voltage comparators are irradiated by 60Co at high-and low-dose rates under different bias conditions. The results show that many of the parameters for the voltage comparator subjected to ionization radiation, such as power current, input bias current, input offset voltage, and output voltage, are degraded to a certain extent; the irradiation response of the voltage comparator is severely affected by bias condition. What is more, the same type of circuits manufactured from different companies exhibit different dose rate effects; the reasons for the degradation are discussed by analyzing the experiment results. The mechanism for the formation of dose rate effect is also analyzed from the annealing characteristics. The results obtained in this paper are not only useful for the applications of the radiation hardness device, but also helpful for its design.
    [1]

    Enlow E W, Pease R L, Combs W, Schrimpf R D, Nowlin R N 1991 IEEE Trans. Nucl. Sci. 38 1342

    [2]

    Fleetwood D M, Kosier S L, Nowlin R N, Schrimpf R D, Reber R A, DeLaus M, Winokur P S, Wei A, Combs W E, Pease R L 1994 IEEE Trans. Nucl. Sci. 41 1871

    [3]

    Barnaby H J, Schrimpf R D, Pease R L, Cole P, Turflinger T, Krieg J, Titus J, Emily D, Gehlhausen M, Witczak S C, Maher M C, Van N D 1999 IEEE Trans. Nucl. Sci. 46 1666

    [4]

    Xi S B, Lu W, Ren D Y, Zhou D, Wen L, Sun J, Wu X 2011 Acta Phys. Sin. 61 236103 (in Chinese) [席善斌, 陆妩, 任迪远, 周东, 文林, 孙静, 吴雪 2012 物理学报 61 236103]

    [5]

    Zhai Y H, Li P, Zhang G J, Luo Y X, Fan X, Hu B, Li J H, Zhang J, Su P 2011 Acta Phys. Sin. 60 088501 (in Chinese) [翟亚红, 李平, 张国俊, 罗玉香, 范雪, 胡滨, 李俊宏, 张健, 束平 2011 物理学报 60 088501]

    [6]

    He B P, Yao Z B 2010 Acta Phys. Sin. 59 1985 (in Chinese) [何宝平, 姚志斌 2010 物理学报 59 1985]

    [7]

    Nowlin R N, Fleetwood D M, Schrimpf R D, Peas R L, Combs W E 1993 IEEE Trans. Nucl. Sci. 40 1686

    [8]

    Xi S B, Lu W, Re D Y, Zhou D, Wen L, sun J, Wu X 2011 Acta Phys. Sin. 61 236103 (in Chinese) [席善斌, 陆妩, 任迪远, 周东, 文林, 孙静, 吴雪 2012 物理学报 61 236103]

    [9]

    Johnston A H, Rax B G, Lee C I 1995 IEEE Trans. Nucl. Sci. 42 1650

    [10]

    Zhang H L, Lu W, Ren D Y, Guo Q, Yu X F, He C F, Erkin, Cui S 2004 Chin. J. Semicond. 25 1675 (in Chinese) [张华林, 陆妩, 任迪远, 郭旗, 余学锋, 何承发, 艾尔肯, 崔帅 2004 半导体学报 25 1675]

    [11]

    Tong S B, Hua C Y 2003 Fundamentals of Aualog Electronics (Beijing: Higher Education Press) p175 (in Chinese) [童诗白, 华成英 2003 模拟电子技术基础 (北京: 高等教育出版社) 第175页]

    [12]

    Pershenkov V S, Maslov V B, Cherepko S V, Shvetzov-Shilovsky I N, Belyakov V V, Sogoyan A V, Rusanovsky V I, Ulimov V N, Emelianov V V, Nasibullin V S 1997 IEEE Trans. Nucl. Sci. 44 1840

    [13]

    Gao B, Yu X F, Ren D Y, Li Y D, Cui J W, Li M S, Li M, Wang Y Y 2011 Acta Phys. Sin. 60 036106 (in Chinese) [高博, 余学峰, 任迪远, 李豫东, 崔江维, 李茂顺, 李明, 王义元 2011 物理学报 60 036106]

    [14]

    Wang Y Y, Lu W, Ren D Y, Guo Q, Yu X F, He C F, Gao B 2011 Acta Phys. Sin. 60 096104 (in Chinese) [王义元, 陆妩, 任迪远, 郭旗, 余学峰, 何承发, 高博 2011 物理学报 60 096104]

    [15]

    Boch J, Saigne F, Schrimpf R D, Vaille J R, Dusseau L, Lorfevre E 2006 IEEE Trans. Nucl. Sci. 53 3655

    [16]

    Pease R L, Schrimpf R D, Fleetwood D M 2009 IEEE Trans. Nucl. Sci. 56 1894

    [17]

    Rashkeev S N, Cirba C R, Fleetwood D M, Schrimpf R D, Witczak S C, Michez A, Pantelides S T 2002 IEEE Trans. Nucl. Sci. 49 2650

    [18]

    Li R M, Du L, Zhuang Y Q, Bao J L 2007 Acta Phys. Sin. 56 3400 (in Chinese) [李瑞珉, 杜磊, 庄奕琪, 包军林 2007 物理学报 56 3400]

    [19]

    Boch J, Saigne F, Schrimpf R D, Fleetwood D M, Cizmarik R, Zander D 2004 IEEE Trans. Nucl. Sci. 51 2903

    [20]

    Fleetwood D M 2013 IEEE Trans. Nucl. Sci. 60 1706

    [21]

    Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Guo Q, Yu X F, He C F 2009 Acta Phys. Sin. 58 5572 (in Chinese) [郑玉展, 陆妩, 任迪远, 王义元, 郭旗, 余学峰, 何承发 2009 物理学报 58 5572]

  • [1]

    Enlow E W, Pease R L, Combs W, Schrimpf R D, Nowlin R N 1991 IEEE Trans. Nucl. Sci. 38 1342

    [2]

    Fleetwood D M, Kosier S L, Nowlin R N, Schrimpf R D, Reber R A, DeLaus M, Winokur P S, Wei A, Combs W E, Pease R L 1994 IEEE Trans. Nucl. Sci. 41 1871

    [3]

    Barnaby H J, Schrimpf R D, Pease R L, Cole P, Turflinger T, Krieg J, Titus J, Emily D, Gehlhausen M, Witczak S C, Maher M C, Van N D 1999 IEEE Trans. Nucl. Sci. 46 1666

    [4]

    Xi S B, Lu W, Ren D Y, Zhou D, Wen L, Sun J, Wu X 2011 Acta Phys. Sin. 61 236103 (in Chinese) [席善斌, 陆妩, 任迪远, 周东, 文林, 孙静, 吴雪 2012 物理学报 61 236103]

    [5]

    Zhai Y H, Li P, Zhang G J, Luo Y X, Fan X, Hu B, Li J H, Zhang J, Su P 2011 Acta Phys. Sin. 60 088501 (in Chinese) [翟亚红, 李平, 张国俊, 罗玉香, 范雪, 胡滨, 李俊宏, 张健, 束平 2011 物理学报 60 088501]

    [6]

    He B P, Yao Z B 2010 Acta Phys. Sin. 59 1985 (in Chinese) [何宝平, 姚志斌 2010 物理学报 59 1985]

    [7]

    Nowlin R N, Fleetwood D M, Schrimpf R D, Peas R L, Combs W E 1993 IEEE Trans. Nucl. Sci. 40 1686

    [8]

    Xi S B, Lu W, Re D Y, Zhou D, Wen L, sun J, Wu X 2011 Acta Phys. Sin. 61 236103 (in Chinese) [席善斌, 陆妩, 任迪远, 周东, 文林, 孙静, 吴雪 2012 物理学报 61 236103]

    [9]

    Johnston A H, Rax B G, Lee C I 1995 IEEE Trans. Nucl. Sci. 42 1650

    [10]

    Zhang H L, Lu W, Ren D Y, Guo Q, Yu X F, He C F, Erkin, Cui S 2004 Chin. J. Semicond. 25 1675 (in Chinese) [张华林, 陆妩, 任迪远, 郭旗, 余学锋, 何承发, 艾尔肯, 崔帅 2004 半导体学报 25 1675]

    [11]

    Tong S B, Hua C Y 2003 Fundamentals of Aualog Electronics (Beijing: Higher Education Press) p175 (in Chinese) [童诗白, 华成英 2003 模拟电子技术基础 (北京: 高等教育出版社) 第175页]

    [12]

    Pershenkov V S, Maslov V B, Cherepko S V, Shvetzov-Shilovsky I N, Belyakov V V, Sogoyan A V, Rusanovsky V I, Ulimov V N, Emelianov V V, Nasibullin V S 1997 IEEE Trans. Nucl. Sci. 44 1840

    [13]

    Gao B, Yu X F, Ren D Y, Li Y D, Cui J W, Li M S, Li M, Wang Y Y 2011 Acta Phys. Sin. 60 036106 (in Chinese) [高博, 余学峰, 任迪远, 李豫东, 崔江维, 李茂顺, 李明, 王义元 2011 物理学报 60 036106]

    [14]

    Wang Y Y, Lu W, Ren D Y, Guo Q, Yu X F, He C F, Gao B 2011 Acta Phys. Sin. 60 096104 (in Chinese) [王义元, 陆妩, 任迪远, 郭旗, 余学峰, 何承发, 高博 2011 物理学报 60 096104]

    [15]

    Boch J, Saigne F, Schrimpf R D, Vaille J R, Dusseau L, Lorfevre E 2006 IEEE Trans. Nucl. Sci. 53 3655

    [16]

    Pease R L, Schrimpf R D, Fleetwood D M 2009 IEEE Trans. Nucl. Sci. 56 1894

    [17]

    Rashkeev S N, Cirba C R, Fleetwood D M, Schrimpf R D, Witczak S C, Michez A, Pantelides S T 2002 IEEE Trans. Nucl. Sci. 49 2650

    [18]

    Li R M, Du L, Zhuang Y Q, Bao J L 2007 Acta Phys. Sin. 56 3400 (in Chinese) [李瑞珉, 杜磊, 庄奕琪, 包军林 2007 物理学报 56 3400]

    [19]

    Boch J, Saigne F, Schrimpf R D, Fleetwood D M, Cizmarik R, Zander D 2004 IEEE Trans. Nucl. Sci. 51 2903

    [20]

    Fleetwood D M 2013 IEEE Trans. Nucl. Sci. 60 1706

    [21]

    Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Guo Q, Yu X F, He C F 2009 Acta Phys. Sin. 58 5572 (in Chinese) [郑玉展, 陆妩, 任迪远, 王义元, 郭旗, 余学峰, 何承发 2009 物理学报 58 5572]

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  • Received Date:  13 August 2013
  • Accepted Date:  25 September 2013
  • Published Online:  20 January 2014

Analyses of ionization radiation damage and dose rate effect of bipolar voltage comparator

  • 1. Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry of CAS, Urumqi 830011, China;
  • 2. University of Chinese Academy of Sciences, Beijing 100049, China

Abstract: In order to investigate the dose rate effect and the radiation response of the voltage comparator, a group of bipolar voltage comparators are irradiated by 60Co at high-and low-dose rates under different bias conditions. The results show that many of the parameters for the voltage comparator subjected to ionization radiation, such as power current, input bias current, input offset voltage, and output voltage, are degraded to a certain extent; the irradiation response of the voltage comparator is severely affected by bias condition. What is more, the same type of circuits manufactured from different companies exhibit different dose rate effects; the reasons for the degradation are discussed by analyzing the experiment results. The mechanism for the formation of dose rate effect is also analyzed from the annealing characteristics. The results obtained in this paper are not only useful for the applications of the radiation hardness device, but also helpful for its design.

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