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Influences of the substrate position on the morphology and characterization of phosphorus doped ZnO nanomaterial

Feng Qiu-Ju Xu Rui-Zhuo Guo Hui-Ying Xu Kun Li Rong Tao Peng-Cheng Liang Hong-Wei Liu Jia-Yuan Mei Yi-Ying

Influences of the substrate position on the morphology and characterization of phosphorus doped ZnO nanomaterial

Feng Qiu-Ju, Xu Rui-Zhuo, Guo Hui-Ying, Xu Kun, Li Rong, Tao Peng-Cheng, Liang Hong-Wei, Liu Jia-Yuan, Mei Yi-Ying
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  • Received Date:  15 January 2014
  • Accepted Date:  18 April 2014
  • Published Online:  05 August 2014

Influences of the substrate position on the morphology and characterization of phosphorus doped ZnO nanomaterial

  • 1. School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029, China;
  • 2. Preparatory Department, School of Science, Dalian Nationalities University, Dalian 116600, China;
  • 3. School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos. 10804040, 11004020), the Doctoral Scientific Research Starting Foundation of Liaoning Province, China (Grant No. 20101061), the Natureal Science Foundation of Dalian, China (Grant No. 2010J21DW020), and the Open Foundation of Key Laboratory of Space Laser Communication and Testing Technology of Chinese Academy of Sciences, China (Grant No. KJJG10-1).

Abstract: One-dimensional phosphorus doped ZnO nanowires and nanonails are prepared on Si substrate without employing any metal catalyst by chemical vapor deposition method. Field-emission scanning electron microscopy shows that the samples located downstream 1.5 cm away from the source material are of nanowire structure and located 1 cm above source materials of nanonail structure, and the growth mechanisms of phosphorus doped ZnO nanostructures with different morphologies are discussed. The photoluminescence properties of phosphorus doped ZnO nanowires and nanonails are studied at a temperature of 10 K. The phosphorus related acceptor emissions are observed. Furthermore, the current-voltage (I-V) measurement based on the ZnO nanostructures/Si heterojunctions shows a typical semiconductor rectification characteristic with positive open electric fields being 4.8 and 3.2 V, respectively.

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