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非聚焦电子束照射SiO2薄膜带电效应

李维勤 张海波 鲁君

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非聚焦电子束照射SiO2薄膜带电效应

李维勤, 张海波, 鲁君

Charging effects of SiO2 thin films under defocused electron beam irradiation

Li Wei-Qin, Zhang Hai-Bo, Lu Jun
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  • 采用考虑电子散射、俘获、输运和自洽场的三维数值模型, 模拟了低能非聚焦电子束照射接地SiO2薄膜的带电效应. 结果表明, 由于电子的迁移和扩散, 电子会渡越散射区域产生负空间电荷分布. 空间电荷呈现在散射区域内为正, 区域外为负的交替分布特性. 对于薄膜负带电, 电子会输运至导电衬底形成泄漏电流, 其暂态过程随泄漏电流的增加趋于平衡. 而正带电暂态过程随返回二次电子的增多而趋于平衡. 在平衡态时, 负带电表面电位随薄膜厚度、陷阱密度的增大而降低, 随电子迁移率、薄膜介电常数的增大而升高;而正带电表面电位受它们影响较小.
    Based on a three-dimensional self-consistent numerical model with consideration of electron scattering, trapping and transport, the charging effects due to low-energy defocused electron beam irradiation are simulated for a SiO2 thin film with a grounded conductive substrate. The results show that because of electron drift and diffusion, electrons can transit the electron scattering region, forming negative space charges. The space charge is, therefore, positive and negative within and outside the scattering region, respectively. Some electrons can flow to the conductive substrate, forming the leakage current, and the transient negative charging process tends to equilibrium as the leakage current increases. In comparison, the transient positive charging process approaches equilibrium with the number of returned electrons increasing due to the positive surface potential. In the equilibrium state, the surface potential of the film negatively charged decreases with film thickness and trap density increasing; it increases with electron mobility and dielectric constant. However, the equilibrium surface potential of the film positively charged varies slightly with film parameter.
    • 基金项目: 国家自然科学基金(批准号: 60476018), 陕西省教育厅科研计划项目(批准号: 11JK0926)和西安理工大学博士科研启动基金(批准号: 105-211005)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 60476018), the Scientific Research Program Funded by Shaanxi Provincial Education Department (Program No. 11JK0926), and the Doctor Research Start Fund of Xian University of Technology (Grant No. 105-211005).
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    [2]
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    Reimer L 1993 Image Formation in Low Voltage Scanning Electron Microscopy (Bellingham: SPIE Optical Engineering Press) p71

    [4]
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    [6]
    [7]

    Zhao S L, Bertrand P 2011 Chin. Phys. B 20 037901

    [8]

    Joo J, Chow B Y, Jacobson J M 2006 Nano Lett 6 2021

    [9]
    [10]

    Sun X, You S F, Xiao P, Ding Z J 2006 Acta Phys. Sin. 55 148 (in Chinese) [孙霞, 尤四方, 肖沛, 丁泽军 2006 物理学报 55 148]

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    [12]

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    [16]

    Paulmier T, Dirassen B, Payan D, Eesbeek M V 2009 IEEE Trans. Dielectr. Electr. Insul. 16 682

    [17]
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    Quan R H, Zhang Z L, Han J W, Huang J G, Yan X J 2009 Acta Phys. Sin. 58 1205 (in Chinese) [全荣辉, 张振龙, 韩建伟, 黄建国, 闫小娟 2009 物理学报 58 1205]

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    [22]

    Qin X G, He D Y, Wang J 2009 Acta Phys. Sin. 58 684 (in Chinese) [秦晓刚, 贺德衍, 王骥 2009 物理学报 58 684]

    [23]
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    Sessler G M 1998 Electrets (New York: Springer-Verlag)

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    Cazaux J 2010 J. Electron Spectrosc. Relat. Phenom. 176 58

    [30]

    Ura K 1998 J. Electron Microsc. 47 143

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    [32]

    Nakasugi T, Ando A, Sugihara K, Miyoshi M, Okumura K 2001 Proc. SPIE 4343 334

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    Koike T, Ikeda T, Miyoshi M, Okumura K, Ura K 2002 Jpn. J. Appl. Phys. 41 915

    [36]
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    Zhang H B, Feng R J, Ura K 2004 Sci. Prog. 87 249

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    [43]
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    [50]
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    Bai M, Pease R F W 2004 J. Vac. Sci. Technol. B 22 2907

    [52]
    [53]

    Taylor D M, Mehdi Q H 1979 J. Phys. D 12 2253

    [54]
    [55]

    Li W Q, Zhang H B 2008 Acta Phys. Sin. 57 3219 (in Chinese) [李维勤, 张海波 2008 物理学报 57 3219]

    [56]

    Li W Q, Zhang H B 2010 Appl. Surf. Sci. 256 3482

    [57]
    [58]
    [59]

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    [60]

    Li W Q, Mu K, Xia R H 2011 Micron 42 443

    [61]
    [62]

    Czyzewski Z, MacCallum D O, Romig A, Joy D C 1990 J. Appl. Phys. 68 306

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    Shimizu R, Ding Z J 1992 Rep. Prog. Phys. 55 487

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    [68]

    Ying M H, Thong J T L 1994 Meas. Sci. Technol. 5 1089

    [69]
    [70]

    Cazaux J 2004 J. Appl. Phys. 95 731

    [71]
    [72]

    Zhang H B, Feng R J, Ura K 2003 Chin. Phys. Lett. 20 2011

    [73]
    [74]

    Touzin M, Goeuriot D, Guerret-Picourt C, Juv D, Trheux D, Fitting H J 2006 J. Appl. Phys. 99 114110

    [75]
    [76]
    [77]

    Renoud R, Mady F, Attard C, Bigarr J, Ganachaud J P 2004 Phys. Status Solidi A 201 2119

    [78]

    Ning T H 1976 J. Appl. Phys. 47 3203

    [79]
    [80]
    [81]

    Cazaux J 1996 X-Ray Spectrom. 25 265

    [82]

    Renoud R, Attard C, Ganachaud J-P, Bartholome S, Dubus A 1998 J. Phys.: Condens. Matter 10 5821.

    [83]
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    [85]

    Bai M Pease R F W Meisburger W D 2003 J. Vac. Sci. Technol. B 21 106

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出版历程
  • 收稿日期:  2011-03-25
  • 修回日期:  2011-05-12
  • 刊出日期:  2012-01-05

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