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采用低温分子束外延法(LT-MBE)制备出Ga0.946Mn0.054As稀磁半导体(DMS)薄膜.通过X射线吸收谱(XAS)研究影响Ga0.946Mn0.054As薄膜性质的主要缺陷Mn间隙原子(MnI)和As反位原子(AsGa).实验结果表明,在较低生长温度(TS=200℃)下Ga0.946Mn0.054
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关键词:
- Ga0.946Mn0.054As稀磁半导体 /
- X射线吸收谱 /
- As反位缺陷 /
- Mn间隙原子
The influence of the major compensating defects As antisites (AsGa) and Mn interstitials (MnI) in the Ga0.946Mn0.054As diluted magnetic semiconductor (DMS) were studied by X-ray absorption spectra (XAS). The experimental results show that the defects in Ga0.946Mn0.054As grown at lower temperature (TS=200℃) is mainly AsGa, but at TS>230℃ MnI is the major defects. On the other hand, a higher LT-annealing temperature (250℃) can remove MnI out of the Ga0.946Mn0.054As lattice, and the highest Curie temperature (TC=130 K) is reached. Moreover, it is indicated that the LT-annealing process can increase the number of MnGa atoms by reducing the concentration of AsGa defects and driving MnI defects to fill up the holes left by AsGa.-
Keywords:
- Ga0.946Mn0.054As diluted magnetic semiconductor /
- X-ray absorption spectra /
- As antisites /
- Mn interstitials
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[12] Zhong Y J, Cheng S C, Su P,Gong M,Shi R Y, Cao X C, Shi T F 2009 The Journal of Light Scattering 21 3 (in Chinese) [钟玉杰、程顺昌、苏 平、龚 敏、石瑞英、曹先存、史同飞 2009 光散射学报 21 3]
[13] He H C, Yang L, Ge W K, Wang J N, Dai X, Wang Y Q 2005 Appl. Phys. Lett. 87 162506
[14] Sadowski J, Domagala J Z 2004 Phys.Rev. B 69 075206-1
[15] Ankundinov A L, Ravel B, Rehr J J, Conradson S D 1998 Phys.Rev. B 58 7565
[16] Yonamoto Y, Yokoyama T, Amemiya K, Matsumura D, Ohta T 2001 Phys.Rev. B 63 214406-1
[17] Yu K M, Walukiewicz W, Wojtowicz T, Denlinger J 2005 Appl. Phys. Lett. 86 042102
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[1] Ohno H, Shen A, Matsukura F, Oiwa A,Endo A,Kataumoto S, Iye Y 1996 Appl. Phys. Lett. 69 363
[2] Dietl T 2008 J. Appl. Phys. 103 07D111-1
[3] Ohno H 1998 Science 281 951
[4] Valenzuela S O, Tinkham M, Tinkham M 2007 J. Appl. Phys. 101 09B103-1
[5] Van’t Erve O M J, Hanbicki A T, Holub M, Li C H, Awo-Affouda C, Thompson P E, Jonker B T 2007 Appl. Phys. Lett. 91 212109-1
[6] Nazmul Ahsan M, Sugahara S, Tanaka M 2003 Phys.Rev. B 67 241308-1
[7] Ji C J, Cao X C, Han Q F, Qiu K, Zhong F, Li X H 2007 Appl. Phys. Lett. 90 232501
[8] Ji C J, He H T, Cao X C, Qiu K, Zhong F, Li X H, Han Q F, Xu F Q, Wang J N, Wang Y Q 2007 Europhys. Lett. 78 57006
[9] Luo X D, Ji C J, Wang Y Q, Wang J N 2008 Acta Phys. Sin. 57 5277 (in Chinese) [罗向东、姬长健、王玉琦、王建农 2008 物理学报 57 5277]
[10] Liu X D, Wang W Z, Gao R X, Zhao J H, Wen J H, Lin W Z, Lai T S 2008 Acta Phys. Sin. 57 3857(in Chinese)[刘晓东、王玮竹、高瑞鑫、赵建华、文锦辉、 林位株、赖天树 2008 物理学报 57 3857]
[11] Liu G B, Liu B G 2009 Chin. Phys. B 18 5047
[12] Zhong Y J, Cheng S C, Su P,Gong M,Shi R Y, Cao X C, Shi T F 2009 The Journal of Light Scattering 21 3 (in Chinese) [钟玉杰、程顺昌、苏 平、龚 敏、石瑞英、曹先存、史同飞 2009 光散射学报 21 3]
[13] He H C, Yang L, Ge W K, Wang J N, Dai X, Wang Y Q 2005 Appl. Phys. Lett. 87 162506
[14] Sadowski J, Domagala J Z 2004 Phys.Rev. B 69 075206-1
[15] Ankundinov A L, Ravel B, Rehr J J, Conradson S D 1998 Phys.Rev. B 58 7565
[16] Yonamoto Y, Yokoyama T, Amemiya K, Matsumura D, Ohta T 2001 Phys.Rev. B 63 214406-1
[17] Yu K M, Walukiewicz W, Wojtowicz T, Denlinger J 2005 Appl. Phys. Lett. 86 042102
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