ZnO薄膜/金刚石在不同激励条件下声表面波特性的计算与分析

钱莉荣; 杨保和

doi:10.7498/aps.62.117701

摘要

本文首先以刚度矩阵法为基础, 给出了ZnO薄膜/金刚石在四种不同激励条件下的有效介电常数计算公式. 然后以此为工具, 分别计算了多晶ZnO(002) 薄膜/多晶金刚石和单晶ZnO(002) 薄膜/多晶金刚石的声表面波特性, 并根据计算结果及设计制作声表面波器件的要求, 对ZnO膜厚的选择进行了详细地分析. 最后讨论了ZnO/金刚石/Si复合晶片可以忽略Si衬底对声表面特性影响时对金刚石膜厚的要求.

关键词:

Abstract

In the last twenty years, the ZnO/diamond layered structure for surface acoustic wave (SAW) devices have been widely studied and have attracted great attention, due to its advantages of high acoustic velocity, high electromechanical coupling coefficient and high power durability. Distinguished from the conventional single-crystal substrate (such as quartz, lithium niobate), ZnO/diamond layered structure shows dispersive SAW properties, which can be excited by four ways: interdigital transducer (IDT)/ZnO/diamond, IDT/ZnO/shorting metal/diamond, ZnO/IDT/diamond, and shorting metal/ ZnO/IDT/diamond. In this paper, the formulation based on the stiffness matrix method for calculating the effective permittivity of ZnO/diamond layered structure under four excitation conditions is given first. Then, by using this formulation, the SAW properties of the monocrystalline ZnO (002) film on polycrystalline diamond and the polycrystalline ZnO (002) film on polycrystalline diamond are calculated respectively. Based on the results of calculation, the ZnO film thicknesses qualified to design and fabricate SAW device are analyzed in detail. Finally, we discuss the function of diamond film thickness of ZnO/diamond/Si layered structure so as to avoid the influence of the silicon substrate on the SAW properties.

Keywords:

作者及机构信息

钱莉荣¹,
杨保和^1,2

1.
天津大学精密仪器与光电子工程学院, 天津 300072;

2.
天津理工大学电子信息工程学院,天津市薄膜电子与通信器件重点实验室, 天津 300384

基金项目: 国家高技术研究发展计划 (批准号: 2013AA030801)、国家自然科学基金(批准号: 50972105)、天津市科技支撑计划重点项目 (批准号: 10ZCKFGX01200)和天津市科技计划重点项目 (批准号: 10SYSYJC27700) 资助的课题.

Authors and contacts

Qian Li-Rong¹,
Yang Bao-He^1,2

1.
School of Precision Instrument and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China;

2.
School of Electronic Information Engineering, Tianjin University of Technology, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin 300384, China

Funds: Project supported by the National High Technology Research and Development Program of China (Grant No. 2013AA030801), the National Natural Science Foundation of China (Grant No. 50972105), the Key Technology Research and Development Program of Tianjin, China (Grant No. 10ZCKFGX01200), and the Tianjin Key Program for Development of Science and Technology, China (Grant No. 10SYSYJC27700).

参考文献

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[2]	Higaki K, Nakahata H, Kitabayashi H, Fujii S, Tanabe K, Seki Y, Shikata S 1997 IEEE Trans. Ultrason. Ferroelect. Freq. Contr. 44 1395
[3]	Fujii S, Seki Y, Yoshida K, Nakahata H, Higaki K, Kitabayashi H, Shikata S 1997 Proc. IEEE Ultrason. Symp. 1 183
[4]	Guang Y, Santos P V 2007 Acta Phys. Sin. 56 3515 (in Chinese) [杨光, Santos P V 2007 物理学报 56 3515]
[5]	Pedrós J, Garcia-Gancedo L, Ford C, Barnes C, Griffiths J, Jones G, Flewitt A 2011 J. Appl. Phys. 110 103501
[6]	Fu Y, Garcia-Gancedo L, Pang H, Porro S, Gu Y, Luo J, Zu X, Placido F, Wilson J, Flewitt A 2012 Biomicrofluidics 6 024105
[7]	Pan F, Luo J T, Yang Y C, Wang X B, Zeng F 2012 Sci. China Tech. Sci. 55 421
[8]	Luo J, Zeng F, Pan F, Li H, Niu J, Jia R, Liu M 2010 Appl. Surf. Sci. 256 3081
[9]	Luo J, Fan P, Pan F, Zeng F, Zhang D, Zheng Z, Liang G, Cai X 2012 Phys. Status Solidi RRL 6 381
[10]	Luo J, Pan F, Fan P, Zeng F, Zhang D, Zheng Z, Liang G 2012 Appl. Phys. Lett. 101 172909
[11]	Hachigo A, Malocha D C 1998 IEEE Trans. Ultrason., Ferroelect. Freq. Contr. 45 660
[12]	Wu T T, Chen Y Y 2002 IEEE Trans. Ultrason., Ferroelect. Freq. Contr. 49 142
[13]	Wu T T, Chen Y Y, Chou T T 2002 Proc. IEEE Ultrason. Symp. 1 271
[14]	Nakahata H, Hachigo A, Higaki K, Fujii S, Shikata S, Fujimori N 1995 IEEE Trans. Ultrason. Ferroelect. Freq. Contr. 42 362
[15]	Adler E L, Solie L 1995 Proc. IEEE Ultrason. Symp. 1 341
[16]	Campbell J J, Jones W R 1968 IEEE Sonics and Ultrason. 15 209
[17]	Adler E L 1990 IEEE Trans. Ultrason., Ferroelect. Freq. Contr. 37 485
[18]	Levent Degertekin F, Honein B, Khuri-Yakub B 1996 Proc. IEEE Ultrason. Symp. 1 559
[19]	Pastureaud T, Laude V, Ballandras S 2002 Appl. Phys. Lett. 80 2544
[20]	Tan E L 2002 IEEE Trans. Ultrason., Ferroelect. Freq. Contr. 49 929
[21]	Wang L, Rokhlin S L 2004 IEEE Trans. Ultrason., Ferroelect. Freq. Contr. 51 453
[22]	Zhang V Y, Lefebvre J E, Bruneel C, Gryba T 2001 IEEE Trans. Ultrason. Ferroelect. Freq. Contr. 48 1449
[23]	Milsom R F, Reilly N H C, Redwood M 1977 IEEE Sonics and Ultrason. 24 147
[24]	Donghai Q, Wen L, Smith P M 1999 IEEE Trans. Ultrason., Ferroelect. Freq. Contr. 46 1242
[25]	Smith P M 2001 IEEE Trans. Ultrason., Ferroelect. Freq. Contr. 48 171
[26]	Peach R C 2006 IEEE Ultrason. Symp. Vancouver, BC, Oct. 2-6, 2006 p371
[27]	Chen Y Y, Hsu J C, Wu T T 2004 J. Chin. Inst. Eng. 27 823
[28]	Hashimoto K 2000 Surface acoustic wave devices in telecommunications: modelling and simulation (Berlin: Springer) p165
[29]	Benetti M, Cannata D, Di Pictrantonio F, Verona E 2005 IEEE Trans. Ultrason. Ferroelect. Freq. Contr. 52 1806
[30]	Carlotti G, Socino G, Petri A, Verona E 1987 IEEE Ultrason. Symp. Denver, Colorado, USA, Oct. 14-16, 1987 p295
[31]	Jaffe H, Berlincourt D A 1965 Proc. IEEE 53 1372
[32]	Hachigo A, Nakahata H, Itakura K, Fujii S, Shikata S 1999 Proc. IEEE Ultrason. Symp. 1 325
[33]	Nakahata H, Hachigo A, Itakura K, Shikata S 2000 IEEE Ultrason. Symp. 1 349
[34]	Morgan D 2007 Surface acoustic wave filters (2nd Edn.) (Oxford: Elsevier) p343
[35]	Shikata S, Nakahata H, Higaki K, Hachigo A, Fujimori N, Yamamoto Y, Sakairi N, Takahashi Y 1993 Proc. IEEE Ultrason. Symp. 1 277

施引文献

[1]	Nakahata H, Higaki K, Fujii S, Hachigo A, Kitabayashi H, Tanabe K, Seki Y, Shikata S 1995 Proc. IEEE Ultrason. Symp. 1 361
[2]	Higaki K, Nakahata H, Kitabayashi H, Fujii S, Tanabe K, Seki Y, Shikata S 1997 IEEE Trans. Ultrason. Ferroelect. Freq. Contr. 44 1395
[3]	Fujii S, Seki Y, Yoshida K, Nakahata H, Higaki K, Kitabayashi H, Shikata S 1997 Proc. IEEE Ultrason. Symp. 1 183
[4]	Guang Y, Santos P V 2007 Acta Phys. Sin. 56 3515 (in Chinese) [杨光, Santos P V 2007 物理学报 56 3515]
[5]	Pedrós J, Garcia-Gancedo L, Ford C, Barnes C, Griffiths J, Jones G, Flewitt A 2011 J. Appl. Phys. 110 103501
[6]	Fu Y, Garcia-Gancedo L, Pang H, Porro S, Gu Y, Luo J, Zu X, Placido F, Wilson J, Flewitt A 2012 Biomicrofluidics 6 024105
[7]	Pan F, Luo J T, Yang Y C, Wang X B, Zeng F 2012 Sci. China Tech. Sci. 55 421
[8]	Luo J, Zeng F, Pan F, Li H, Niu J, Jia R, Liu M 2010 Appl. Surf. Sci. 256 3081
[9]	Luo J, Fan P, Pan F, Zeng F, Zhang D, Zheng Z, Liang G, Cai X 2012 Phys. Status Solidi RRL 6 381
[10]	Luo J, Pan F, Fan P, Zeng F, Zhang D, Zheng Z, Liang G 2012 Appl. Phys. Lett. 101 172909
[11]	Hachigo A, Malocha D C 1998 IEEE Trans. Ultrason., Ferroelect. Freq. Contr. 45 660
[12]	Wu T T, Chen Y Y 2002 IEEE Trans. Ultrason., Ferroelect. Freq. Contr. 49 142
[13]	Wu T T, Chen Y Y, Chou T T 2002 Proc. IEEE Ultrason. Symp. 1 271
[14]	Nakahata H, Hachigo A, Higaki K, Fujii S, Shikata S, Fujimori N 1995 IEEE Trans. Ultrason. Ferroelect. Freq. Contr. 42 362
[15]	Adler E L, Solie L 1995 Proc. IEEE Ultrason. Symp. 1 341
[16]	Campbell J J, Jones W R 1968 IEEE Sonics and Ultrason. 15 209
[17]	Adler E L 1990 IEEE Trans. Ultrason., Ferroelect. Freq. Contr. 37 485
[18]	Levent Degertekin F, Honein B, Khuri-Yakub B 1996 Proc. IEEE Ultrason. Symp. 1 559
[19]	Pastureaud T, Laude V, Ballandras S 2002 Appl. Phys. Lett. 80 2544
[20]	Tan E L 2002 IEEE Trans. Ultrason., Ferroelect. Freq. Contr. 49 929
[21]	Wang L, Rokhlin S L 2004 IEEE Trans. Ultrason., Ferroelect. Freq. Contr. 51 453
[22]	Zhang V Y, Lefebvre J E, Bruneel C, Gryba T 2001 IEEE Trans. Ultrason. Ferroelect. Freq. Contr. 48 1449
[23]	Milsom R F, Reilly N H C, Redwood M 1977 IEEE Sonics and Ultrason. 24 147
[24]	Donghai Q, Wen L, Smith P M 1999 IEEE Trans. Ultrason., Ferroelect. Freq. Contr. 46 1242
[25]	Smith P M 2001 IEEE Trans. Ultrason., Ferroelect. Freq. Contr. 48 171
[26]	Peach R C 2006 IEEE Ultrason. Symp. Vancouver, BC, Oct. 2-6, 2006 p371
[27]	Chen Y Y, Hsu J C, Wu T T 2004 J. Chin. Inst. Eng. 27 823
[28]	Hashimoto K 2000 Surface acoustic wave devices in telecommunications: modelling and simulation (Berlin: Springer) p165
[29]	Benetti M, Cannata D, Di Pictrantonio F, Verona E 2005 IEEE Trans. Ultrason. Ferroelect. Freq. Contr. 52 1806
[30]	Carlotti G, Socino G, Petri A, Verona E 1987 IEEE Ultrason. Symp. Denver, Colorado, USA, Oct. 14-16, 1987 p295
[31]	Jaffe H, Berlincourt D A 1965 Proc. IEEE 53 1372
[32]	Hachigo A, Nakahata H, Itakura K, Fujii S, Shikata S 1999 Proc. IEEE Ultrason. Symp. 1 325
[33]	Nakahata H, Hachigo A, Itakura K, Shikata S 2000 IEEE Ultrason. Symp. 1 349
[34]	Morgan D 2007 Surface acoustic wave filters (2nd Edn.) (Oxford: Elsevier) p343
[35]	Shikata S, Nakahata H, Higaki K, Hachigo A, Fujimori N, Yamamoto Y, Sakairi N, Takahashi Y 1993 Proc. IEEE Ultrason. Symp. 1 277

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