搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

多孔氧化铝薄膜的光致发光起源: 三种缺陷中心

李国栋 王倩 邓保霞 张雅晶

引用本文:
Citation:

多孔氧化铝薄膜的光致发光起源: 三种缺陷中心

李国栋, 王倩, 邓保霞, 张雅晶

Origin of nanopore alumina film photoluminescence: three kinds of defect centers

Li Guo-Dong, Wang Qian, Deng Bao-Xia, Zhang Ya-Jing
PDF
导出引用
  • 在草酸溶液中用二次阳极氧化法制备了纳米多孔氧化铝薄膜, 分析了制备过程中氧化铝薄膜中缺陷的形成机理. 场发射电子显微镜给出了薄膜的表面形貌和结构. X 射线色散能谱和傅里叶红外透射光谱测试表明, 进入薄膜中的草酸杂质加热到500 ℃未全部分解. 对多孔氧化铝薄膜的光致发光PL光谱做了高斯拟合, 结合测试结果和薄膜中的缺陷分析指出: 多孔氧化铝薄膜的发光由F+, F和草酸杂质相关缺陷引起, 对应发光中心分别在402, 433, 475 nm处, 并提出F中心起主导作用. 对不同草酸浓度中制备的多孔氧化铝薄膜的PL光谱讨论指出: 随草酸浓度增加, 三种发光中心的峰位不会发生变化, 但相对强度发生改变, F+中心和F中心减少, 草酸杂质相关发光中心增加, PL 峰红移. 最后提出通过控制草酸浓度来控制多孔氧化铝薄膜中的草酸杂质. 此研究将对多孔氧化铝薄膜发光起源和机理有更深入的理解, 同时也为多孔氧化铝薄膜的制备提供一种全新的思路.
    Nanopore alumina films (PAF) are fabricated by two-step anodic oxidation of aluminum in oxalic acid. The field emission scanning electron microscope measurement reveals the surface microstructure of PAF, and the defect formation mechanism in PAF is analyzed. The energy dispersive X ray spectroscopy and the Fourier transform infrared spectroscopy results indicate that oxalic ions are incorporated into the PAF in the synthesis process and further heating up to 500 ℃ does not cause oxalic ions to completely decompose. The photoluminescence (PL) spectra of PAF can be divided into three bands by Gaussion fitting method. The measurement results and the defects in PAF show that the PL originate from optical transitions of two kinds of different oxygen-deficient defect centers (F and F+) and oxalic impurities related defect center, PL centered at 402, 433 and 475 nm, respectively. We put forward for the first time that F centers play a leading role. The PL characteristics of the PAF prepared in oxalic acids with different concentrations suggest that three kinds of the luminescent center positions do not change with the increase of the oxalic acid concentration, but their relative intensities change with the increase of the oxalic acid concentration, i.e., F and F+ decrease, oxalic impurities related defects increase, and these will cause the PL peak position to be red-shifted. Finally, we put forward that the oxalic impurities in PAF can be changed by controlling the concentration of oxalic acid. The present experiments and results will be beneficial to the understanding of light-emitting mechanism in PAF, meanwhile, in this paper we propose a new train of thought for PAF preparation application.
    • 基金项目: 国家自然科学基金(批准号: 11065009)和新疆研究生科研创新项目(批准号: XJGRI2014014)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11065009) and the Xinjiang Graduate Research Innovation Project, China (Grant No. XJGRI2014014).
    [1]

    Keller F, Hunter M S, Robinson D L 1953 J. Electrochem. Soc. 100 411

    [2]

    Masuda H, Fukuda K 1995 Science 268 1466

    [3]

    Zhou W Y, Li Y B, Liu Z Q, Tang D S, Zou X P, Wang G 2001 Chin. Phys. B 10 0218

    [4]

    Cao H Q, Xu Y, Hong J M, Liu H B, Yin G, Li B L, Tie C Y, Xu Z 2001 Adv. Mater. 13 1393

    [5]

    Zhang J J, Li Z Y, Zhang H M, Hou X, Sun H Y 2013 Chin. Phys. B 22 087805

    [6]

    Pen D J, Mbindyo J K N, Carado A J, Mallouk T E, Keating C D, Razavi B, Mayer T S 2002 J. Phys. Chem. B 106 7458

    [7]

    Zhu X F, Han H, Song Y, Ma H T, Qi W X, Lu C, Xu C 2012 Acta Phys. Sin. 61 228202 (in Chinese) [朱绪飞, 韩华, 宋晔, 马宏图, 戚卫星, 路超, 徐辰 2012 物理学报 61 228202]

    [8]

    Li A P, Muller F, Briner A, Nielsch K, Gosele U 1999 Adv. Mater. 11 483

    [9]

    Nahar R K, Khanna V K 1998 Sens. Actuaors B 46 35

    [10]

    Kukhta A V, Gorokh G G, Kolesnik E E, Mitkovets A I, Taoubi M I, Koshin Y A 2002 Surf. Sci. 507-510 593

    [11]

    Azevedo W M, Oliveira G B, Silva Jr E F, Khoury H J, Oliveira de Jesus E F 2006 Radiat. Prot. Dosim. 119 201

    [12]

    Zhang B, Zhang H J, Yang Q H, Lu S Z 2010 Acta Phys. Sin. 59 1333 (in Chinese) [张斌, 张浩佳, 杨秋红, 陆神洲 2010 物理学报 59 1333]

    [13]

    Ghrib M, Ouertania R, Gaidia M 2012 Appl. Surf. Sci. 258 4995

    [14]

    Qin F F, Zhang H M, Wang C X, Guo C, Zhang J J 2014 Acta Phys. Sin. 63 198802 (in Chinese) [秦飞飞, 张海明, 王彩霞, 郭聪, 张晶晶 2014 物理学报 63 198802]

    [15]

    Xu W L, Zheng M J, Wu S, Shen W Z 2004 Appl. Phys. Lett. 85 4364

    [16]

    Liu J, Liu S, Zhou H H, Xie C J, Huang Z Y, Fu C P, Kuang Y F 2014 Thin Solid Films 552 75

    [17]

    Du Y, Cai W L, Mo C M, Chen J, Zhang L D, Zhu X G 1999 Appl. Phys. Lett. 74 2951

    [18]

    Sun X Y, Xu F Q, Li Z M, Zhang W H 2006 J. Lumin. 121 588

    [19]

    Huang G S, Wu X L, Mei Y F, Shao X F, Siu G G 2003 J. Appl. Phys. 93 582

    [20]

    Li Z J, Huang K L 2007 J. Lumin. 127 435

    [21]

    Khan G G, Singh A K, Mandal K 2013 J. Lumin. 134 772

    [22]

    Fang D, Li L C, Xu W L, Wang Y L, Jiang M, Guo X Q, Liu X 2014 Sci. Engineer. B 179 71

    [23]

    Yamamoto Y, Baba N, Tajima S 1981 Nature 289 572

    [24]

    Li Y, Li G H, Meng G W, Zhang L D, Phillipp F 2001 J. Phys. Condens. Matter 13 2691

    [25]

    Huang G S, Wu X L, Yang L W, Shao X F, Siu G G, Chu P K 2005 Appl. Phys. A: Mater. Sci. Process 81 1345

    [26]

    Vrublevsky I, Chernyakova K, Ispas A, Bund A, Gaponik N, Dubavik A 2011 J. Lumin. 131 938

    [27]

    Rauf A, Mehmood M, Ahmed M, Hasan M, Aslam M 2010 J. Lumin. 130 792

    [28]

    Chen W, Tang H G, Shi C S, Deng J, Shi J Y, Zhou Y X, Xia S D, Wang Y X, Yin S T 1995 Appl. Phys. Lett. 67 317

    [29]

    Draeger B G, Summers G P 1979 Phys. Rev. B 19 1172

    [30]

    Fu G S, Wang X Z, Lu W B, Dai W L, Li X K, Yu W 2012 Chin. Phys. B 21 107802

    [31]

    Yang X B, Li H J, Bi Q Y, Cheng Y, Tang Q, Xu J 2008 J. Appl. Phys. 104 123112

  • [1]

    Keller F, Hunter M S, Robinson D L 1953 J. Electrochem. Soc. 100 411

    [2]

    Masuda H, Fukuda K 1995 Science 268 1466

    [3]

    Zhou W Y, Li Y B, Liu Z Q, Tang D S, Zou X P, Wang G 2001 Chin. Phys. B 10 0218

    [4]

    Cao H Q, Xu Y, Hong J M, Liu H B, Yin G, Li B L, Tie C Y, Xu Z 2001 Adv. Mater. 13 1393

    [5]

    Zhang J J, Li Z Y, Zhang H M, Hou X, Sun H Y 2013 Chin. Phys. B 22 087805

    [6]

    Pen D J, Mbindyo J K N, Carado A J, Mallouk T E, Keating C D, Razavi B, Mayer T S 2002 J. Phys. Chem. B 106 7458

    [7]

    Zhu X F, Han H, Song Y, Ma H T, Qi W X, Lu C, Xu C 2012 Acta Phys. Sin. 61 228202 (in Chinese) [朱绪飞, 韩华, 宋晔, 马宏图, 戚卫星, 路超, 徐辰 2012 物理学报 61 228202]

    [8]

    Li A P, Muller F, Briner A, Nielsch K, Gosele U 1999 Adv. Mater. 11 483

    [9]

    Nahar R K, Khanna V K 1998 Sens. Actuaors B 46 35

    [10]

    Kukhta A V, Gorokh G G, Kolesnik E E, Mitkovets A I, Taoubi M I, Koshin Y A 2002 Surf. Sci. 507-510 593

    [11]

    Azevedo W M, Oliveira G B, Silva Jr E F, Khoury H J, Oliveira de Jesus E F 2006 Radiat. Prot. Dosim. 119 201

    [12]

    Zhang B, Zhang H J, Yang Q H, Lu S Z 2010 Acta Phys. Sin. 59 1333 (in Chinese) [张斌, 张浩佳, 杨秋红, 陆神洲 2010 物理学报 59 1333]

    [13]

    Ghrib M, Ouertania R, Gaidia M 2012 Appl. Surf. Sci. 258 4995

    [14]

    Qin F F, Zhang H M, Wang C X, Guo C, Zhang J J 2014 Acta Phys. Sin. 63 198802 (in Chinese) [秦飞飞, 张海明, 王彩霞, 郭聪, 张晶晶 2014 物理学报 63 198802]

    [15]

    Xu W L, Zheng M J, Wu S, Shen W Z 2004 Appl. Phys. Lett. 85 4364

    [16]

    Liu J, Liu S, Zhou H H, Xie C J, Huang Z Y, Fu C P, Kuang Y F 2014 Thin Solid Films 552 75

    [17]

    Du Y, Cai W L, Mo C M, Chen J, Zhang L D, Zhu X G 1999 Appl. Phys. Lett. 74 2951

    [18]

    Sun X Y, Xu F Q, Li Z M, Zhang W H 2006 J. Lumin. 121 588

    [19]

    Huang G S, Wu X L, Mei Y F, Shao X F, Siu G G 2003 J. Appl. Phys. 93 582

    [20]

    Li Z J, Huang K L 2007 J. Lumin. 127 435

    [21]

    Khan G G, Singh A K, Mandal K 2013 J. Lumin. 134 772

    [22]

    Fang D, Li L C, Xu W L, Wang Y L, Jiang M, Guo X Q, Liu X 2014 Sci. Engineer. B 179 71

    [23]

    Yamamoto Y, Baba N, Tajima S 1981 Nature 289 572

    [24]

    Li Y, Li G H, Meng G W, Zhang L D, Phillipp F 2001 J. Phys. Condens. Matter 13 2691

    [25]

    Huang G S, Wu X L, Yang L W, Shao X F, Siu G G, Chu P K 2005 Appl. Phys. A: Mater. Sci. Process 81 1345

    [26]

    Vrublevsky I, Chernyakova K, Ispas A, Bund A, Gaponik N, Dubavik A 2011 J. Lumin. 131 938

    [27]

    Rauf A, Mehmood M, Ahmed M, Hasan M, Aslam M 2010 J. Lumin. 130 792

    [28]

    Chen W, Tang H G, Shi C S, Deng J, Shi J Y, Zhou Y X, Xia S D, Wang Y X, Yin S T 1995 Appl. Phys. Lett. 67 317

    [29]

    Draeger B G, Summers G P 1979 Phys. Rev. B 19 1172

    [30]

    Fu G S, Wang X Z, Lu W B, Dai W L, Li X K, Yu W 2012 Chin. Phys. B 21 107802

    [31]

    Yang X B, Li H J, Bi Q Y, Cheng Y, Tang Q, Xu J 2008 J. Appl. Phys. 104 123112

  • [1] 慕立鹏, 周姚, 赵建行, 王丽, 蒋礼, 周见红. 基于阳极氧化铝模板增强NaYF4:Yb3+/Er3+上转换发光研究. 物理学报, 2024, 73(3): 037803. doi: 10.7498/aps.73.20231405
    [2] 张建威, 牛莹, 闫润圻, 张荣奇, 曹猛, 李永东, 刘纯亮, 张嘉伟. 更正: 体空位缺陷对氧化铝二次电子发射特性的影响分析. 物理学报, 2024, 73(21): 219901. doi: 10.7498/aps.73.219901
    [3] 张建威, 牛莹, 闫润圻, 张荣奇, 曹猛, 李永东, 刘纯亮, 张嘉伟. 体空位缺陷对氧化铝二次电子发射特性的影响分析. 物理学报, 2024, 73(15): 157902. doi: 10.7498/aps.73.20240577
    [4] 冯晓伟, 李俊承, 王洪波, 常敬臻. 平板冲击下氧化铝陶瓷弹性前驱波衰减的细观机理. 物理学报, 2016, 65(16): 166201. doi: 10.7498/aps.65.166201
    [5] 高晓林, 王仕发, 向霞, 刘春明, 祖小涛. 聚丙烯酰胺凝胶法制备大孔-氧化铝及其发光性能研究. 物理学报, 2013, 62(1): 016105. doi: 10.7498/aps.62.016105
    [6] 王旭龙琦, 张冬仙, 章海军. 基于多孔氧化铝和单原子沉积技术的颜色调控方法研究. 物理学报, 2011, 60(5): 058104. doi: 10.7498/aps.60.058104
    [7] 高立, 张建民. 微量Mg掺杂ZnO薄膜的光致发光光谱和带隙变化机理研究. 物理学报, 2010, 59(2): 1263-1267. doi: 10.7498/aps.59.1263
    [8] 廖国进, 闫绍峰, 巴德纯. 铈掺杂氧化铝薄膜的蓝紫色发光特性. 物理学报, 2008, 57(11): 7327-7332. doi: 10.7498/aps.57.7327
    [9] 黄丽清, 潘华强, 王 军, 童慧敏, 朱 可, 任冠旭, 王永昌. 多孔氧化铝膜上自组织生长Sn纳米点阵列的研究. 物理学报, 2007, 56(11): 6712-6716. doi: 10.7498/aps.56.6712
    [10] 王成伟, 王 建, 李 燕, 刘维民, 徐 洮, 孙小伟, 力虎林. 多孔阳极氧化铝薄膜光学常数的确定. 物理学报, 2005, 54(1): 439-444. doi: 10.7498/aps.54.439
    [11] 徐大印, 刘彦平, 何志巍, 方泽波, 刘雪芹, 王印月. 多孔硅衬底上溅射沉积SiC:Tb薄膜的光致发光行为. 物理学报, 2004, 53(8): 2694-2698. doi: 10.7498/aps.53.2694
    [12] 马春兰. 高质量规则多孔氧化铝模板的制备. 物理学报, 2004, 53(6): 1952-1955. doi: 10.7498/aps.53.1952
    [13] 李晓溪, 贾天卿, 冯东海, 徐至展. 超短脉冲激光照射下氧化铝的烧蚀机理. 物理学报, 2004, 53(7): 2154-2158. doi: 10.7498/aps.53.2154
    [14] 李伙全, 宁兆元, 程珊华, 江美福. 射频磁控溅射沉积的ZnO薄膜的光致发光中心与漂移. 物理学报, 2004, 53(3): 867-870. doi: 10.7498/aps.53.867
    [15] 顾岚岚, 熊祖洪, 陈刚, 徐少辉. 掺铒硅多孔化后的光致发光特性. 物理学报, 2000, 49(2): 383-388. doi: 10.7498/aps.49.383
    [16] 杜英磊, 李纪焕, 吴柏枚, 金英猷. p型α-多孔SiC的光致发光光谱研究. 物理学报, 1998, 47(10): 1747-1753. doi: 10.7498/aps.47.1747
    [17] 刘 明, 何宇亮, 江兴流, 李国华, 韩和相. 纳米硅薄膜的光致发光特性. 物理学报, 1998, 47(5): 864-870. doi: 10.7498/aps.47.864
    [18] 刘小兵, 熊祖洪, 袁 帅, 陈彦东, 何 钧, 廖良生, 丁训民, 侯晓远. 多孔硅光致发光的温度效应研究. 物理学报, 1998, 47(8): 1391-1396. doi: 10.7498/aps.47.1391
    [19] 吴晓薇, 鲍希茂, 郑祥钦, 阎锋. 自然氧化引起的多孔硅光致发光光谱移动问题. 物理学报, 1994, 43(7): 1203-1207. doi: 10.7498/aps.43.1203
    [20] 陈光华, 阎少光, 张仿清. a-C:H薄膜的光致发光. 物理学报, 1992, 41(3): 500-505. doi: 10.7498/aps.41.500
计量
  • 文章访问数:  6372
  • PDF下载量:  539
  • 被引次数: 0
出版历程
  • 收稿日期:  2014-07-24
  • 修回日期:  2014-08-25
  • 刊出日期:  2014-12-05

/

返回文章
返回