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本文提出一种测量半导体中非平衡载流子寿命的新方法。这方法是测量触针下分布电阻的光电导相位移,在不同的表面情况和不同的激发光光谱成分下,导得各种结果表达式,文中对通常所使用的测量条件即粗磨表面和长波激发条件给出数值计算的结果。同时,对这些结果进行较为详细的分析和讨论,这个方法具有一系列的优点。例如:1)可以在锭状晶体上测量;2)表面处理十分简单;3)在样品上不需制作固定电极;4)测量仪器简单,操作方便;5)有一定准确度。这个方法可以检验不均匀材料,可供科研机关作研究用,更适合于工厂检验单晶材料用。用这方法在锗和硅样品上进行测量,测得寿命值基本上与其它方法的结果一致。A new method of measuring excess carriers lifetime in semiconductors is described. This method is for measuring photoconductive phaseshift of spreading resistance under a point contact. The expressions of various results are derived at various spectral components of exciting light and under various surface conditions. The calculated results for numerical values are given for commonly used conditions of measurement i.e. ground surface and exciting light of long wavelength. At the same time, a more detailed analysis and discussion are presented for these results. This method possesses many advantages, for example, (l) it can be used for measurement on ingot crystal; (2) the surface treatment is very simple; (3) no fixed electrode has to be made on the specimen; (4) measuring apparatus used is simple and easy to operate; (5) enough accuracy is obtainable.This method can be applied to test inhomogeneous specimen. It is used for study in scientific research institutions and it is more suitable for examining single crystal materials in the works. The measurements are made by this method on Ge and Si specimens. Results are in agreement with those obtained by other methods.
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