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采用化学溶液分解法(CSD)在Si衬底上制备了Bi2Ti2O7薄膜.X射线双晶衍射和原子力显微镜检测表明,所制备的薄膜主要为Bi2Ti2O7相的多晶材料.同时还研究了AuBi2Ti2O7/n-Si(100)结构的电容电压(C-V)特性,结果表明,在Bi2Ti2O
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关键词:
- C-V特性 /
- Bi2Ti2O7薄膜 /
- 电荷迁移
We report the growth of Bi2Ti2O7 thin films on n type Si substrates by the chemical solution decomposition technique. Both the X-ray double-crystal diffraction and atomic force micro spectroscopy measurements are used to check the film properties. It is shown that the film is a multi crystal film dominated by the Bi2Ti2O7 phase. The C-V measurements are also performed on Au/Bi2Ti2O7/n-Si(100) MOS structure. It is revealed that both the fixed and mobile negative charges are contained in the film. The mobile negative charge results in the hysteresis loops on C-V curve.-
Keywords:
- C-V characteristics /
- Bi2Ti2O7 thin films /
- charge's move
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