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Bi2Ti2O7/Si薄膜的制备及C-V特性研究

王少伟 陆卫 王弘 王栋 王民 沈学础

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Bi2Ti2O7/Si薄膜的制备及C-V特性研究

王少伟, 陆卫, 王弘, 王栋, 王民, 沈学础

C-V CHARACTERISTICS OF Bi2Ti2O7 THIN FILMS ON n-Si(100)

WANG SHAO-WEI, LU WEI, WANG HONG, WANG DONG, WANG MIN, SHEN XUE-CHU
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  • 采用化学溶液分解法(CSD)在Si衬底上制备了Bi2Ti2O7薄膜.X射线双晶衍射和原子力显微镜检测表明,所制备的薄膜主要为Bi2Ti2O7相的多晶材料.同时还研究了AuBi2Ti2O7/n-Si(100)结构的电容电压(C-V)特性,结果表明,在Bi2Ti2O
    We report the growth of Bi2Ti2O7 thin films on n type Si substrates by the chemical solution decomposition technique. Both the X-ray double-crystal diffraction and atomic force micro spectroscopy measurements are used to check the film properties. It is shown that the film is a multi crystal film dominated by the Bi2Ti2O7 phase. The C-V measurements are also performed on Au/Bi2Ti2O7/n-Si(100) MOS structure. It is revealed that both the fixed and mobile negative charges are contained in the film. The mobile negative charge results in the hysteresis loops on C-V curve.
    • 基金项目: 国家重点基础研究发展规划项目(批准号:G199808140404);国家自然科学基金(批准号:10074088)资助的课题.
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  • 文章访问数:  6331
  • PDF下载量:  775
  • 被引次数: 0
出版历程
  • 收稿日期:  2001-05-29
  • 修回日期:  2001-06-29
  • 刊出日期:  2001-06-05

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