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The Si thin films on ceramic substrates,which were fabricated by electron beam evaporation,were applied as charge induction layers in photon counting imaging system with induction readout. The structures and micrograph of Si thin films were studied. The X-ray diffraction (XRD) analysis and field emission scanning electron microscopy (FESEM) images indicate that the thin film has amorphous structure and is coarse due to the lattice boundary of ceramic substrate. The experimental setup was established and the detector resolution,counting rate,pulse height distribution curves etc., with different Si film thickness were compared. The results suggest that the film thickness influences on spatial resolution less than on the counting rate. Moreover,the properties of the system with Si and Ge thin films of the same resistance were compared,which shows that the properties such as distortion,counting rate and dark count rate are better with the Si films.
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Keywords:
- detectors /
- photon counting imaging /
- charge induction /
- microchannel plate
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[4] Maia J M, Mrmann D, Breskin A, Chechik R, Veloso J F C A, dos Santos J M F 2007 Nucl. Instrum. Meth. A 580 373
[5] Zhang X H, Zhao B S, Zhao F F, Liu Y A, Miao Z H 2009 Rev. Sci. Instrum. 80 033101
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[9] Liu Y A, Zhao B S, Zhu X P, Miao Z H, Zhang X H, Zou W 2009 Acta Photon. Sin. 38 750 (in Chinese) [刘永安、 赵宝升、 朱香平、 缪震华、 张兴华、 邹 玮 2009 光子学报 38 750]
[10] Zhang X H, Zhao B S, Miao Z H, Zhu X P, Liu Y A, Zou W 2008 Acta Phys. Sin. 57 4238 (in Chinese) [张兴华、 赵宝升、 缪震华、 朱香平、 刘永安、 邹 玮 2008 物理学报 57 4238]
[11] Zhao F F, Zhao B S, Zhang X H, Li W, Zou W, Sai X F, Wei Y L 2009 Acta Opt. Sin. 29 3236 (in Chinese) [赵菲菲、 赵宝升、 张兴华、 李 伟、 邹 玮、 赛小锋、 韦永林 2009 光学学报 29 3236]
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[1] Jagutzki O, Lapington J S, Worth L B C, Spillmann U, Mergel V, Schmidt-Bcking H 2002 Nucl. Instrum. Meth. A 477 256
[2] Barnstedt J, Grewing M 2002 Nucl. Instrum. Meth. A 477 268
[3] Lapington J S, Chakrabarti S , Cook T , Gsell J C, Gsell V T 2003 Nucl. Instrum. Meth. A 513 159
[4] Maia J M, Mrmann D, Breskin A, Chechik R, Veloso J F C A, dos Santos J M F 2007 Nucl. Instrum. Meth. A 580 373
[5] Zhang X H, Zhao B S, Zhao F F, Liu Y A, Miao Z H 2009 Rev. Sci. Instrum. 80 033101
[6] Jiao R Z, Feng C X, Ma H Q 2008 Acta Phys. Sin. 57 1352 (in Chinese) [焦荣珍、 冯晨旭、 马海强 2008 物理学报 57 1352]
[7] Zhang X H, Zhao B S, Liu Y A, Miao Z H, Zhu X P, Zhao F F 2009 Acta Phys. Sin. 58 1779 (in Chinese) [张兴华、 赵宝升、 刘永安、 缪震华、 朱香平、 赵菲菲 2008 物理学报 58 1779]
[8] Miao Z H, Zhao B S, Liu Y A, Zhu X P, Zhang X H 2008 Acta Photon. Sin. 37 11 (in Chinese) [缪震华、 赵宝升、 刘永安、 〖9] Zhu X P, Zhao B S, Liu Y A, Miao Z H, Zhang X H, Zou W 2008 Acta Opt. Sin. 28 1925 (in Chinese) [朱香平、 赵宝升、 刘永安、 缪震华、 张兴华、 邹 玮 2008 光学学报 28 1925]
[9] Liu Y A, Zhao B S, Zhu X P, Miao Z H, Zhang X H, Zou W 2009 Acta Photon. Sin. 38 750 (in Chinese) [刘永安、 赵宝升、 朱香平、 缪震华、 张兴华、 邹 玮 2009 光子学报 38 750]
[10] Zhang X H, Zhao B S, Miao Z H, Zhu X P, Liu Y A, Zou W 2008 Acta Phys. Sin. 57 4238 (in Chinese) [张兴华、 赵宝升、 缪震华、 朱香平、 刘永安、 邹 玮 2008 物理学报 57 4238]
[11] Zhao F F, Zhao B S, Zhang X H, Li W, Zou W, Sai X F, Wei Y L 2009 Acta Opt. Sin. 29 3236 (in Chinese) [赵菲菲、 赵宝升、 张兴华、 李 伟、 邹 玮、 赛小锋、 韦永林 2009 光学学报 29 3236]
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