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加速实验中, 参数退化模型描述了参数的退化规律, 参数退化规律对应于器件退化机理, 而退化机理又对应于内部的物理化学反应. 因此, 本文基于反应动力学中物理化学反应的温度效应速率模型及反应量浓度随时间的变化规律, 研究并建立了GaN LED参数退化模型. 本模型尝试从物理机理上解释参数退化过程中的退化规律, 包括单调上升或单调下降退化规律、先上升后下降或先下降后上升等非单调退化规律, 解决了实验后拟合方法不能建立非单调退化模型的问题. 然后对GaN LED进行加速实验, 确定模型参数. 同时对GaN LED的退化规律进行分解, 并且量化了GaN LED两种退化规律的退化比例及时间常数.The degradation of a device can be described by the degradation model in the accelerated tests. Because the degradation is closely related to the degradation mechanism, which reflects the intrinsic physical or chemical reactions, the degradation model can be established based on the temperature effect on the reaction rate and the change of reaction volume concentration in the physical/chemical reactions. Different degradation processes can be studied using the degradation model, including both the monotonic and nonmonotonic degradation processes. Moreover, the accelerated test is carried out for the GaN LED, figuring out the parameters for the degradation model, the ratio of different degradation processes, and the time constant.
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Keywords:
- parameter degradation model /
- chemical kinetics /
- accelerated test /
- GaN LED
[1] Jiang R, Lu H, Chen D J, Ren F F,Yan D W, Zhang R, Zheng Y D 2013 Chin. Phys. B 22 047805
[2] Yan Q R, Yan Q A, Shi P P, Niu Q L, Li S T, Zhang Y 2013 Chin. Phys. B 22 026102
[3] Xue Z Q, Huang S R, Zhang B P, Chen C 2010 Acta Phys. Sin. 59 5002 (in Chinese) [薛正群, 黄生荣, 张保平, 陈朝 2010 物理学报 59 5002]
[4] Hu J, Du L, Zhuang Y Q, Bao J L, Zhou J 2006 Acta Phys. Sin. 55 1384 (in Chinese) [胡瑾, 杜磊, 庄奕琪, 包军林, 周江 2006 物理学报 55 1384]
[5] Meeker W Q, Escobar L A, Lu C J A 1998 Technometrics 40 89
[6] Grillot P N, Krames M R, Zhao H, Teoh S H 2006 IEEE Trans. Device Mater. Rel. 6 564
[7] Huang J S 2005 IEEE Trans. Device Mater. Rel. 5 150
[8] Geng X M, Zhang J P, Xie X Z, Zhao K R 2005 Chinese Journal of Electron Devices 28 714 (in Chinese) [耿新民, 张建平, 谢秀中, 赵科仁 2005 电子器件 28 714]
[9] Wang L, Li X Y, Jiang T M, Wan B 2009 8th International Conference on Reliability, Maintainability and Safety Chengdu, China, July 20–242009 p1313
[10] Fan J J, Yung K C, Pecht M 2012 IEEE Trans. Device Mater. Rel. 12 470
[11] Zhou Y G, Ye X R, Zhai G F 2011 Prognostics and System Health Management Conference Shenzhen, China, May 24–25 2011 p1
[12] Chen H T, Yuan H J 201 IEEE 17th International Conference on Industrial Engineering and Engineering Management Xiamen China, October 29–31, 2010 p958
[13] Deng A M, Chen X, Zhang C H, Wang Y S 2007 Acta Armamentarll 8 1002 (in Chinese) [邓爱明, 陈循, 张春华, 汪亚顺 2007 兵工学报 8 1002]
[14] Guo C S, Wan N, Ma W D, Xiong C, Zhang G C, Feng S W 2011 Acta Phys. Sin. 60 128501 (in Chinese) [郭春生, 万宁, 马卫东, 熊聪, 张光沉, 冯士维 2011 物理学报 60 128501]
[15] Yang J F, Zhang J F, Zhang X K, Zhang X B 2011 Experiment al Technology and Management 28 26 (in Chinese) [杨景发, 张建飞, 张晓凯, 张锡冰 2011 实验技术与管理 28 62]
[16] Fons Janssen 2009 EDN China 16 46 (in Chinese) [Fons Janssen 2009 电子设计技术 16 46]
[17] Si F H 2008 Electronics & Packaging 8 12 (in Chinese) [斯芳虎 2008 电子与封装 8 12]
[18] Yang L Ma X H Feng Q, Hao Y 2008 Chin. Phys. B 17 2696
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[1] Jiang R, Lu H, Chen D J, Ren F F,Yan D W, Zhang R, Zheng Y D 2013 Chin. Phys. B 22 047805
[2] Yan Q R, Yan Q A, Shi P P, Niu Q L, Li S T, Zhang Y 2013 Chin. Phys. B 22 026102
[3] Xue Z Q, Huang S R, Zhang B P, Chen C 2010 Acta Phys. Sin. 59 5002 (in Chinese) [薛正群, 黄生荣, 张保平, 陈朝 2010 物理学报 59 5002]
[4] Hu J, Du L, Zhuang Y Q, Bao J L, Zhou J 2006 Acta Phys. Sin. 55 1384 (in Chinese) [胡瑾, 杜磊, 庄奕琪, 包军林, 周江 2006 物理学报 55 1384]
[5] Meeker W Q, Escobar L A, Lu C J A 1998 Technometrics 40 89
[6] Grillot P N, Krames M R, Zhao H, Teoh S H 2006 IEEE Trans. Device Mater. Rel. 6 564
[7] Huang J S 2005 IEEE Trans. Device Mater. Rel. 5 150
[8] Geng X M, Zhang J P, Xie X Z, Zhao K R 2005 Chinese Journal of Electron Devices 28 714 (in Chinese) [耿新民, 张建平, 谢秀中, 赵科仁 2005 电子器件 28 714]
[9] Wang L, Li X Y, Jiang T M, Wan B 2009 8th International Conference on Reliability, Maintainability and Safety Chengdu, China, July 20–242009 p1313
[10] Fan J J, Yung K C, Pecht M 2012 IEEE Trans. Device Mater. Rel. 12 470
[11] Zhou Y G, Ye X R, Zhai G F 2011 Prognostics and System Health Management Conference Shenzhen, China, May 24–25 2011 p1
[12] Chen H T, Yuan H J 201 IEEE 17th International Conference on Industrial Engineering and Engineering Management Xiamen China, October 29–31, 2010 p958
[13] Deng A M, Chen X, Zhang C H, Wang Y S 2007 Acta Armamentarll 8 1002 (in Chinese) [邓爱明, 陈循, 张春华, 汪亚顺 2007 兵工学报 8 1002]
[14] Guo C S, Wan N, Ma W D, Xiong C, Zhang G C, Feng S W 2011 Acta Phys. Sin. 60 128501 (in Chinese) [郭春生, 万宁, 马卫东, 熊聪, 张光沉, 冯士维 2011 物理学报 60 128501]
[15] Yang J F, Zhang J F, Zhang X K, Zhang X B 2011 Experiment al Technology and Management 28 26 (in Chinese) [杨景发, 张建飞, 张晓凯, 张锡冰 2011 实验技术与管理 28 62]
[16] Fons Janssen 2009 EDN China 16 46 (in Chinese) [Fons Janssen 2009 电子设计技术 16 46]
[17] Si F H 2008 Electronics & Packaging 8 12 (in Chinese) [斯芳虎 2008 电子与封装 8 12]
[18] Yang L Ma X H Feng Q, Hao Y 2008 Chin. Phys. B 17 2696
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