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为解决传统电场传感器测量范围受限的技术难题, 设计了一种基于光学Parity-Time(PT)对称掺杂电光介质的微腔结构, 提出新的电场传感机制. 利用传输矩阵方法计算结构的传输谱, 发现独特的放大的缺陷模式. 缺陷模式的峰值和波长位置均随外电场变化, 由此可以利用缺陷模峰值变化和波长位置变化两种机制测量同一电场. 测量范围仅受电光介质击穿电场的限制, 可以为0—0.06 V/nm, 几乎涵盖了可能的电场环境. 对峰值变化传感机制, 灵敏度范围38.042—47.558 nm/V; 对波长变化传感机制, 灵敏度范围18.357—18.642 nm2/V, 在测量范围内平均分辨率为0.00925 V/nm.
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关键词:
- 电场传感 /
- Parity-Time 对称结构 /
- 缺陷模
In order to solve the technical problem of the traditional electric field sensor limited by its measurement range, a parity-time (PT) symmetric microcavity structure doped by electro-optical medium is designed, and a new electric field sensing mechanism is proposed. The transfer matrix method is used to calculate the transmission spectrum of the structure. A unique amplified defect mode is found. The peak value and wavelength position of the defect mode vary with the external electric field. The same electric field can be measured by using two mechanisms. One is to detect the change of the defect mode peak value, and the other is to measure the change of the defect mode wavelength position. The measurement range is limited only by the breakdown field value of the electro-optical medium, which can range from 0 to 0.06 V/nm, covering almost any possible electric field environment. For the peak-value sensing mechanism, the sensitivity range is 38.042—47.558 (nm/V); for the wavelength position sensing mechanism, the sensitivity range is 18.357—18.642 (nm2/V), and the average resolution in the measurement range is 0.00925 V/nm.-
Keywords:
- electric field sensor /
- parity-time symmetry structure /
- defect mode
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图 2 A, C层的介电常数的实部和虚部随波长的分布
Fig. 2. The real part and imaginary part of layers A and C, respectively.
图 5 周期数不同时的结构透射谱 (a) N = 5; (b) N = 6; (c) N = 7
Fig. 5. The transmission spectra of the structure with different period number: (a) N = 5; (b) N = 6; (c) N = 7.
图 6 两种
${{\omega }_0}$ 的取值得到的传输谱Fig. 6. The transmission spectra of the structure with two values of
${{\omega }_0}$ .
图 7 两种方法研究结构周期数N = 6时缺陷模在结构内部对应的场分布 (a) 传输矩阵方法; (b) comsol软件频域仿真
Fig. 7. The field distributions inside the structure with N = 6: (a) Calculation based on the transfer matrix method; (b) frequency domain simulation based on Comsol.
图 9 不同电场条件下结构共振腔的透射谱
Fig. 9. The transmission spectra of the structure with different ecetric fields.
图 10 (a)缺陷模峰值大小与电场的变化关系; (b)传感灵敏度
Fig. 10. (a) The peak value of defect mode versus the electric field; (b) the sensor sensitivity.
图 11 (a)缺陷模波长与电场的变化关系; (b)灵敏度分布
Fig. 11. (a) The wavelength of defect mode versus the electric field; (b) the sensor sensitivity.
图 12 传感器分辨率的确定, 图中标注峰值间隔等于峰的半角宽度
Fig. 12. The determination of resolution. The interval of two peaks is just equal to the half-angular breadth.
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[1] Fort A, Mugnaini M, Vignoli V, et al. 2011 IEEE Trans. Instrum. Meas. 60 2778
Google Scholar
[2] Bateman M G, Stewart M F, Podgorny S J, et al. 2007 J. Atmos. Oceanic. Technol. 24 1245
Google Scholar
[3] 郑凤杰, 夏善红, 陈贤祥 2008 传感技术学报 21 946
Google Scholar
Zheng F J, Xia S H, Chen X X 2008 Chinese J. Sens. Actuators 21 946
Google Scholar
[4] Kainz A, Steiner H, Schalko J, Jachimowicz A, Kohl F, Stifter M, Beigelbeck R, Keplinger F, Hortschitz W 2018 Nat. Electron. 1 68
Google Scholar
[5] Xiao K, Jin X, Jin X, et al. 2017 IEEE Antennas Wirel. Propag. 16 2203
Google Scholar
[6] Lu T B, Feng H, Zhao Z B, Cui X 2007 IEEE Trans. Magn. 43 1221
Google Scholar
[7] Bobowski J S, Ferdous M S, Johnson T 2015 IEEE Trans. Instrum. Meas. 64 923
Google Scholar
[8] Shoory A, Rachidi F, Rubinstein M, et al. 2011 IEEE Trans. Electromagn. Compat. 53 792
Google Scholar
[9] Miki M 2002 J. Geophys. Res. 107 4277
Google Scholar
[10] Giles J C, Prather W D 2013 IEEE Trans. Electromagn. Compat. 55 475
Google Scholar
[11] 付尚琛, 石立华, 周颖慧, 郭一帆 2018 复合材料学报 35 2730
Fu S S, Shi L H, Zhou X H, Guo Y F 2018 Acta Mater. Compos. Sin. 35 2730
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Google Scholar
Chen W Y, Zeng R, Liang Y D, He J L 2006 J. Tsinghua Univ. 46 1641
Google Scholar
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Google Scholar
[14] Lin Z, Ramezani H, Eichelkraut T, et al. 2011 Phys. Rev. Lett. 106 213901
Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
[20] 韦伟, 于建, 纪磊, 等 2005 人工晶体学报 34 628
Google Scholar
Wei W, Yu J, Ji L 2005 J. Synth. Cryst. 34 628
Google Scholar
[21] 奚庆新, 刘德安, 刘立人 2005 激光与光电子学进展 42 39
Xu Q X, Liu D A, Liu L R 2005 Laser & Optoelectron. Prog. 42 39
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Google Scholar
Chen J H, Qu S B, Wei X Y, Xu Z, Zhu L H 2008 J. Inorg. Mater. 23 851
Google Scholar
[23] Luennemann M, Hartwig U, Panotopoulos G, et al. 2003 Appl. Phys. B 76 403
Google Scholar
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