| [1] |
Yuan Ying-Kuo, Guo Wei-Ling, Du Zai-Fa, Qian Feng-Song, Liu Ming, Wang Le, Xu Chen, Yan Qun, Sun Jie. Applications of graphene transistor optimized fabrication process in monolithic integrated driving gallium nitride micro-light-emitting diode. Acta Physica Sinica,
2021, 70(19): 197801.
doi: 10.7498/aps.70.20210122
|
| [2] |
Li Shun, Song Yu, Zhou Hang, Dai Gang, Zhang Jian. Statistical characteristics of total ionizing dose effects of bipolar transistors. Acta Physica Sinica,
2021, 70(13): 136102.
doi: 10.7498/aps.70.20201835
|
| [3] |
Zhou Guang-Zheng, Li Ying, Lan Tian, Dai Jing-Jing, Wang Cong-Cong, Wang Zhi-Yong. Design and simulation of integration of vertical cavity surface emitting lasers and heterojunction bipolar transistor. Acta Physica Sinica,
2019, 68(20): 204203.
doi: 10.7498/aps.68.20190529
|
| [4] |
Zhu Yan-Xu, Song Hui-Hui, Wang Yue-Hua, Li Lai-Long, Shi Dong. Design and fabrication of high electron mobility transistor devices with gallium nitride-based. Acta Physica Sinica,
2017, 66(24): 247203.
doi: 10.7498/aps.66.247203
|
| [5] |
Liu Yun-Feng, Liu Bin, He Xing-Dao, Li Shu-Jing. High efficiency all-optical diode based on hexagonal lattice photonic crystal waveguide. Acta Physica Sinica,
2016, 65(6): 064207.
doi: 10.7498/aps.65.064207
|
| [6] |
Tan Ji, Zhu Yang-Jun, Lu Shuo-Jin, Tian Xiao-Li, Teng Yuan, Yang Fei, Zhang Guang-Yin, Shen Qian-Xing. Modeling and simulation of the insulated gate bipolar transistor turn-off voltage slope under inductive load. Acta Physica Sinica,
2016, 65(15): 158501.
doi: 10.7498/aps.65.158501
|
| [7] |
Guo Chun-Sheng, Li Shi-Wei, Ren Yun-Xiang, Gao Li, Feng Shi-Wei, Zhu Hui. Influence of power dissipation and case temperature on thermal resistance of AlGaN/GaN high-speed electron mobility transistor. Acta Physica Sinica,
2016, 65(7): 077201.
doi: 10.7498/aps.65.077201
|
| [8] |
Li Zhi-Peng, Li Jing, Sun Jing, Liu Yang, Fang Jin-Yong. High power microwave damage mechanism on high electron mobility transistor. Acta Physica Sinica,
2016, 65(16): 168501.
doi: 10.7498/aps.65.168501
|
| [9] |
Li Pei, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Wang Xin, Zhang Jin-Xin. Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor. Acta Physica Sinica,
2015, 64(11): 118502.
doi: 10.7498/aps.64.118502
|
| [10] |
Jia Xiao-Jie, Ai Bin, Xu Xin-Xiang, Yang Jiang-Hai, Deng You-Jun, Shen Hui. Two-dimensional device simulation and performance optimization of crystalline silicon selective-emitter solar cell. Acta Physica Sinica,
2014, 63(6): 068801.
doi: 10.7498/aps.63.068801
|
| [11] |
Liu Jing, Wu Yu, Gao Yong. Research on SiGe heterojunction bipolar transistor with a trench-type emitter. Acta Physica Sinica,
2014, 63(14): 148503.
doi: 10.7498/aps.63.148503
|
| [12] |
Lu Dong, Jin Dong-Yue, Zhang Wan-Rong, Zhang Yu-Jie, Fu Qiang, Hu Rui-Xin, Gao Dong, Zhang Qing-Yuan, Huo Wen-Juan, Zhou Meng-Long, Shao Xiang-Peng. Novel microwave power sige heterojunction bipolar transistor with high thermal stability over a wide temperature range. Acta Physica Sinica,
2013, 62(10): 104401.
doi: 10.7498/aps.62.104401
|
| [13] |
Ma Zhen-Yang, Chai Chang-Chun, Ren Xing-Rong, Yang Yin-Tang, Qiao Li-Ping, Shi Chun-Lei. The damage effect and mechanism of the bipolar transistor induced by different types of high power microwaves. Acta Physica Sinica,
2013, 62(12): 128501.
doi: 10.7498/aps.62.128501
|
| [14] |
Xiao Ying, Zhang Wan-Rong, Jin Dong-Yue, Chen Liang, Wang Ren-Qing, Xie Hong-Yun. Effect of bandgap engineering on thermal characteristic of radiofrequency power SiGe heterojunction bipolar transistor. Acta Physica Sinica,
2011, 60(4): 044402.
doi: 10.7498/aps.60.044402
|
| [15] |
Zhai Ya-Hong, Li Ping, Zhang Guo-Jun, Luo Yu-Xiang, Fan Xue, Hu Bin, Li Jun-Hong, Zhang Jian, Su Ping. Radiation-resistant bipolar n-p-n transistor. Acta Physica Sinica,
2011, 60(8): 088501.
doi: 10.7498/aps.60.088501
|
| [16] |
Chen Liang, Zhang Wan-Rong, Jin Dong-Yue, Xie Hong-Yun, Xiao Ying, Wang Ren-Qing, Ding Chun-Bao. Improvement on thermal stability of power heterojunction bipolar transistor using non-uniform finger spacing. Acta Physica Sinica,
2011, 60(7): 078501.
doi: 10.7498/aps.60.078501
|
| [17] |
Zou Jian-Hua, Lan Lin-Feng, Xu Rui-Xia, Yang Wei, Peng Jun-Biao. Integration of organic thin-film transistor and polymer light-emitting diodes. Acta Physica Sinica,
2010, 59(2): 1275-1281.
doi: 10.7498/aps.59.1275
|
| [18] |
Zheng Yu-Zhan, Lu Wu, Ren Di-Yuan, Wang Yi-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa. Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas. Acta Physica Sinica,
2009, 58(8): 5572-5577.
doi: 10.7498/aps.58.5572
|
| [19] |
. . Acta Physica Sinica,
1975, 24(5): 327-330.
doi: 10.7498/aps.24.327
|
| [20] |
CHENG CHUNG-CHIH. ANALYSIS OF JUNCTION TRANSISTOR CONVERTERS. Acta Physica Sinica,
1959, 15(10): 525-534.
doi: 10.7498/aps.15.525
|
下载:
