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绝缘栅双极型晶体管感性负载关断下电压变化率的建模与仿真研究

谭骥 朱阳军 卢烁今 田晓丽 滕渊 杨飞 张广银 沈千行

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绝缘栅双极型晶体管感性负载关断下电压变化率的建模与仿真研究

谭骥, 朱阳军, 卢烁今, 田晓丽, 滕渊, 杨飞, 张广银, 沈千行

Modeling and simulation of the insulated gate bipolar transistor turn-off voltage slope under inductive load

Tan Ji, Zhu Yang-Jun, Lu Shuo-Jin, Tian Xiao-Li, Teng Yuan, Yang Fei, Zhang Guang-Yin, Shen Qian-Xing
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  • 绝缘栅双极型晶体管(IGBT)多用于感性负载下的电力电子线路中. 这导致了在器件关断过程中集电极电压上升阶段时集电极电流仍然保持在额定电流值,从而造成大量的能量损耗. 集电极电压的上升过程可以看作是栅极电流对集电极与栅极之间的电容(即米勒电容)充电的过程. 本文提出一种解析模型,通过计算米勒电容值随时间的变化来预测IGBT在关断过程中集电极电压值的变化. 在对米勒电容的计算上,不仅考虑了电容值与其端电压之间的依赖关系,同时也考虑到关断过程中耗尽区存在的大量载流子对电容值的影响,使得模型更加准确. 最后,运用数值计算仿真软件对绝缘栅双极型晶体管的关断过程进行了模拟,对本文提出的模型进行了验证. 仿真结果与模型计算结果显示出良好的一致性.
    The insulated gate bipolar transistor (IGBT) has developed rapidly as a key power device for medium power application since it was first introduced. It is well known for its relatively low conduction loss and easy gate control. The IGBT is commonly seen in the inductive load application circuit. Due to the large inductive load, the current of the IGBT will stay high until the voltage rises to the bus voltage during the IGBT turn-off. After that, the current starts to decrease and IGBT goes into the tail-current procedure withstanding high voltage. When evaluating the turn-off loss of IGBT, the fall time and the tail current are commonly taken into consideration because these two features are known as good representations of power loss during tail-current procedure. However, the power loss occurring during the voltage rise, which is usually neglected, can also be a significant contributor to the total turn-off loss. The dv/dt determines the voltage rise time and the power loss during this procedure. Thus, predicting the dv/dt is essential for evaluating the power loss during the IGBT turn-off. In this paper, the turn-off transient is divided into four stages and the physical mechanism which determines the dv/dt during the turn-off transient is carefully investigated. An analytical model to characterize the dv/dt during IGBT inductive turn-off is derived based on the calculated miller capacitance values. The functions of the miller capacitance and the dv/dt against time are presented to predict the collector voltage waveform during the IGBT turn-off. To make the model more accurate, the current dependence is considered when calculating the miller capacitance as well as the voltage dependency. The derived model shows that the dv/dt increases nonlinearly with the time going by and can be influenced by several factors, including the drive circuit conditions, the collector current and the carrier concentration profile in the ON-state. Further investigation indicates that the ON-state carrier concentration is greatly influenced by the IGBT cell structure. Thus, the model presented in this paper is effective in both the estimation of IGBT turn-off loss and the guidance of device structure design. The prediction of the derived model shows good agreement with the two-dimensional numerical simulation by Sentaurus TCAD (with the relative error not exceeding 10%) for the IGBT turn-off over a broad range of the collector current values. The device structure simulated in this paper is based on the 650 V/60 A trench-FS-IGBT. The thickness values of the total structure and the buffer layer are 80 m and 20 m, respectively.
      通信作者: 朱阳军, zhuyangjun@ime.ac.cn
    • 基金项目: 国家重大科技专项(批准号:2013ZX02305-005-002)、国家自然科学基金(批准号:51490681)和省院合作高技术产业化专项资金项目(批准号:2016SYHZ0026)资助的课题.
      Corresponding author: Zhu Yang-Jun, zhuyangjun@ime.ac.cn
    • Funds: Project supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2013ZX02305-005-002), the National Natural Science Foundation of China (Grant No. 51490681), and the Cooperation of Province and Academy Special Funds of High Technology and Industrialization, China (Grant No. 2016SYHZ0026).
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    [11]

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    [12]

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  • [1]

    Lwamoto H, Kondo H, Yu Y, Kawakami A, Nakaoka M 2001 IEE Proc. -Electr. Power Appl. 148 443

    [2]

    Eckel H G, Fleisch K 2008 13th International Power Electronics and Motion Control Conference Poznan, Poland, September 1-3, 2008 p48

    [3]

    Ramamurthy A, Sawant S, Baliga B J 1999 IEEE Trans. Power Electron. 14 601

    [4]

    Hefner A R, Blackburn D L 1988 Solid-State Electron 31 1513

    [5]

    Hefner A R 1990 IEEE Trans. Power Electron. 5 459

    [6]

    Bryant A, Yang S Y, Mawby P, Xiang D W, Ran L, Tavner P, Palmer P R 2011 IEEE Trans. Power Electron. 26 3019

    [7]

    Trivedi M, Shenai K 1997 IEEE Trans. Electron Dev. 44 887

    [8]

    Zhang J P, Li Z H, Zhang B, Li Z J 2014 Chin. Phys. B 23 088504

    [9]

    Wang H, Zhang B 2010 International Conference on Communications, Circuits and Systems (ICCCAS) Chengdu, China, July 28-30, 2010 p532

    [10]

    Eio S, Shammas N Y A 2008 Universities Power Engineering Conference Padova, Italy, September 1-4, 2008 p1

    [11]

    Baliga B J 2008 Fundamentals of Power Semiconductor Devices (New York: Springer) pp390-400

    [12]

    Tominaga S, Urushibata H, Fujita H, Akagi H, Horiguchi T 2011 Proc. EPE Birmingham, England, August 30-September 1, 2011 p1

    [13]

    Yang X, Otsuki M, Palmer P R 2015 IET Power Electron. 8 417

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出版历程
  • 收稿日期:  2016-04-19
  • 修回日期:  2016-04-27
  • 刊出日期:  2016-08-05

绝缘栅双极型晶体管感性负载关断下电压变化率的建模与仿真研究

  • 1. 中国科学院微电子研究所, 北京 100029;
  • 2. 江苏物联网研究发展中心, 无锡 214135
  • 通信作者: 朱阳军, zhuyangjun@ime.ac.cn
    基金项目: 国家重大科技专项(批准号:2013ZX02305-005-002)、国家自然科学基金(批准号:51490681)和省院合作高技术产业化专项资金项目(批准号:2016SYHZ0026)资助的课题.

摘要: 绝缘栅双极型晶体管(IGBT)多用于感性负载下的电力电子线路中. 这导致了在器件关断过程中集电极电压上升阶段时集电极电流仍然保持在额定电流值,从而造成大量的能量损耗. 集电极电压的上升过程可以看作是栅极电流对集电极与栅极之间的电容(即米勒电容)充电的过程. 本文提出一种解析模型,通过计算米勒电容值随时间的变化来预测IGBT在关断过程中集电极电压值的变化. 在对米勒电容的计算上,不仅考虑了电容值与其端电压之间的依赖关系,同时也考虑到关断过程中耗尽区存在的大量载流子对电容值的影响,使得模型更加准确. 最后,运用数值计算仿真软件对绝缘栅双极型晶体管的关断过程进行了模拟,对本文提出的模型进行了验证. 仿真结果与模型计算结果显示出良好的一致性.

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