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通过引入n+阳极在体内集成续流二极管的逆导型横向绝缘栅双极晶体管（Reverse-Conducting Lateral Insulated Gate Bipolar Transistor，RC-LIGBT）可以实现反向导通，并且优化器件的关断特性，是功率集成电路中一个有竞争力的器件。本文提出了一种新型载流子积累的RC-LIGBT，它具有电子控制栅（Electron-controlled Gate，EG）和分离短路阳极（Separated Short-Anode，SSA），可以同时实现较低的导通压降和关断损耗。在正向导通状态，漂移区上方的EG结构可以在漂移区的表面积累一个高密度的电子层，从而大大地降低器件的导通压降。同时，SSA结构的使用也极大优化了器件的关断损耗。另外，低掺杂p型漂移区与SSA结构配合，可以简单地实现反向导通并且消除回吸电压。仿真结果表明，所提出的器件具有优秀的导通压降与关断损耗之间的折衷关系，其导通压降为1.16V，比SSA LIGBT低55%，其关断损耗为0.099mJ/cm2，比SSA LIGBT和常规LIGBT分别低38.5%和94.7%。Reverse-Conducting Lateral Insulated Gate Bipolar Transistor (RC-LIGBT) with freewheeling diode integrated in the body by introducing n+ anode can realize the reverse conduction and optimize the turn-off characteristics of the device, which is a promising device in power integrated circuits. In this paper, a novel RC-LIGBT with Electron-controlled Gate (EG) and Separated Short-Anode (SSA) is proposed and investigated by TCAD simulation, which can achieve low on-state voltage drop (Von) and low turn-off loss (Eoff) at the same time. The EG structure of p-n-n+-p (p+ region/ n-type silicon region/n-type barrier layer/p+ region) is adopted, the gate and anode electrodes are connected by the EG structure. In the forward conduction state, a high-density electron accumulation layer is formed on the surface of the drift region by EG structure, which greatly reduces the Von of the device. At the same time, the use of the SSA structure can also optimize the Eoff of the device by forming an additional electron extraction channel. In addition, based on the EG structure, a low-doping p-drift can be combined with the SSA structure to simply achieve reverse-conduction and snapback-free characteristics. What's more, the EG structure and the SSA structure can complement each other. On the one hand, the high-density electron accumulation layer formed by EG structure compensates for the weakened conductance modulation effect caused by the SSA structure. On the other hand, the electron extraction channel of the SSA structure enables a large number of accumulated electrons to be removed quickly. The simulation results show that the proposed device has an excellent tradeoff relationship between Von and Eoff, the Von is 1.16V, which is 55% lower than that of SSA LIGBT, and the Eoff is 0.099mJ/cm2, which is 38.5% and 94.7% lower than that of SSA LIGBT and conventional LIGBT, respectively.
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Keywords:
- Carrier accumulation /
- RC-LIGBT /
- on-state voltage drop /
- snapback voltage
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