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沟槽型发射极SiGe异质结双极化晶体管新结构研究

刘静 武瑜 高勇

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沟槽型发射极SiGe异质结双极化晶体管新结构研究

刘静, 武瑜, 高勇

Research on SiGe heterojunction bipolar transistor with a trench-type emitter

Liu Jing, Wu Yu, Gao Yong
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  • 提出了一种沟槽型发射极SiGe异质结双极化晶体管新结构. 详细分析了新结构中沟槽型发射极的引入对器件性能的影响,并对其机理进行研究. 新型发射极结构通过改变发射极电流路径使电阻分区并联,在不增大结电容的前提下,有效减小发射极电阻,提高器件的频率特性. 结果表明,新结构器件的截止频率和最大振荡频率分别增加至100.2 GHz和134.4 GHz,更重要的是沟槽型发射极结构的引入,在提高器件频率特性的同时,不会降低器件的电流增益,也不会增加结电容,很好实现了频率特性、电流增益和结电容之间的折中. 对沟槽型发射极进行优化设计,改变侧墙高度和侧墙宽度. 沟槽型发射极电阻不受侧墙高度改变的影响,频率性能不变;侧墙宽度增加,频率性能降低.
    A novel SiGe heterojunction bipolar transistor (HBT) with a trench-type emitter is presented. Effects of the trench-type emitter on device performance are analyzed in detail, and current transport mechanism of the novel device is studied. The emitter resistances are parallel partitions by changing current path. Under the precondition without increasing the junction capacitance, the resistances of the new emitter are reduced effectively, and the frequency characteristics of the device are improved. Results show that the cutoff frequency and the maximum oscillation frequency of the new device are increased to 100.2 GHz and 134.4 GHz, respectively. More important is that the frequency characteristics are improved by the introduction of the trench-type emitter, while the current gain is not reduced and the junction capacitance is also not increased. A good trade-off is achieved among frequency, current gain, and junction capacitance. The trench-type emitter is designed to be optimal. With the change in sidewall height, no effects are found on the emitter resistances, and the frequency characteristics do not change, while the frequency characteristics are reduced when the sidewall width is increased.
    • 基金项目: 国家自然科学基金(批准号:61204094)、高等学校博士学科点专向科研基金(批准号:20106118120003)、陕西省工业攻关(批准号:2014K08-30)和陕西省教育厅科学研究计划(批准号:11JK0924)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61204094), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20106118120003), the Industrial Research Projects of Shanxi, China (Grant No. 2014K08-30), and the Specialized Scientific Research of the Education Bureau of Shaanxi, China (Grant No. 11JK0924).
    [1]

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    [2]

    Hadi R A, Grzyb J, Heinemann B, Pfeiffer U R 2013 IEEE J. Solid-St. Circ. 48 2002

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    Jia S M, Yang R X, Guo H J 2011 7th International Conference on Wireless Communication, Networking and Mobile Computing, Wuhan, China, Sept. 23-25, 2011 p1

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    Chevalier P, Meister T F, Heinemann B, Van H S, Liebl W, Fox A, Sibaja H A, Chantre A 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Atlanta, GA, United States, Oct. 9-11, 2011 p57

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    Schroter M, Wedel G, Heinemann B, Jungemann C, Krause J, Chevalier P, Chantre A 2011 IEEE Trans. Electr. Dev. 58 3687

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    Chevalier P, Barbalat B, Rubaldo L, Vandelle B, Dutartre D, Bouillon P, Jagueneau T, Richard C, Saguin F, Margain A, Chantre A 2005 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, Santa Barbara, CA, United States, Oct. 9-11, 2005 p120

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    Dacquay E, Tomkins A, Yau K H K, Laskin E, Chevalier P, Chantre A, Sautreuil B, Voinigescu S P 2012 IEEE Trans. Microw. Theory 60 813

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    Chevalier P, Fellous C, Rubaldo L, Pourchon F, Pruvost S, Beerkens R, Saguin F, Zerounian N, Barbalat B, Lepilliet S, Dutartre D, Celi D, Telliez I, Gloria D, Aniel F, Danneville F, Chantre A 2005 IEEE J. Solid-St. Circ. 40 2025

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    Xu X B, Zhang H M, Hu H Y 2011 Acta Phys. Sin. 60 118501 (in Chinese) [徐小波, 张鹤鸣, 胡辉勇 2011 物理学报 60 118501]

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    Zhang J X, Guo H X, Guo Q, Wen L, Cui J W, Xi S B, Wang X, Deng W 2013 Acta Phys. Sin. 62 048501 (in Chinese) [张晋新, 郭红霞, 郭旗, 文林, 崔江维, 席善斌, 王信, 邓伟 2013 物理学报 62 048501]

    [13]

    Misra, P K, Qureshi S 2013 IEEE J. Electr. Dev. Society 1 92

    [14]

    Liu J, Guo F, Gao Y 2014 Acta Phys. Sin. 63 048501 (in Chinese) [刘静, 郭飞, 高勇 2014 物理学报 63 048501]

    [15]

    Peng C, Liu Q, Camillo C R, Liedy B, Adkisson J, Pekarik J, Gray P, Kaszuba P, Moszkowicz L, Zetterlund B, Macha K, Tallman K, Khater M, Harame D 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Portland, OR, United States, Sept. 30-Oct. 3, 2012 p1

    [16]

    Fox A, Heinemann B, Barth R, Marschmeyer S, Wipf C, Yamamoto Y 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Atlanta, GA, United States, Oct. 9-11, 2011 p70

    [17]

    Jagnnathan B, Khater M, Pagette F, Rieh J S, Angell D, Chen H, Florkey J, Golan F, Greenberg D R, Groves R, Jeng S J, Johnson J, Mengistu E, Schonenberg K T, Schnabel C M, Smith P, Stricker A, Ahlgren D, Freeman G, Stein K, Subbanna S 2002 IEEE Electr. Dev. Lett. 23 258

    [18]

    Jia X Z, Hu H Y, Zhang H M, Dai X Y 2005 Chin. Phys. 14 1439

    [19]

    Rieh J S, Greenberg D, KHater M, Schonenberg K T, Jeng S J, Pagette F, Adam T, Chinthakindi A, Florkey J, Jagannathan B, Johnson J, Krishnasamy R, Sanderson D, Schnabel C, Smith P, Stricker A, Sweeney S, Vaed K, Yanagisawa T, Ahlgren D, Stein K, Freeman G 2004 IEEE Radio Frequency Integrated Circuits Symposium, Hsinchu, China, June 6-8, 2004 p395

    [20]

    Chen W L, Chau H F, Tutt M, Ho M C, Kim T S, Henderson T 1997 IEEE Electr. Dev. Lett. 18 355

    [21]

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  • [1]

    Rieh J S, Jagannathan B, Greenberg D R, Meghelli M, Rylyakov A, Guarin F, Zhi J Y, Ahlgren D C, Freenman G, Cottrell P, Harame D 2004 IEEE Trans. Microw. Theory 52 2390

    [2]

    Hadi R A, Grzyb J, Heinemann B, Pfeiffer U R 2013 IEEE J. Solid-St. Circ. 48 2002

    [3]

    Jiahui Y, Cressler J D 2011 IEEE Trans. Electr. Dev. 58 1655

    [4]

    Pekarik J J, Adkisson J W, Camillo C R, Cheng P, Divergilio A W, Gray P B, Jain V, Kaushal V, Khater M H, Liu Q, Harame D L 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Portland, OR, United States, Sept. 30-Oct. 3, 2012 p1

    [5]

    Jia S M, Yang R X, Guo H J 2011 7th International Conference on Wireless Communication, Networking and Mobile Computing, Wuhan, China, Sept. 23-25, 2011 p1

    [6]

    Chevalier P, Meister T F, Heinemann B, Van H S, Liebl W, Fox A, Sibaja H A, Chantre A 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Atlanta, GA, United States, Oct. 9-11, 2011 p57

    [7]

    Schroter M, Wedel G, Heinemann B, Jungemann C, Krause J, Chevalier P, Chantre A 2011 IEEE Trans. Electr. Dev. 58 3687

    [8]

    Chevalier P, Barbalat B, Rubaldo L, Vandelle B, Dutartre D, Bouillon P, Jagueneau T, Richard C, Saguin F, Margain A, Chantre A 2005 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, Santa Barbara, CA, United States, Oct. 9-11, 2005 p120

    [9]

    Dacquay E, Tomkins A, Yau K H K, Laskin E, Chevalier P, Chantre A, Sautreuil B, Voinigescu S P 2012 IEEE Trans. Microw. Theory 60 813

    [10]

    Chevalier P, Fellous C, Rubaldo L, Pourchon F, Pruvost S, Beerkens R, Saguin F, Zerounian N, Barbalat B, Lepilliet S, Dutartre D, Celi D, Telliez I, Gloria D, Aniel F, Danneville F, Chantre A 2005 IEEE J. Solid-St. Circ. 40 2025

    [11]

    Xu X B, Zhang H M, Hu H Y 2011 Acta Phys. Sin. 60 118501 (in Chinese) [徐小波, 张鹤鸣, 胡辉勇 2011 物理学报 60 118501]

    [12]

    Zhang J X, Guo H X, Guo Q, Wen L, Cui J W, Xi S B, Wang X, Deng W 2013 Acta Phys. Sin. 62 048501 (in Chinese) [张晋新, 郭红霞, 郭旗, 文林, 崔江维, 席善斌, 王信, 邓伟 2013 物理学报 62 048501]

    [13]

    Misra, P K, Qureshi S 2013 IEEE J. Electr. Dev. Society 1 92

    [14]

    Liu J, Guo F, Gao Y 2014 Acta Phys. Sin. 63 048501 (in Chinese) [刘静, 郭飞, 高勇 2014 物理学报 63 048501]

    [15]

    Peng C, Liu Q, Camillo C R, Liedy B, Adkisson J, Pekarik J, Gray P, Kaszuba P, Moszkowicz L, Zetterlund B, Macha K, Tallman K, Khater M, Harame D 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Portland, OR, United States, Sept. 30-Oct. 3, 2012 p1

    [16]

    Fox A, Heinemann B, Barth R, Marschmeyer S, Wipf C, Yamamoto Y 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Atlanta, GA, United States, Oct. 9-11, 2011 p70

    [17]

    Jagnnathan B, Khater M, Pagette F, Rieh J S, Angell D, Chen H, Florkey J, Golan F, Greenberg D R, Groves R, Jeng S J, Johnson J, Mengistu E, Schonenberg K T, Schnabel C M, Smith P, Stricker A, Ahlgren D, Freeman G, Stein K, Subbanna S 2002 IEEE Electr. Dev. Lett. 23 258

    [18]

    Jia X Z, Hu H Y, Zhang H M, Dai X Y 2005 Chin. Phys. 14 1439

    [19]

    Rieh J S, Greenberg D, KHater M, Schonenberg K T, Jeng S J, Pagette F, Adam T, Chinthakindi A, Florkey J, Jagannathan B, Johnson J, Krishnasamy R, Sanderson D, Schnabel C, Smith P, Stricker A, Sweeney S, Vaed K, Yanagisawa T, Ahlgren D, Stein K, Freeman G 2004 IEEE Radio Frequency Integrated Circuits Symposium, Hsinchu, China, June 6-8, 2004 p395

    [20]

    Chen W L, Chau H F, Tutt M, Ho M C, Kim T S, Henderson T 1997 IEEE Electr. Dev. Lett. 18 355

    [21]

    Yang Y, Tong X, Yang L T, Guo P F, Fan L, Yeo Y C 2010 IEEE Electr. Dev. Lett. 31 752

计量
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  • PDF下载量:  606
  • 被引次数: 0
出版历程
  • 收稿日期:  2014-03-26
  • 修回日期:  2014-04-25
  • 刊出日期:  2014-07-05

沟槽型发射极SiGe异质结双极化晶体管新结构研究

  • 1. 西安理工大学电子工程系, 西安 710048
    基金项目: 

    国家自然科学基金(批准号:61204094)、高等学校博士学科点专向科研基金(批准号:20106118120003)、陕西省工业攻关(批准号:2014K08-30)和陕西省教育厅科学研究计划(批准号:11JK0924)资助的课题.

摘要: 提出了一种沟槽型发射极SiGe异质结双极化晶体管新结构. 详细分析了新结构中沟槽型发射极的引入对器件性能的影响,并对其机理进行研究. 新型发射极结构通过改变发射极电流路径使电阻分区并联,在不增大结电容的前提下,有效减小发射极电阻,提高器件的频率特性. 结果表明,新结构器件的截止频率和最大振荡频率分别增加至100.2 GHz和134.4 GHz,更重要的是沟槽型发射极结构的引入,在提高器件频率特性的同时,不会降低器件的电流增益,也不会增加结电容,很好实现了频率特性、电流增益和结电容之间的折中. 对沟槽型发射极进行优化设计,改变侧墙高度和侧墙宽度. 沟槽型发射极电阻不受侧墙高度改变的影响,频率性能不变;侧墙宽度增加,频率性能降低.

English Abstract

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