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顶发射白光有机发光二极管(TEWOLED)在白光照明和全彩显示中有着良好的应用前景, 克服顶发射器件中的微腔效应是制备光电性能良好的TEWOLED的前提. 使用具有高折射率的ZnS作为增透膜改善金属阴极在蓝光波段的透射率,降低其反射性, 从而有效抑制了微腔的影响.同时利用转移矩阵理论和宽角干涉方法分别对阴极结构和 蓝光发光层位置进行了优化,最终获得了高效、色纯度良好、色度随视角变化小的TEWOLED. 最高亮度和效率分别达到9213 cd/m2和3 cd/A,色坐标位于白光区且接近白光等能点, 同时具有良好的视角稳定性,在060范围内色坐标仅变化(0.02, 0).Top-emitting white organic light-emitting diode (TEWOLED) has potential applications in lighting and full color displays. Microcavity effect in TEWOLED restrains the realization of the white emission with excellent optical and electric performances. In this paper, a ZnS film with a high refractive index used as a light outcoupling layer is introduced into the metal cathode to enhance its transmittivity to a maximal value in the blue light wavelength region. In addition, transfer matrix theory is utilized to optimize the thicknesses of the cathode and the ZnS outcoupling layer and the wide-angle interference is used to design the position of the blue emission layer inside the organic light-emitting diode. Based on the above work, the white light with relatively high luminous efficiency, good color purity, and small CIE coordinate change is acquired. The corresponding luminance and current efficicency are 9213 cd/m2 and 3 cd/A, respectively. The CIE coordinates belong to the white emission and are near the white light equal-energy point. The white emission also shows stable spectra with respect to the observation angle, with a limited CIE coordinate change of (0.02, 0) for a large observation angle change from 0 to 60.
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Keywords:
- white organic light-emitting diodes /
- top-emitting /
- light outcoupling layer /
- transfer matrix theory
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[1] Tang C W, Van Slyke S A 1987 Appl. Phys. Lett. 51 913
[2] Burroughes J H 1990 Nature 347 539
[3] Gustufsson G, Cao Y, Treacy G M, Klavetter F, Colaneri N, Heeger A J 1992 Nature 357 447
[4] Cao Y, Treacy G M, Smith P, Heeger A J 1992 Appl. Phys. Lett. 60 2711
[5] Gu G, Shen Z, Burrows P E, Forrest S R 1997 Adv. Mater. 9 725
[6] Yang Y, Chen S F, Xie J, Chen C Y, Shao M, Guo X, Huang W 2011 Acta Phys. Sin. 60 047809 (in Chinese) [杨洋, 陈淑芬, 谢军, 陈春燕, 邵茗, 郭旭, 黄维 2011 物理学报 60 047809]
[7] Xu X M, Peng J C, Li H J, Qu S, Zhao C J, Luo X H 2004 Acta Phys. Sin. 53 286 (in Chinese) [许雪梅, 彭景翠, 李宏建, 瞿述, 赵楚军, 罗小华 2004 物理学报 53 286]
[8] Kido J, Shionoya H, Nagai K 1995 Appl. Phys. Lett. 67 2281
[9] Feng J, Li F, Gao W B, Liu S Y, Liu Y, Wang Y 2001 Appl. Phys. Lett. 78 3947
[10] Chen S F, Wu Z J, Zhao Y, Li C N, Hou J Y, Liu S Y 2005 Org. Electron. 6 111
[11] Dodabalapur A, Rothberg L J, Miller T M 1994 Appl. Phys. Lett. 65 2308
[12] Parthasarathy G, Gu G, Forrest S R 1999 Adv. Mater. 11 907
[13] Riel H, Karg S, Beierlein T, Ruhstaller B, Rie\upbeta W 2003 Appl. Phys. Lett. 82 466
[14] Dobbertin T, Kroeger M, Heithecker D, Schneider D, Metzdorf D, Neuner H, Becker E, Johannes H H, Kowalsky W 2003 Appl. Phys. Lett. 82 284
[15] Chen S F, Deng L L, Xie J, Peng L, Xie L H, Fan Q L, Huang W 2010 Adv. Mater. 22 5227
[16] Kanno H, Sun Y R, Forrest S R 2005 Appl. Phys. Lett. 86 263502
[17] Hsu S F, Lee C C, Hwang S W, Chen C H 2005 Appl. Phys. Lett. 86 253508
[18] Zhu X L, Sun J X, Yu X M, Wong M, Kwok H S 2007 Jpn. J. Appl. Phys. 46 4054
[19] Lee M T, Tseng M R 2008 Curr. Appl. Phys. 8 616
[20] Kim M S, Jeon C H, Lim J T, Yeom G Y 2008 Thin Solid Films 11 3590
[21] Ji W Y, Zhang L T, Gao R X, Zhang L M, Xie W F, Zhang H Z, Li B 2008 Opt. Express 16 15489
[22] Thomschke M, Nitsche R, Furno M, Leo K 2009 Appl. Phys. Lett. 94 083303
[23] Ji W Y, Zhang L T, Zhang T Y, Xie W F, Zhang H Z 2010 Org. Electron. 11 202
[24] Xie G H, Zhang Z S, Xue Q, Zhang S M, Zhao L, Luo Y, Chen P, Quan B F, Zhao Y, Liu S Y 2010 Org. Electron. 11 2055
[25] Chen S M, Kwok H S 2011 Org. Electron. 12 677
[26] Ji W Y, Zhao J L, Sun Z C, Xie W F 2011 Org. Electron. 12 1137
[27] Ma J, Piao X C, Liu J, Zhang L T, Zhang T Y, Liu M, Li T, Xie W F, Cui H N 2011 Org. Electron. 12 923
[28] Chen S F, Xie W F, Meng Y L, Chen P, Zhao Y, Liu S Y 2008 J. Appl. Phys. 103 054506
[29] Sun Y, Noel C, Hiroshi K, Biwu M, Thompson M E, Forrest S R 2006 Nature 440 908
[30] Xie J, Chen C Y, Chen S F, Yang Y, Shao M, Guo X, Fan Q L, Huang W 2011 Org. Electron. 12 322
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