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Li Xiao-Long, Lu Wu, Wang Xin, Guo Qi, He Cheng-Fa, Sun Jing, Yu Xin, Liu Mo-Han, Jia Jin-Cheng, Yao Shuai, Wei Xin-Yu. Estimation of low-dose-rate degradation on bipolar linear circuits using different accelerated evaluation methods. Acta Physica Sinica,
2018, 67(9): 096101.
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Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Wang Zu-Jun, Liu Min-Bo, Liu Jing, Sheng Jiang-Kun, Dong Guan-Tao, Xue Yuan-Yuan. Radiation effect and degradation mechanism in 65 nm CMOS transistor. Acta Physica Sinica,
2018, 67(14): 146103.
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Liu Hai-Jun, Tian Xiao-Bo, Li Qing-Jiang, Sun Zhao-Lin, Diao Jie-Tao. Research on radiation damage in titanium oxide memristors by Monte Carlo method. Acta Physica Sinica,
2015, 64(7): 078401.
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Wang Yu-Zhen, Ma Ying, Zhou Yi-Chun. Molecular dynamics study of epitaxial compressive strain influence on the radiation resistance of BaTiO3 ferroelectrics. Acta Physica Sinica,
2014, 63(24): 246101.
doi: 10.7498/aps.63.246101
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Ma Wu-Ying, Wang Zhi-Kuan, Lu Wu, Xi Shan-Bin, Guo Qi, He Cheng-Fa, Wang Xin, Liu Mo-Han, Jiang Ke. The base current broadening effect and charge separation method of gate-controlled lateral PNP bipolar transistors. Acta Physica Sinica,
2014, 63(11): 116101.
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Wu Chuan-Lu, Ma Ying, Jiang Li-Mei, Zhou Yi-Chun, Li Jian-Cheng. Computer simulation of electric properties of metal-ferroelectric-substrate structured ferroelectric field effect transistor under ionizing radiation. Acta Physica Sinica,
2014, 63(21): 216102.
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Ma Wu-Ying, Lu Wu, Guo Qi, He Cheng-Fa, Wu Xue, Wang Xin, Cong Zhong-Chao, Wang Bo, Maria. Analyses of ionization radiation damage and dose rate effect of bipolar voltage comparator. Acta Physica Sinica,
2014, 63(2): 026101.
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Li Xing-Ji, Lan Mu-Jie, Liu Chao-Ming, Yang Jian-Qun, Sun Zhong-Liang, Xiao Li-Yi, He Shi-Yu. The influence of bias conditions on ionizing radiation damage of NPN and PNP transistors. Acta Physica Sinica,
2013, 62(9): 098503.
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Ma Guo-Liang, Li Xing-Ji, Liu Hai, Liu Chao-Ming, Yang Jian-Qun, He Shi-Yu. Effect of grain size on energy deposition process in Ni metal during 1 MeV electron irradiation. Acta Physica Sinica,
2013, 62(9): 091401.
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Sun Ya-Bin, Fu Jun, Xu Jun, Wang Yu-Dong, Zhou Wei, Zhang Wei, Cui Jie, Li Gao-Qing, Liu Zhi-Hong. Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates. Acta Physica Sinica,
2013, 62(19): 196104.
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Li Xing-Ji, Liu Chao-Ming, Sun Zhong-Liang, Lan Mu-Jie, Xiao Li-Yi, He Shi-Yu. Radiation damage induced by various particles on CC4013 devices. Acta Physica Sinica,
2013, 62(5): 058502.
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Gao Bo, Liu Gang, Wang Li-Xin, Han Zheng-Sheng, Zhang Yan-Fei, Wang Chun-Ling, Wen Jing-Chao. Research on the total dose effects for domestic VDMOS devices used in satellite. Acta Physica Sinica,
2012, 61(17): 176107.
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Lan Bo, Gao Bo, Cui Jiang-Wei, Li Ming, Wang Yi-Yuan, Yu Xue-Feng, Ren Di-Yuan. Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2011, 60(6): 068702.
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Wang Yi-Yuan, Lu Wu, Ren Di-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa, Gao Bo. Degradation and dose rate effects of bipolar linearregulator on ionizing radiation. Acta Physica Sinica,
2011, 60(9): 096104.
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Fan Long, Hao Yue. The effect of radiation induced strain relaxation on electric performance of AlmGa1－mN/GaN HEMT. Acta Physica Sinica,
2007, 56(6): 3393-3399.
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He Bao-Ping, Chen Wei, Wang Gui-Zhen. A comparison of ionizing radiation damage in CMOS devices from 60Co Gamma rays, electrons and protons. Acta Physica Sinica,
2006, 55(7): 3546-3551.
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Meng Kang, Jiang Sen-Lin, Hou Li-Na, Li Chan, Wang Kun, Ding Zhi-Bo, Yao Shu-De. Study of radiation damage in Mg+-implanted GaN. Acta Physica Sinica,
2006, 55(5): 2476-2481.
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He Bao-Ping, Guo Hong-Xia, Gong Jian-Cheng, Wang Gui-Zhen, Luo Yin-Hong, Li Yong-Hong. Prediction of failure time for floating gate ROM devices at low dose rate in space radiation environment. Acta Physica Sinica,
2004, 53(9): 3125-3129.
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He Bao-Ping, Wang Gui-Zhen, Zhou Hui, Gong Jian-Cheng, Luo Yin-Hong, Jiang Jing-He. Predicting NMOS device radiation response at different dose rates in γ-ray environment. Acta Physica Sinica,
2003, 52(1): 188-191.
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MU WEI-BING, CHEN PAN-XUN. MONTE-CARLO CALCULATION OF X-RAY DOSE ENHANCEMENT FACTOR NEARBY HIGH Z METAL CONNECTED INTERFACE. Acta Physica Sinica,
2001, 50(2): 189-192.
doi: 10.7498/aps.50.189
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