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2021, 70(16): 166101.
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2020, 69(7): 078501.
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2018, 67(14): 146103.
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Hao Min-Ru, Hu Hui-Yong, Liao Chen-Guang, Wang Bin, Zhao Xiao-Hong, Kang Hai-Yang, Su Han, Zhang He-Ming. Influence of -ray total dose radiation effect on the tunneling gate current of the uniaxial strained Si nanometer n-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2017, 66(7): 076101.
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Liu Hai-Jun, Tian Xiao-Bo, Li Qing-Jiang, Sun Zhao-Lin, Diao Jie-Tao. Research on radiation damage in titanium oxide memristors by Monte Carlo method. Acta Physica Sinica,
2015, 64(7): 078401.
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2014, 63(21): 216102.
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2013, 62(5): 058502.
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2012, 61(1): 016106.
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Shang Huai-Chao, Liu Hong-Xia, Zhuo Qing-Qing. Degradation mechanism of SOI NMOS devices exposed to 60Co γ-ray at low dose rate. Acta Physica Sinica,
2012, 61(24): 246101.
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2012, 61(17): 176107.
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2011, 60(9): 096104.
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2011, 60(5): 056105.
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He Bao-Ping, Yao Zhi-Bin. Research on prediction model of radiation effect for complementary metal oxide semiconductor devices at low dose rate irradiation in space environment. Acta Physica Sinica,
2010, 59(3): 1985-1990.
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Zheng Yu-Zhan, Lu Wu, Ren Di-Yuan, Wang Yi-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa. Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas. Acta Physica Sinica,
2009, 58(8): 5572-5577.
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2006, 55(7): 3546-3551.
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2006, 55(5): 2476-2481.
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MU WEI-BING, CHEN PAN-XUN. MONTE-CARLO CALCULATION OF X-RAY DOSE ENHANCEMENT FACTOR NEARBY HIGH Z METAL CONNECTED INTERFACE. Acta Physica Sinica,
2001, 50(2): 189-192.
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2001, 50(12): 2434-2438.
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