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Transient characteristics simulation of total ionizing dose effect on Si n-metal-oxide-semiconductor field effect transistor under different gate voltage

Zhang Lin Ma Lin-Dong Du Lin Li Yan-Bo Xu Xian-Feng Huang Xin-Rong

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Transient characteristics simulation of total ionizing dose effect on Si n-metal-oxide-semiconductor field effect transistor under different gate voltage

Zhang Lin, Ma Lin-Dong, Du Lin, Li Yan-Bo, Xu Xian-Feng, Huang Xin-Rong
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  • Abstract views:  2723
  • PDF Downloads:  60
  • Cited By: 0
Publishing process
  • Received Date:  15 February 2023
  • Accepted Date:  05 May 2023
  • Available Online:  06 May 2023
  • Published Online:  05 July 2023

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