TIGHT-BINDING CALCULATION FOR GaAs (110) SURFACE

XU YONG-NIAN

doi:10.7498/aps.30.1400

Abstract
In the present work, the tight-binding calculation for the rotational relaxed GaAs (110) surface is studied. In order to simulate the semi-infinite crystal, a saturating slab model is adopted with the last layer of which being saturated by some quasi As and Ga atoms, so that the slab model can be considered as having one surface only. The LDOS thus obtained agrees well with that given by the conventional slab model.
Authors and contacts
XU YONG-NIAN

1.
复旦大学物理系
References

Cited By

[1]	Cui Yang, Li Jing, Zhang Lin. Electronic structure of graphene nanoribbons under external electric field by density functional tight binding. Acta Physica Sinica, 2021, 70(5): 053101. doi: 10.7498/aps.70.20201619
[2]	Mei Yu-Han, Shao Yue, Hang Zhi-Hong. Microwave experimental platform to demonstrate topology physics based on tight-binding model. Acta Physica Sinica, 2019, 68(22): 227803. doi: 10.7498/aps.68.20191452
[3]	Xin Wang, Wu Reng-Lai, Xue Hong-Jie, Yu Ya-Bin. Plasmonic excitations in mesoscopic-sized atomic chains：a tight-binding model. Acta Physica Sinica, 2013, 62(17): 177301. doi: 10.7498/aps.62.177301
[4]	Hu Hai-Xin, Zhang Zhen-Hua, Liu Xin-Hai, Qiu Ming, Ding Kai-He. Tight binding studies on the electronic structure of graphene nanoribbons. Acta Physica Sinica, 2009, 58(10): 7156-7161. doi: 10.7498/aps.58.7156
[5]	Cai Xu-Hong, Lin Xu-Sheng, Shi Quan, Zhao Nian-Shun. Resonant frequency shift in coupled photonic crystal defects described by the tight-binding method. Acta Physica Sinica, 2007, 56(5): 2742-2746. doi: 10.7498/aps.56.2742
[6]	Dai Jia-Yu, Zhang Dong-Wen, Yuan Jian-Min. Reconfiguration of GaAs(110) surface with the adsorption of Xe atoms. Acta Physica Sinica, 2006, 55(11): 6073-6079. doi: 10.7498/aps.55.6073
[7]	Wang JianWang, Shao-Qing. Tight-binding molecular-dynamics study of melting behaviour of small silicon clu sters. Acta Physica Sinica, 2003, 52(11): 2854-2858. doi: 10.7498/aps.52.2854
[8]	PAN BI-CAI. TIGHT-BINDING POTENTIAL WITH CORRECTION OF BONDING ENVIRONMENT FOR SILICON-HYDROGEN. Acta Physica Sinica, 2001, 50(2): 268-272. doi: 10.7498/aps.50.268
[9]	Fa Wei, Luo Cheng-lin. . Acta Physica Sinica, 2000, 49(3): 430-434. doi: 10.7498/aps.49.430
[10]	Luo Cheng－lin, Zhou Yan－huai, Zhang Yi. Structure Simulation of Nickel Clusters by Transferable Tight－Binding Potential. Acta Physica Sinica, 2000, 49(1): 54-56. doi: 10.7498/aps.49.54
[11]	WANG XIAO, CAI JIAN-HUA. PLASMON THEORY OF THREE-DIMENSIONAL TIGHT-BINDING ELECTRON GAS. Acta Physica Sinica, 1993, 42(7): 1149-1156. doi: 10.7498/aps.42.1149
[12]	QIAO HAO, ZHANG KAI-MING. ADSORPTION OF ALKALI METAL ON GaAs(110) SURFACE. Acta Physica Sinica, 1991, 40(11): 1840-1845. doi: 10.7498/aps.40.1840
[13]	Wang Xiao;Cai Jiang-hua. PLASMON THEORY OF THREE-DIMENSIONAL TIGHT-BINDING ELECTRON GAS. Acta Physica Sinica, 1991, 40(7): 1149-1156. doi: 10.7498/aps.40.1149
[14]	ZHANG YONG, ZHENG JIAN-SHENG, WU BO-XI. THEORETICAL INVESTIGATION ON THE PRESSURE BEHA-VIOR OF NITROGEN BOUND EXCITONS IN GaP AND GaAs1-xPx. Acta Physica Sinica, 1991, 40(8): 1329-1338. doi: 10.7498/aps.40.1329
[15]	LAN TIAN, XU FEI-YUE. A STUDY OF GaAs(110) SURFACE RELAXATION WITH LOW-ENERGY-ELECTRON-DIFFRACTION. Acta Physica Sinica, 1989, 38(3): 357-365. doi: 10.7498/aps.38.357
[16]	ZHANG ZHAO-QING. AN ALTERNATIVE DERIVATION OF COHERENT-POTENTIAL APPROXIMATION FOR DISORDERED ALLOYS-TIGHT BINDING MODEL. Acta Physica Sinica, 1982, 31(3): 285-293. doi: 10.7498/aps.31.285
[17]	XIONG SHI-JIE, CAI JIAN-HUA. A TIGHT-BINDING CALCULATION OF ELECTRONIC STATES OF LAYERED ULTRA-THIN COHERENT STRUCTURES. Acta Physica Sinica, 1982, 31(4): 474-484. doi: 10.7498/aps.31.474
[18]	ZHANG KAI-MING, YE LING. THE CHEMISORPTION OF CI ON THE GaAs(110) SURFACE. Acta Physica Sinica, 1981, 30(8): 1117-1121. doi: 10.7498/aps.30.1117
[19]	ZHANG KAI-MING, YE LING. THE CHEMISORPTION OF AI ON THE GaAs(110) SURFACE. Acta Physica Sinica, 1980, 29(12): 1613-1616. doi: 10.7498/aps.29.1613
[20]	ZHANG KAI-MING, YE LING. THE SURFACE STRUCTURE OF GaAs(110). Acta Physica Sinica, 1980, 29(6): 686-692. doi: 10.7498/aps.29.686

Catalog

Vol. 30, Issue 10 - 1981-05-20

Metrics

Abstract views: 8620
PDF Downloads: 573
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板

TIGHT-BINDING CALCULATION FOR GaAs (110) SURFACE

Abstract

Authors and contacts

References

Cited By

Catalog

Metrics

Authors

Referees

About Journal

About

Search

Article

留言板

TIGHT-BINDING CALCULATION FOR GaAs (110) SURFACE

Abstract

Authors and contacts

References

Cited By

Catalog

Metrics

Publishing process

Authors

Referees

About Journal

About