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Jia Xiao-Fei, Wei Qun, Zhang Wen-Peng, He Liang, Wu Zhen-Hua. Analysis of thermal noise characteristics in 10 nm metal oxide semiconductor field effect transistor. Acta Physica Sinica,
2023, 72(22): 227303.
doi: 10.7498/aps.72.20230661
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Wang Zheng-Yu, Huang Fei, Xue Run-Yu, Wang Zheng-Ling. Perfect absorption of symmetric grating structure based on the continuous metal film. Acta Physica Sinica,
2023, 72(5): 054201.
doi: 10.7498/aps.72.20221701
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Wu Wen-Zhi, Gao Lai-Xu, Kong De-Gui, Gao Yang, Ran Ling-Ling, Chai Zhi-Jun. Thermal effect of translucent gold nanofilm based on transient reflection/transmission technique. Acta Physica Sinica,
2016, 65(4): 046801.
doi: 10.7498/aps.65.046801
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Yang Min-Yu, Song Jian-Jun, Zhang Jing, Tang Zhao-Huan, Zhang He-Ming, Hu Hui-Yong. Physical mechanism of uniaxial strain in nano-scale metal oxide semiconductor transistor caused by sin film. Acta Physica Sinica,
2015, 64(23): 238502.
doi: 10.7498/aps.64.238502
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Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Song Jian-Jun, Zhou Chun-Yu, Li Yu-Chen. Study on gate capacitance-voltage characteristics of strained-SiGe pMOSFET. Acta Physica Sinica,
2013, 62(12): 127102.
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Bai Xian-Chen, Zhang Jian-De, Yang Jian-Hua. Influence of the washer-rod structure on high frequency characteristics of wide-gap klystron cavity. Acta Physica Sinica,
2013, 62(2): 024102.
doi: 10.7498/aps.62.024102
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Liu Ning, Zhang Xin-Ping, Dou Fei. Heterojunction structure forming in the polymer film doped with small-molecule organic semiconductors. Acta Physica Sinica,
2012, 61(2): 027201.
doi: 10.7498/aps.61.027201
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Wang Si-Hao, Lu Qing, Wang Wen-Hua, An Xia, Huang Ru. The improvement on total ionizing dose (TID) effects of the ultra-deep submicron MOSFET featuring delta doping profiles. Acta Physica Sinica,
2010, 59(3): 1970-1976.
doi: 10.7498/aps.59.1970
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Liu Yong-Sheng, Yang Wen-Hua, Zhu Yan-Yan, Chen Jing, Yang Zheng-Long, Yang Jin-Huan. Design of new nano anti-reflection coating for space silicon solar cells. Acta Physica Sinica,
2009, 58(7): 4992-4996.
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Cheng Xing-Wang, Li Xiang, Gao Yuan-Ling, Yu Zhou, Long Xue, Liu Ying. Synthesis and magnetic, optical properties of Co doped ZnO room-temperature ferromagnetic semiconductor. Acta Physica Sinica,
2009, 58(3): 2018-2022.
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Liu Si-Ping, Zhang Yu-Chi, Zhang Peng-Fei, Li-Gang, Wang Jun-Min, Zhang Tian-Cai. Experimental study on the properties of the AR-coated external cavity diode lasers. Acta Physica Sinica,
2009, 58(1): 285-289.
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Hua Lei, Song Guo-Feng, Guo Bao-Shan, Wang Wei-Min, Zhang Yu. Enhanced mid-infrared transmission in heavily doped n-type semiconductor film based on surface plasmons. Acta Physica Sinica,
2008, 57(11): 7210-7215.
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Ma Jian-Hua, Sun Jing-Lan, Meng Xiang-Jian, Lin Tie, Shi Fu-Wen, Chu Jun-Hao. Dielectric and interface characteristics of SrTiO3 with a MIS structure. Acta Physica Sinica,
2005, 54(3): 1390-1395.
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Wu Yue, Huang Han, Mao Hong-Ying, Yang Xin-Guo, Zhang Jian-Hua, Wang Mang, Li Hai-Yang, He Pi-Mo, Bao Shi-Ning. Study on the interface of an organic semiconductor grown on Ru(0001) surface. Acta Physica Sinica,
2004, 53(5): 1604-1610.
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Tan Chun-Lei, Yi Yong-Xiang, Wang Gu-Peng. . Acta Physica Sinica,
2002, 51(5): 1063-1067.
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LI YAN, HE DA-REN. DESIGN OF A KIND OF FRACTAL FILM SETS WITH LOW-REFLECTION. Acta Physica Sinica,
2000, 49(11): 2171-2175.
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WANG MAO-XIANG, YU JIAN-HUA, SUN CHENG-XIU, WU ZONG-HAN. NEGATIVE RESISTANCE PHENOMENON AND LIGHT EMISSION PROPERTY OF THE METAL-INSULATOR-SEMICONDUCTOR (Au-SiO2-Si) TUNNEL JUNCTION. Acta Physica Sinica,
2000, 49(6): 1159-1162.
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LIU LI-YING, WANG GONG-MING, LU XING-ZE, ZHENG JIA-BIAO, WANG WEN-CHENG. MULTIPLE REFLECTION CORRECTION IN TRANSMITTED-SECOND HARMONIC GENERATION OF STILBAZIUM-SALT LANGMUIR-BLODGETT MONOLAYERS. Acta Physica Sinica,
1997, 46(1): 78-86.
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ZHAO ZI-QIANG, WEI LUN-CUN, WANG HAO, ZHANG JIN-HONG, ZHONG YUN-CHENG, LU XI-TING. THE PREPARATION AND MICROSTRUCTURE STUDY OF NANO METAL-SEMICONDUCTOR FILM Cu∶CdS. Acta Physica Sinica,
1997, 46(5): 878-882.
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. ИССЛЕДОВАНИЕ 30ННОЙ СТРУКТУРЫ ПОЛУПРОВОДНКИОВ СТИЛАМИ АЛМА3А И ЦИНКА ОБМАНКИ И3 ФУНДАМЕН-ТАЛЬНЫХ СПЕКТРОВ ОТРАЖЕНИЯ. Acta Physica Sinica,
1966, 22(9): 982-1003.
doi: 10.7498/aps.22.982
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