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The gate capacitance-voltage (C-V) characteristic of strained SiGe pMOSFET is very different from that of bulk Si pMOSFET, and can be strongly affected by the channel doping. In this paper, we first study the formation mechanism of the "plateau" which can be observed in the gate C-V characteristics of strained SiGe pMOSFET, and then present a physics based analytical model to predict the gate C-V characteristic of strained SiGe pMOSFET. It is found that this plateau is channel doping dependent. The results from the model are compared with the experimental results and they are found to be in excellent agreement with each other, giving the evidence for its validity.
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Keywords:
- strained SiGe pMOSFET /
- gate C-V characteristics /
- plateau /
- channel doping
[1] Wang B, Zhang H M, Hu H Y, Zhang Y M, Shu B, Zhou C Y, Li Y C, L Y 2013 Acta Phys. Sin. 62 057103 (in Chinese) [王斌, 张鹤鸣, 胡辉勇, 张玉明, 舒斌, 周春宇, 李妤晨, 吕懿 2013 物理学报 62 057013]
[2] Hu H Y, Zhang H M, Dai X Y, L Y, Shu B, Wang W, Jiang T, Wang X Y 2004 Acta Phys. Sin. 53 4314 (in Chinese) [胡辉勇, 张鹤鸣, 戴显英, 吕懿, 舒斌, 王伟, 姜涛, 王喜媛 2004 物理学报 53 4314]
[3] Hoyt J L, Nayfeh H M, Eguchi S, Aberg I, Xia G, Drake T, Fitzgerald E A 2002 IEDM Tech. Dig. 20 23
[4] Jiang T, Zhang H M, Wang W, Hu H Y, Dai X Y 2006 Chin. Phys. 15 1339
[5] Haizhou Y, Hobart K D, Peterson R L, Kub F J, Sturm J C 2005 IEEE Trans. Electron Dev. 52 2207
[6] Nayak D K, Woo J C S, Park J S, Wang K L, Macwilliams K P 1991 IEEE Electron Dev. Lett. 12 154
[7] Bindu B, DasGupta N, DasGupta A 2006 IEEE Trans. Electron Dev. 53 1411
[8] Lukic P M, Ramovic R M, Sasic R M 2006 25th International Conference on Microelectronics, Belgrade, May 14-17, 2006 p472
[9] Fiorenza J G, Park J S, Lochtefeld A 2008 IEEE Trans. Electron Dev. 55 640
[10] Qin S S, Zhang H M, Hu H Y, Dai X Y, Xuan R X, Shu B 2010 Chin. Phys. B 19 117309
[11] Voinigescu S P, Iniewski K, Lisak R, Salama T, Noel J P, Houghton D C 1994 Solid State Electron. 37 1491
[12] Pham A T, Jungemann C, Meinerzhagen B 2010 40th European Solid State Device Research Conference, Spain, Sep. 14-16, 2010 p230
[13] Yang Z, Wang C, Wang H T, Hu W D, Yang Y 2011 Acta Phys. Sin. 60 077102 (in Chinese) [扬洲, 王茺, 王洪涛, 胡伟达, 杨宇2011 物理学报 60 077102]
[14] Wei J Y, Maikap S, Lee M H, Lee C C, Liu C W 2006 Solid State Electron 50 109
[15] Bindu B, DasGupta N, DasGupta A 2007 IEEE Trans. Electron Dev. 54 1889
[16] Wang B, Zhang H M, Hu H Y, Zhang Y M, Zhou C Y, Wang G Y, Li Y C 2013 Chin. Phys. B 22 028503
[17] Qu J T, Zhang H M, Wang G Y, Wang X Y, Hu H Y 2011 Acta Phys. Sin. 60 058502 (in Chinese) [区江涛, 张鹤鸣, 王冠宇, 王晓燕, 胡辉勇 2011 物理学报 60 058502]
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[1] Wang B, Zhang H M, Hu H Y, Zhang Y M, Shu B, Zhou C Y, Li Y C, L Y 2013 Acta Phys. Sin. 62 057103 (in Chinese) [王斌, 张鹤鸣, 胡辉勇, 张玉明, 舒斌, 周春宇, 李妤晨, 吕懿 2013 物理学报 62 057013]
[2] Hu H Y, Zhang H M, Dai X Y, L Y, Shu B, Wang W, Jiang T, Wang X Y 2004 Acta Phys. Sin. 53 4314 (in Chinese) [胡辉勇, 张鹤鸣, 戴显英, 吕懿, 舒斌, 王伟, 姜涛, 王喜媛 2004 物理学报 53 4314]
[3] Hoyt J L, Nayfeh H M, Eguchi S, Aberg I, Xia G, Drake T, Fitzgerald E A 2002 IEDM Tech. Dig. 20 23
[4] Jiang T, Zhang H M, Wang W, Hu H Y, Dai X Y 2006 Chin. Phys. 15 1339
[5] Haizhou Y, Hobart K D, Peterson R L, Kub F J, Sturm J C 2005 IEEE Trans. Electron Dev. 52 2207
[6] Nayak D K, Woo J C S, Park J S, Wang K L, Macwilliams K P 1991 IEEE Electron Dev. Lett. 12 154
[7] Bindu B, DasGupta N, DasGupta A 2006 IEEE Trans. Electron Dev. 53 1411
[8] Lukic P M, Ramovic R M, Sasic R M 2006 25th International Conference on Microelectronics, Belgrade, May 14-17, 2006 p472
[9] Fiorenza J G, Park J S, Lochtefeld A 2008 IEEE Trans. Electron Dev. 55 640
[10] Qin S S, Zhang H M, Hu H Y, Dai X Y, Xuan R X, Shu B 2010 Chin. Phys. B 19 117309
[11] Voinigescu S P, Iniewski K, Lisak R, Salama T, Noel J P, Houghton D C 1994 Solid State Electron. 37 1491
[12] Pham A T, Jungemann C, Meinerzhagen B 2010 40th European Solid State Device Research Conference, Spain, Sep. 14-16, 2010 p230
[13] Yang Z, Wang C, Wang H T, Hu W D, Yang Y 2011 Acta Phys. Sin. 60 077102 (in Chinese) [扬洲, 王茺, 王洪涛, 胡伟达, 杨宇2011 物理学报 60 077102]
[14] Wei J Y, Maikap S, Lee M H, Lee C C, Liu C W 2006 Solid State Electron 50 109
[15] Bindu B, DasGupta N, DasGupta A 2007 IEEE Trans. Electron Dev. 54 1889
[16] Wang B, Zhang H M, Hu H Y, Zhang Y M, Zhou C Y, Wang G Y, Li Y C 2013 Chin. Phys. B 22 028503
[17] Qu J T, Zhang H M, Wang G Y, Wang X Y, Hu H Y 2011 Acta Phys. Sin. 60 058502 (in Chinese) [区江涛, 张鹤鸣, 王冠宇, 王晓燕, 胡辉勇 2011 物理学报 60 058502]
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