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Geng Xin, Zhang Jie-Yin, Lu Wen-Long, Ming Ming, Liu Fang-Ze, Fu Bin-Xiao, Chu Yi-Xin, Yan Mou-Hui, Wang Bao-Chuan, Zhang Xin-Ding, Guo Guo-Ping, Zhang Jian-Jun. Epitaxy and characterization of undoped Si/SiGe heterojunctions. Acta Physica Sinica,
2024, 73(11): 117302.
doi: 10.7498/aps.73.20240310
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Shi Kai-Ju, Li Rui, Li Chang-Fu, Wang Cheng-Xin, Xu Xian-Gang, Ji Zi-Wu. Luminescence measurement of band gap. Acta Physica Sinica,
2022, 71(6): 067803.
doi: 10.7498/aps.71.20211894
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Feng Song, Xue Bin, Li Lian-Bi, Zhai Xue-Jun, Song Li-Xun, Zhu Chang-Jun. Analysis of Si/SiGe/Si double heterojunction band of a novelstructure of PIN electronic modulation. Acta Physica Sinica,
2016, 65(5): 054201.
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Liu Chao, Wei Zhi-Peng, An Ning, He Bin-Tai, Liu Peng-Cheng, Liu Guo-Jun. Calculation methods of InGaAsSb quaternary alloy band gap. Acta Physica Sinica,
2014, 63(24): 248102.
doi: 10.7498/aps.63.248102
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Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Song Jian-Jun, Zhou Chun-Yu, Li Yu-Chen. Study on physical model for strained Si MOSFET with hetero-polycrystalline SiGe gate. Acta Physica Sinica,
2013, 62(21): 218502.
doi: 10.7498/aps.62.218502
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Ding Wen-Ge, Sang Yun-Gang, Yu Wei, Yang Yan-Bin, Teng Xiao-Yun, Fu Guang-Sheng. Current transport mechanism in silicon-rich silicon nitride/c-Si heterojunction. Acta Physica Sinica,
2012, 61(24): 247304.
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Pu Chun-Ying, Li Hong-Jing, Tang Xin, Zhang Qing-Yu. Optical properties of N-doped Cu2O films and relevant analysis with first-principles calculations. Acta Physica Sinica,
2012, 61(4): 047104.
doi: 10.7498/aps.61.047104
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Wu Li-Hua, Zhang Xiao-Zhong, Yu Yi, Wan Cai-Hua, Tan Xin-Yu. Photovoltaic effect of a-C: Fe/AlOx /Si based heterostructures. Acta Physica Sinica,
2011, 60(3): 037807.
doi: 10.7498/aps.60.037807
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Hu Hui-Yong, Shu Yu, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Qing Shan-Shan, Qu Jiang-Tao. Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layer. Acta Physica Sinica,
2011, 60(1): 017303.
doi: 10.7498/aps.60.017303
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Miao Rui-Xia, Zhang Yu-Ming, Tang Xiao-Yan, Zhang Yi-Men. Investigation of luminescence properties of basal plane dislocations in 4H-SiC. Acta Physica Sinica,
2011, 60(3): 037808.
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Zhong Chun-Liang, Geng Kui-Wei, Yao Ruo-He. S-shaped J-V characteristic of a-Si:H/c-Si heterojunction solar cell. Acta Physica Sinica,
2010, 59(9): 6538-6544.
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Zhao Lei, Zhou Chun-Lan, Li Hai-Ling, Diao Hong-Wei, Wang Wen-Jing. Optimizing polymorphous silicon back surface field of a-Si(n)/c-Si(p) heterojunction solar cells by simulation. Acta Physica Sinica,
2008, 57(5): 3212-3218.
doi: 10.7498/aps.57.3212
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Zhou Jun, Fang Qing-Qing, Wang Bao-Ming, Liu Yan-Mei, Li Mao, Yan Fang-Liang, Wang Sheng-Nan. Effect of annealing and Mg content on the microstructure and optical properties of Zn1-xMgxO films. Acta Physica Sinica,
2008, 57(10): 6614-6619.
doi: 10.7498/aps.57.6614
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Shu Bin, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying. Mathematical model of DC characteristic of SiGe charge injection transistors. Acta Physica Sinica,
2007, 56(2): 1105-1109.
doi: 10.7498/aps.56.1105
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Li Hui, Xie Er-Qing, Zhang Hong-Liang, Pan Xiao-Jun, Zhang Yong-Zhe. Optical properties of ZnO and MgxZn1-xO nanoparticles prepared by flame spray synthesis. Acta Physica Sinica,
2007, 56(6): 3584-3588.
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Jin Xi-Lian, Lou Shi-Yun, Kong De-Guo, Li Yun-Cai, Du Zu-Liang. Investigation on the broadening of band gap of wurtzite ZnO by Mg-doping. Acta Physica Sinica,
2006, 55(9): 4809-4815.
doi: 10.7498/aps.55.4809
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Hu Zhi-Hua, Liao Xian-Bo, Zeng Xiang-Bo, Xu Yan-Yue, Zhang Shi-Bin, Diao Hong-Wei, Kong Guang-Lin. Numerical simulation of nc-Si:H/ c-Si heterojunction solar cells. Acta Physica Sinica,
2003, 52(1): 217-224.
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WANG SHAO-WEI, LU WEI, WANG HONG, WANG DONG, WANG MIN, SHEN XUE-CHU. C-V CHARACTERISTICS OF Bi2Ti2O7 THIN FILMS ON n-Si(100). Acta Physica Sinica,
2001, 50(12): 2461-2465.
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2000, 49(12): 2466-2471.
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PENG CHENG, SHENG CHI, SUN HENG-HUI. NEW C-V CHARACTERISTIC OF Si pn DIODES PREPARED BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica,
1988, 37(6): 1025-1029.
doi: 10.7498/aps.37.1025
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