Epitaxy and characterization of undoped Si/SiGe heterojunctions

Geng Xin; Zhang Jie-Yin; Lu Wen-Long; Ming Ming; Liu Fang-Ze; Fu Bin-Xiao; Chu Yi-Xin; Yan Mou-Hui; Wang Bao-Chuan; Zhang Xin-Ding; Guo Guo-Ping; Zhang Jian-Jun

doi:10.7498/aps.73.20240310

Abstract

Silicon-based semiconductor quantum computing with spin as the encoding unit is compatible with traditional microelectronic processes, easy to expand, and can improve isotope purification and decoherence time, thus attracting much attention. There are fewer reports on the work related to undoped Si/SiGe heterostructures grown by molecular beam epitaxy than those on chemical vapor deposition. An undoped Si/SiGe heterostructure is grown by molecular beam epitaxy (see the attached figure below). The results from scanning transmission electron microscopy and energy-dispersive spectroscopy mapping show an atomic-scale interface with a characteristic length of 0.53 nm. The surface root-mean-square roughness measured by atomic force microscope is 0.44 nm. The X-ray diffraction data show that the Si quantum well is fully strained and the in-plane strain is 1.03%. In addition, the performance of the two-dimensional electron gas is evaluated by low-temperature Hall measurements, which are conducted in the Hall-bar shaped field-effect transistor. The peak mobility is 20.21×10⁴ cm²·V^–1·s^–1 when the carrier density is about 6.265×10¹¹ cm^–2 at 250 mK. The percolation density is 1.465×10¹¹ cm^–2. The effective mass of the two-dimensional electron gas is approximately 0.19m₀. The power exponential between carrier density and mobility at different gate voltages is 1.026, and the Dingle ratio of the two-dimensional electron gas is in a range of 7–12, indicating that the electrons are scattered by background impurities and semiconductor/oxide interfaces charges. The atomically sharp interface of Si/SiGe heterostructures created by molecular beam epitaxy is beneficial for studying the valley physics properties in silicon. The structural and transport characterizations in this paper lay the foundation for the optimization of Si-based semiconductor quantum dot quantum computing materials.

Keywords:

Authors and contacts

1.
School of Physics, South China Normal University, Guangzhou 510631, China
2.
Center for Semiconductor Heterogeneous Materials and Devices, SongShan Lake Materials Laboratory, Dongguan 523830, China
3.
CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
4.
Key Laboratory for Condensed Matter Physics, Institute of Physics Chinese Academy of Sciences, Beijing 100190, China
5.
College of Sciences, Shanghai University, Shanghai 200444, China

Corresponding author: Zhang Jie-Yin, zhangjieyin@sslab.org.cn ; Zhang Xin-Ding, xdzhang@scnu.edu.cn ; Zhang Jian-Jun, jjzhang@iphy.ac.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 92165207, 62225407, 12304100), the Songshan Lake Materials Laboratory, China (Grant No. XMYS2023002), and the Innovation Program for Quantum Science and Technology, China (Grant No. 2021ZD0302300).

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References

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Cited By

图 1 (a) 硅基Si/SiGe异质结结构示意图; (b) MBE 制备SiGe/Si QW/SiGe/Si 结构的 STEM-HAADF图; (c), (d) 量子阱附近Si, Ge元素的EDS谱; (e) SiGe/Si/SiGe 高倍STEM-HAADF图像; (f) Si 量子阱上界面的STEM-HAADF原子图像

Figure 1. (a) Schematic of Si/SiGe heterostructure on Si (001); (b) STEM-HAADF of SiGe/Si QW/SiGe/Si heterostructure grown by MBE; (c), (d) EDS of Si and Ge distribution around quantum well; (e) magnified STEM-HADDF of SiGe/Si/SiGe; (f) atomic-scale STEM-HADDF image of the Si/SiGe interface.

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图 2 (a) 样品表面的原子力显微镜图像; (b) ($ \bar{2}, \bar{2},4 $)方向XRD-RSM图

Figure 2. (a) Surface morphology of the heterostructure measured by AFM; (b) RSM around the asymmetric ($ \bar{2}, \bar{2},4 $) direction of the heterostructure.

DownLoad: Full-Size Img PowerPoint

图 3 (a) 霍尔器件的光显图和截面示意图; (b) 载流子浓度和载流子迁移率随栅极电压变化的曲线; (c) 载流子迁移率与载流子浓度的对应关系曲线; (d) 纵向电导率随载流子浓度变化的关系(虚线是根据渗透理论拟合的曲线); (e) 栅极电压为2 V时的纵向电阻率和横向电阻率随磁场的变化

Figure 3. (a) Optical microscope diagram and cross-sectional schematic view of Hall device; (b) carrier density and mobility as a function of the gate voltage V_g; (c) density-dependent mobility; (d) density-dependent conductivity, the dashed line is a fit based on the percolation theory; (e) transverse Hall resistivity and longitudinal resistivity as a function of the magnetic field.

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图 4 (a) 不同温度下SdH振荡曲线; (b) 不同温度下去除噪音的SdH振荡曲线; (c) Δρ_xx/Δρ₀在不同磁场强度下随温度的变换曲线; (d) 不同载流子浓度下有效质量m^*随磁场B的变化

Figure 4. (a) Longitudinal resistivity as a function of magnetic field for different temperatures; (b) oscillation amplitude of the longitudinal resistivity as a function of the magnetic field; (c) Δρ_xx/Δρ₀ for different temperatures, different colors represent different magnetic fields from 0.55 T to 0.82 T, dashed lines are the fits for extracting effective mass; (d) effective mass as a function of the magnetic field at various densities.

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图 5 (a) 不同载流子浓度下的Sdh振荡曲线; (b) 不同载流子浓度下$\ln \Big(\dfrac{\Delta \rho_{xx} {\rm sinh}(\alpha T_0)}{\alpha T_0}\Big) $随1/B的变化曲线; (c) 量子寿命τ_q, τ_t随着载流子浓度变化的曲线; (d) 丁格比(τ_q/τ_t)随载流子浓度的变化曲线

Figure 5. (a) Longitudinal resistivity as a function of magnetic field under various carrier densities; (b) the variation curve of $\ln \Big(\dfrac{\Delta \rho_{xx} {\rm sinh}(\alpha T_0)}{\alpha T_0}\Big) $ with 1/B under different carrier densities; (c) τ_q and τ_t at different carrier densities; (d) carrier density-dependent Dingle plot (τ_q/τ_t).

DownLoad: Full-Size Img PowerPoint

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[1]	王宁, 王保传, 郭国平 2022 物理学报 71 230301 Google Scholar Wang N, Wang B C, Guo G P 2022 Acta Phys. Sin. 71 230301 Google Scholar
[2]	Zhang J J, Li H O, Guo G P 2024 Sci. Sin. Inf. 54 102 Google Scholar
[3]	张结印, 高飞, 张建军 2021 物理学报 70 217802 Google Scholar Zhang J Y, Gao F, Zhang J J 2021 Acta Phys. Sin. 70 217802 Google Scholar
[4]	Petta J, Johnson A, Taylor J, Laird E, Yacoby A, Lukin M, Marcus C, Hanson M, Gossard A 2005 Science 309 2180 Google Scholar
[5]	Yoneda J, Otsuka T, Nakajima T, Takakura T, Obata T, Pioro-Ladrière M, Lu H, Palmstrøm C J, Gossard A C, Tarucha S 2014 Phys. Rev. Lett. 113 267601 Google Scholar
[6]	Nadj-Perge S, Frolov S M, Bakkers E P, Kouwenhoven L P 2010 Nature 468 1084 Google Scholar
[7]	van den Berg J W G, Nadj-Perge S, Pribiag V S, Plissard S R, Bakkers E P A M, Frolov S M, Kouwenhoven L P 2013 Phys. Rev. Lett. 110 066806 Google Scholar
[8]	Li R, Hudson F E, Dzurak A S, Hamilton A R 2015 Nano Lett. 15 7314 Google Scholar
[9]	Borselli M G, Eng K, Croke E T, Maune B M, Huang B, Ross R S, Kiselev A A, Deelman P W, Alvarado-Rodriguez I, Schmitz A E, Sokolich M, Holabird K S, Hazard T M, Gyure M F, Hunter A T 2011 Appl. Phys. Lett. 99 063109 Google Scholar
[10]	Hendrickx N W, Lawrie W I L, Russ M, van Riggelen F, de Snoo S L, Schouten R N, Sammak A, Scappucci G, Veldhorst M 2021 Nature 591 580 Google Scholar
[11]	Madzik M T, Asaad S, Youssry A, Joecker B, Rudinger K M, Nielsen E, Young K C, Proctor T J, Baczewski A D, Laucht A, Schmitt V, Hudson F E, Itoh K M, Jakob A M, Johnson B C, Jamieson D N, Dzurak A S, Ferrie C, Blume-Kohout R, Morello A 2022 Nature 601 348 Google Scholar
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[16]	Watzinger H, Kukučka J, Vukušić L, Gao F, Wang T, Schäffler F, Zhang J J, Katsaros G 2018 Nat. Commun. 9 3902 Google Scholar
[17]	Stano P, Loss D 2022 Nat. Rev. Phys. 4 672 Google Scholar
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[19]	Yoneda J, Takeda K, Otsuka T, Nakajima T, Delbecq M R, Allison G, Honda T, Kodera T, Oda S, Hoshi Y, Usami N, Itoh K M, Tarucha S 2018 Nat. Nanotechnol. 13 102 Google Scholar
[20]	Xue X, Russ M, Samkharadze N, Undseth B, Sammak A, Scappucci G, Vandersypen L M K 2022 Nature 601 343 Google Scholar
[21]	Takeda K, Noiri A, Nakajima T, Kobayashi T, Tarucha S 2022 Nature 608 682 Google Scholar
[22]	Mills A R, Guinn C R, Gullans M J, Sigillito A J, Feldman M M, Nielsen E, Petta J R 2022 Sci. Adv. 8 5 Google Scholar
[23]	Philips S G J, Mądzik M T, Amitonov S V, de Snoo S L, Russ M, Kalhor N, Volk C, Lawrie W I L, Brousse D, Tryputen L, Wuetz B P, Sammak A, Veldhorst M, Scappucci G, Vandersypen L M K 2022 Nature 609 919 Google Scholar
[24]	Paquelet Wuetz B, Bavdaz P L, Yeoh L A, Schouten R, van der Does H, Tiggelman M, Sabbagh D, Sammak A, Almudever C G, Sebastiano F, Clarke J S, Veldhorst M, Scappucci G 2020 NPJ Quantum Inf. 6 43 Google Scholar
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[26]	Chung Y J, Villegas Rosales K A, Baldwin K W, Madathil P T, West K W, Shayegan M, Pfeiffer L N 2021 Nat. Mater. 20 632 Google Scholar
[27]	Weitz P, Haug R J, von Klitzing K, Schäffler F 1996 Surf. Sci. 361-362 542 Google Scholar
[28]	Goswami S, Slinker K A, Friesen M, McGuire L M, Truitt J L, Tahan C, Klein L J, Chu J O, Mooney P M, van der Weide D W, Joynt R, Coppersmith S N, Eriksson M A 2007 Nat. Phys. 3 41 Google Scholar
[29]	Zhang D D, Lu J, Liu Z, Wan F S, Liu X Q, Pang Y Q, Zhu Y P, Cheng B W, Zheng J, Zuo Y H, Xue C L 2022 Appl. Phys. Lett. 121 6
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[31]	Tracy L A, Hwang E H, Eng K, Ten Eyck G A, Nordberg E P, Childs K, Carroll M S, Lilly M P, Das Sarma S 2009 Phys. Rev. B 79 235307 Google Scholar
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[33]	Coleridge P T 1990 Semicond. Sci. Technol. 5 961 Google Scholar
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[35]	Wang K, Li H O, Luo G, Zhang X, Jing F M, Hu R Z, Zhou Y, Liu H, Wang G L, Cao G, Jiang H W, Guo G P 2020 Europhys. Lett. 130 27001 Google Scholar
[36]	Monroe D, Xie Y H, Fitzgerald E A, Silverman P J, Watson G P 1993 J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct.—Process. Meas. Phenom. 11 1731

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Vol. 73, Issue 11 - 2024-06-05

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