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通过用数值计算方法自洽求解薛定谔方程和泊松方程,研究了Al组分对AlxGa1-xN/GaN异质结构二维电子气性质的影响,给出了AlxGa1-xN/GaN异质结构二维电子气分布和面密度,导带能带偏移以及子带中电子分布随AlxGa 1-xN势垒层中Al组分的变化关系,并用AlxGa1-xN/GaN 异质结构自发极化与压电极化机理和能
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关键词:
- AlxGa1-xN/GaN异质结构 /
- 二维电子气 /
- 自发极化 /
- 压电极化
By self-consistently sovling the coupled Schrdinger and Poisson equations, we have investingated the property of the two-dimensional electron gases (2DEG) in AlxGa1-xN/GaN heterostructures. We demonstrate the depen dence of the density, the distribution, and the subband occupation of the 2DEG on the Al-content of the AlGaN barrier. Band offset and mechanism of spontaneous and piezoelectric polarization were concerned to discuss our results.-
Keywords:
- AlxGa1-xN/GaN heterostructures /
- two-dimensiona l electron gases /
- spontaneous polarization /
- piezoelectric polarization
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