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Spintronic devices utilize the spin property of electrons for the storage, transmission, and processing of information, inherently possessing advantages such as low power consumption and non-volatility, thus attracting widespread attention from both academia and industry. Spin-orbit torque(SOT) is an efficient method of manipulating magnetic moments using electric current for writing, harnessing the spin-orbit coupling (SOC) effect within materials to achieve the mutual conversion between charge current and spin current. Enhancing the efficiency of charge-spin conversion is a critical issue in the field of spintronics. Strontium ruthenate (SRO) in transition metal oxides(TMO) has attracted significant attention as a spin source material in SOT devices due to its large and tunable charge-to-spin conversion efficiency. However, current research on SOT control in SRO primarily focuses on utilizing substrate strain, with limited exploration of other control methods. Crystal orientation can produce various novel physical properties by affecting material symmetry and electronic structure, is one of the important means to control the properties of TMO materials. Given the close correlation between the SOT effect and electronic structure as well as surface states, crystal orientation is expected to affect SOT properties by adjusting the electronic band structure of TMO. This work investigates the effect of crystal orientation on the SOT performance of SrRuO3 films and develops a novel approach for SOT control. (111)-oriented SRO/CoPt heterostructures and SOT devices were prepared using pulse laser deposition, magnetron sputtering, and micro-nano processing techniques. Through harmonic Hall voltage(HHV) measurements, we found that the SOT efficiency reached 0.39, and the spin Hall conductivity reached 2.19×105ħ/2e Ω−1 m−1, which were 86% and 369% higher than those of the (001) orientation, respectively. Furthermore, current-driven perpendicular magnetization switching was achieved in SrRuO3(111) devices at a low critical current density of 2.4×1010 A/m2, which was 37% lower than that of the (001) orientation. These results demonstrate that crystal orientation is an effective approach to significantly enhance the comprehensive performance of SrRuO3-based SOT devices, providing new insights for developing high-efficiency spintronic devices.
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Keywords:
- transition metal oxide /
- charge-spin interconversion /
- spin-orbit torque /
- crystal orientation control
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[1] Sasikanth M, Dmitri E. N, Ian A. Y 2018 Nat. Phys. 14 338
[2] Dieny B, Prejbeanu I L, Garello K, Gambardella P, Freitas P, Lehndorff R, Raberg W, Ebels U, Demokritov S O, Akerman J, Deac A, Pirro P, Adelmann C, Anane A, Chumak A V, Hirohata A, Mangin S, Valenzuela S O, Cengiz Onbaşlı M, d’Aquino M, Prenat G, Finocchio G, Lopez-Diaz L, Chantrell R, Chubykalo-Fesenko O, Bortolotti P 2020 Nat. Electron. 3 446
[3] Manchon A, Železný J, M. Miron I, Jungwirth T, Sinova J, Thiaville A, Garello K, Gambardella P 2019 Rev. Mod. Phys. 91 035004
[4] Miron I M, Garello K, Gaudin G, Zermatten P-J, Costache M V, Auffret S, Bandiera S, Rodmacq B, Schuhl A, Gambardella P 2011 Nature 476 189
[5] Shao Q, Li P, Liu L, Yang H, Fukami S, Razavi A, Wu H, Wang K, Freimuth F, Mokrousov Y, Stiles M D, Emori S, Hoffmann A, Åkerman J, Roy K, Wang J, Yang S, Garello K, Zhang W 2021 IEEE T. Magn. 57 800439
[6] Chen H, Yi D 2021 APL Mater. 9 060908
[7] Lao B, Zheng X, Li S, Wang Z 2023 Acta Phys. Sin. 72 097702
[8] Nan T, Anderson T J, Gibbons J, Hwang K, Campbell N, Zhou H, Dong Y Q, Kim G Y, Shao D F, Paudel T R, Reynolds N, Wang X J, Sun N X, Tsymbal E Y, Choi S Y, Rzchowski, Kim Y B, Ralph D C, Eom C B 2018 Proc. Natl. Acad. Sci. 33 16186
[9] Everhardt A S, DC M , Huang X, Sayed S, Gosavi T A, Tang Y, Lin C, Manipatruni S, Young I A, Datta S, Wang J, and Ramesh R 2019 Phys. Rev. Mater. 3 051201
[10] Wang H, Meng K, Zhang P, Hou J T, Finley J, Han J, Yang F, Liu L 2019 Appl. Phys. Lett. 23 232406
[11] Liu L, Qin Q, Lin W, Li C, Xie Q, He S, Shu X, Zhou C, Lim Z, Yu J, Lu W, Li M, Yan X, Pennycook S J, Chen J 2019 Nat. Nanotechnol. 14 939
[12] Wahler M, Homonnay N, Richter T, Müller A, Eisenschmidt C, Fuhrmann B, Schmidt G 2016 Sci. Rep. 6 28727
[13] Ou Y, Wang Z, Chang C S, Nair H P, Paik H, Reynolds N, Ralph D C, Muller D A, Schlom D G, Buhrman R A 2019 Nano Lett. 19 3663
[14] Emori S, Alaan U S, Gray M T, Sluka V, Chen Y, Kent A, Suzuki Y 2016 Phys. Rev. B 94 224423
[15] Eom C B, Cava R J, Fleming R M, Phillips J M, Vandover R B, Marshall J H, Hsu J W P, Krajewski J J, Peck W F 1992 Science 258 1766
[16] Koster G, Klein L, Siemons W, Rijnders G, Dodge J S, Eom C-B, Blank D H A, Beasley M R, 2012 Rev. Mod. Phys. 84 253
[17] Wei J, Zhong H, Liu J, Wang X, Meng F, Xu H, Liu Y, Luo X, Zhang Q, Guang Y, Feng J, Zhang J, Yang L, Ge C, Gu L, Jin K, Yu G, Han X 2021 Adv. Funct. Mater. 31 2100380
[18] Zhou J, Shu X, Lin W, Shao D F, Chen S, Liu L, Yang P, Tsymbal E Y, Chen J 2021 Adv. Mater. 33 2007114
[19] Li S, Lao B, Lu Z, Zheng Z, Zhao K, Gong L, Tang T, Wu K, Li R, Wang Z 2023 Phys. Rev. Mater. 7 024418
[20] Dagotto E 2005 Science 309 257
[21] Ahn C, Cavalleri A, Georges A, Ismail-Beigi S, Millis A J, Triscone J-M 2021 Nat. Mater. 20 1462
[22] Lu Z, Yang Y, Wen L, Feng J, Lao B, Zheng X, Li S, Zhao K, Cao B, Ren Z, Song D, Du H, Guo Y, Zhong Z, Hao X, Wang Z, Li R 2022 npj Flex. Electron. 6 9
[23] Wang Z, Zhong Z, MckeownWalker S, Ristic Z, Ma J-Z, Bruno F Y, Ricco S, Sangiovanni G, Eres G, Plumb N C, Patthey L, Shi M, Mesot J, Baumberger F, Radovic M 2017 Nano Lett. 17 2561
[24] Peng W, Park S, Roh C, Mun J, Ju H, Kim J, Ko E K, Liang Z, Hahn S, Zhang J, Sanchez A M, Walker D, Hindmarsh S, Si L, Jo Y J, Jo Y, Kim T, Kim C, Wang L, Kim M, Lee J S, Noh T W, Lee D 2024 Nat. Phys.
[25] Hayashi M, Kim J, Yamanouchi M, Ohno H 2014 Phys. Rev. B 89 144425
[26] Kim J, Sinha J, Hayashi M, Yamanouchi M, Fukami S, Suzuki T, Mitani S, Ohno H 2013 Nat. Mater. 12 240
[27] Yang M, Cai K, Ju H, Edmonds K W, Yang G, Liu S, Li B, Zhang B, Sheng Y, Wang S, Ji Y, Wang K 2016 Sci. Rep. 6 20778
[28] Liu L, Pai C-F, Li Y, Tseng H W, Ralph D C, Buhrman R A 2012 Science 336 555
[29] Zhu L, Ralph D C, Buhrman R A 2021 Appl. Phys. Rev. 8 031308
[30] Garello K, Miron I M, Avci C O, Freimuth F, Mokrousov Y, Blugel S, Auffret S, Boulle O, Gaudin G, Gambardella P 2013 Nat. Nanotechnol. 8 587
[31] Jin F, Gu M, Ma C, Guo E, Zhu J, Qu L, Zhang Z, Zhang K, Xu L, Chen B, Chen F, Gao G, Rondinelli J M, Wu W 2020 Nano Lett. 30 1131
[32] Wang Z, Qi W, Bi J, Li X, Chen Y, Yang F, Cao Y, Gu L, Zhang Q, Wang H 2022 Chinese Phys. B 31 126801
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