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基于应变Si/SiGe器件结构，本文建立了统一的应变Si NMOSFET电荷模型. 该模型采用电荷作为状态变量，解决了电荷守恒问题. 同时采用平滑函数，实现了应变Si NMOSFET端口电荷及其电容，从亚阈值区到强反型区以及从线性区到饱和区的平滑性，解决了模型的连续性问题. 然后采用模拟硬件描述语言Verilog-A建立了电容模型. 通过将模型的仿真结果和实验结果对比分析，验证了所建模型的有效性. 该模型可为应变Si集成电路分析、设计提供重要参考.
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关键词:
- 应变Si n型金属氧化物半导体场效应晶体管 /
- 电荷模型 /
- 平滑函数
Based on the structure of strained Si/SiGe NMOSFET, a unified charge model is presented, in which charge conservation is guaranteed by using the charge as the state variable. The model describes device characteristics from subthreshold to strong inversion as well as from the linear to the saturation operating regions using a smoothing function, and guarantees the continuities of charges and capacitances. Furthermore, capacitance models have been presented using Verilog-A, a language to describe analog behavior. Comparisons between the model and measured data show that the charge model can describe the device characteristics well. The proposed model is useful for the design and simulation of integrated circuits made of strained Si.-
Keywords:
- strained Si NMOSFET /
- charge model /
- smoothing function
[1] O’Neil A G, Antoniadis D A 1996 IEEE Trans. Electron Devices 43 911
[2] Wang G Y, Zhang H M, Wang X Y, Wu T F, Wang B 2011 Acta Phys. Sin. 60 077106 (in Chinese)[王冠宇, 张鹤鸣, 王晓艳, 吴铁峰, 王斌 2011 物理学报 60 077106]
[3] Wang B, Zhang H M, Hu H Y, Zhang Y M, Shu B, Zhou C Y, Li Y C, L L 2013 Acta Phys. Sin. 62 057103 (in Chinese)[王斌, 张鹤鸣, 胡辉勇, 张玉明, 舒斌, 周春宇, 李妤晨, 吕懿 2013 物理学报 62 057103]
[4] Wei J Y, Maikap S, Lee M H, Lee C C, Liu C W 2006 Solid-State Electronics 50 109
[5] Chandrasekaran K, Xin Z, Chiah S B, See G H, Bera L K, Balasubramanian N, Rustagi S C 2006 IEEE Electron Devices Lett. 27 62
[6] Liao J H, Canonico M, Robinson M, Schroder D K 2006 ECS Trans. 3 1211
[7] Bindu B, Nandita D G, Amitava D G 2006 IEEE Trans. Electron Devices 53 1411
[8] Ytterdal T, Cheng Y H, Fjeldly T A 2003 Device Modeling for Analog and RF CMOS Circuit Design (England: John Wiley & Sons Ltd) p7
[9] Carlos G M, Marcio C S 2007 MOSFET Modeling for Circuit Analysis and Design (Singapore: World Scientific Press) p163
[10] Arora N 2007 MOSFET Modeling for VLSI Simulation (Singapore: World Scientific Press) p12–68
[11] Yannis T, Colin M 2011 Operation and Modeling of the MOS Transistor (3rd Ed.)(New York: Oxford University Press)p600–638
[12] Fossum J G, Jeong H, Veeraeaghavan S 1986 IEEE Trans. Electron Devices 33 1621
[13] Zhou C Y, Zhang H M, Hu H Y, Zhuang Y Q, Su B, Wang B, Wang G Y 2013 Acta Phys. Sin. 62 077103 (in Chinese)[周春宇, 张鹤鸣, 胡辉勇, 庄奕琪, 舒斌, 王斌, 王冠宇2013 物理学报 62 077103]
[14] Cheng Y H, Jeng M C, Liu Z H, Huang J H, Chen K, Ping K K, Hu C M 1997 IEEE Trans. Electron Devices 44 280
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[1] O’Neil A G, Antoniadis D A 1996 IEEE Trans. Electron Devices 43 911
[2] Wang G Y, Zhang H M, Wang X Y, Wu T F, Wang B 2011 Acta Phys. Sin. 60 077106 (in Chinese)[王冠宇, 张鹤鸣, 王晓艳, 吴铁峰, 王斌 2011 物理学报 60 077106]
[3] Wang B, Zhang H M, Hu H Y, Zhang Y M, Shu B, Zhou C Y, Li Y C, L L 2013 Acta Phys. Sin. 62 057103 (in Chinese)[王斌, 张鹤鸣, 胡辉勇, 张玉明, 舒斌, 周春宇, 李妤晨, 吕懿 2013 物理学报 62 057103]
[4] Wei J Y, Maikap S, Lee M H, Lee C C, Liu C W 2006 Solid-State Electronics 50 109
[5] Chandrasekaran K, Xin Z, Chiah S B, See G H, Bera L K, Balasubramanian N, Rustagi S C 2006 IEEE Electron Devices Lett. 27 62
[6] Liao J H, Canonico M, Robinson M, Schroder D K 2006 ECS Trans. 3 1211
[7] Bindu B, Nandita D G, Amitava D G 2006 IEEE Trans. Electron Devices 53 1411
[8] Ytterdal T, Cheng Y H, Fjeldly T A 2003 Device Modeling for Analog and RF CMOS Circuit Design (England: John Wiley & Sons Ltd) p7
[9] Carlos G M, Marcio C S 2007 MOSFET Modeling for Circuit Analysis and Design (Singapore: World Scientific Press) p163
[10] Arora N 2007 MOSFET Modeling for VLSI Simulation (Singapore: World Scientific Press) p12–68
[11] Yannis T, Colin M 2011 Operation and Modeling of the MOS Transistor (3rd Ed.)(New York: Oxford University Press)p600–638
[12] Fossum J G, Jeong H, Veeraeaghavan S 1986 IEEE Trans. Electron Devices 33 1621
[13] Zhou C Y, Zhang H M, Hu H Y, Zhuang Y Q, Su B, Wang B, Wang G Y 2013 Acta Phys. Sin. 62 077103 (in Chinese)[周春宇, 张鹤鸣, 胡辉勇, 庄奕琪, 舒斌, 王斌, 王冠宇2013 物理学报 62 077103]
[14] Cheng Y H, Jeng M C, Liu Z H, Huang J H, Chen K, Ping K K, Hu C M 1997 IEEE Trans. Electron Devices 44 280
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