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Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands

Shang Li-Yan Lin Tie Zhou Wen-Zheng Huang Zhi-Ming Li Dong-Lin Gao Hong-Ling Cui Li-Jie Zeng Yi-Ping Guo Shao-Ling Chu Jun-Hao

Citation:

Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands

Shang Li-Yan, Lin Tie, Zhou Wen-Zheng, Huang Zhi-Ming, Li Dong-Lin, Gao Hong-Ling, Cui Li-Jie, Zeng Yi-Ping, Guo Shao-Ling, Chu Jun-Hao
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  • Abstract views:  8050
  • PDF Downloads:  828
  • Cited By: 0
Publishing process
  • Received Date:  31 July 2007
  • Accepted Date:  09 November 2007
  • Published Online:  05 February 2008

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