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2021, 70(21): 217301.
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2020, 69(15): 157303.
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2020, 69(7): 078501.
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Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan. Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica,
2020, 69(4): 047201.
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Liu Yan-Li, Wang Wei, Dong Yan, Chen Dun-Jun, Zhang Rong, Zheng You-Dou. Effect of structure parameters on performance of N-polar GaN/InAlN high electron mobility transistor. Acta Physica Sinica,
2019, 68(24): 247203.
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Liu Jing, Wang Lin-Qian, Huang Zhong-Xiao. Current collapse suppression in AlGaN/GaN high electron mobility transistor with groove structure. Acta Physica Sinica,
2019, 68(24): 248501.
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Zhou Xing-Ye, Lv Yuan-Jie, Tan Xin, Wang Yuan-Gang, Song Xu-Bo, He Ze-Zhao, Zhang Zhi-Rong, Liu Qing-Bin, Han Ting-Ting, Fang Yu-Long, Feng Zhi-Hong. Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurement. Acta Physica Sinica,
2018, 67(17): 178501.
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2017, 66(16): 167301.
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2016, 65(1): 016802.
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Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei. Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica,
2016, 65(3): 038402.
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Wang Xian-Bin, Zhao Zheng-Ping, Feng Zhi-Hong. Simulation study of two-dimensional electron gas in N-polar GaN/AlGaN heterostructure. Acta Physica Sinica,
2014, 63(8): 080202.
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Li Jia-Dong, Cheng Jun-Jie, Miao Bin, Wei Xiao-Wei, Zhang Zhi-Qiang, Li Hai-Wen, Wu Dong-Min. Research on biomolecule-gate AlGaN/GaN high-electron-mobility transistor biosensors. Acta Physica Sinica,
2014, 63(7): 070204.
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Ren Jian, Yan Da-Wei, Gu Xiao-Feng. Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2013, 62(15): 157202.
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Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue. A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2012, 61(4): 047301.
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2010, 59(10): 7333-7337.
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2007, 56(8): 4955-4959.
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2003, 52(4): 984-988.
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Lv YONG-LIANG, ZHOU SHI-PING, XU DE-MING. ANALYSIS OF PROPERTIES OF HIGH-ELECTRON-MOBILITY-TRANSISTOR UNDER OPTICAL ILLUMI NATION. Acta Physica Sinica,
2000, 49(7): 1394-1399.
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