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具有部分本征GaN帽层新型AlGaN/GaN高电子迁移率晶体管特性分析

郭海君 段宝兴 袁嵩 谢慎隆 杨银堂

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具有部分本征GaN帽层新型AlGaN/GaN高电子迁移率晶体管特性分析

郭海君, 段宝兴, 袁嵩, 谢慎隆, 杨银堂

Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layer

Guo Hai-Jun, Duan Bao-Xing, Yuan Song, Xie Shen-Long, Yang Yin-Tang
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  • 为了优化传统AlGaN/GaN高电子迁移率晶体管(high electron mobility transistors,HEMTs)器件的表面电场,提高击穿电压,本文提出了一种具有部分本征GaN帽层的新型AlGaN/GaN HEMTs器件结构.新型结构通过在AlGaN势垒层顶部、栅电极到漏电极的漂移区之间引入部分本征GaN帽层,由于本征GaN帽层和AlGaN势垒层界面处的极化效应,降低了沟道二维电子气(two dimensional electron gas,2DEG)的浓度,形成了栅边缘低浓度2DEG区域,使得沟道2DEG浓度分区,由均匀分布变为阶梯分布.通过调制沟道2DEG的浓度分布,从而调制了AlGaN/GaN HEMTs器件的表面电场.利用电场调制效应,产生了新的电场峰,且有效降低了栅边缘的高峰电场,AlGaN/GaN HEMTs器件的表面电场分布更加均匀.利用ISE-TCAD软件仿真分析得出:通过设计一定厚度和长度的本征GaN帽层,AlGaN/GaN HEMTs器件的击穿电压从传统结构的427 V提高到新型结构的960 V.由于沟道2DEG浓度减小,沟道电阻增加,使得新型AlGaN/GaN HEMTs器件的最大输出电流减小了9.2%,截止频率几乎保持不变,而最大振荡频率提高了12%.
    In order to reduce the high electric field peak near the gate edge and optimize the non-uniform surface electric field distribution of conventional AlGaN/GaN high electron mobility transistor (HEMT), a novel AlGaN/GaN HEMT with a partial GaN cap layer is proposed in this paper. The partial GaN cap layer is introduced at the top of the AlGaN barrier layer and is located from the gate to the drain drift region. A negative polarization charge at the upper hetero-junction interface is induced, owing to the polarization effect at the GaN cap layer and AlGaN barrier layer interface. Hence, the two dimensional electron gas (2DEG) density is reduced. The low-density 2DEG region near the gate edge is formed, which turns the uniform distribution into a gradient distribution. The concentration distribution of 2DEG is modified. Therefore, the surface electric field distribution of AlGaN/GaN HEMT is modulated. By the electric field modulation effect, a new electric field peak is produced and the high electric field peak near the gate edge of the drain side is effectively reduced. The surface electric field of AlGaN/GaN HEMT is more uniformly redistributed in the drift region. In virtue of ISE-TCAD simulation software, the equipotential and the surface electric field distribution of AlGaN/GaN HEMT are obtained. For the novel AlGaN/GaN HEMT employing a partial GaN cap layer, the 2DEG is completely depleted from the gate to the drain electrodes, arising from the low-density 2DEG near the gate edge, while the 2DEG is partly depleted for the conventional AlGaN/GaN HEMT. The surface electric field distribution of the conventional structure is compared with the one of the novel structures with partial GaN cap layers of different lengths at a fixed thickness of 228 nm. With increasing length, the new electric field peak increases and shifts toward the drain electrode, and the high electric field peak on the drain side of the gate edge is reduced. Moreover, the breakdown voltage dependence on the length and thickness of the partial GaN cap layer is achieved. The simulation results exhibit that the breakdown voltage can be improved to 960 V compared with 427 V of the conventional AlGaN/GaN HEMT under the optimum conditions. The threshold voltage of AlGaN/GaN HEMT remains unchanged. The maximum output current of AlGaN/GaN HEMT is reduced by 9.2% and the specific on-resistance is increased by 11% due to a 2DEG density reduction. The cut-off frequency keeps constant and the maximum oscillation frequency shows an improvement of 12% resulting from the increased output resistance. The results demonstrate that the proposed AlGaN/GaN HEMT is an attractive candidate in realizing the high-voltage operation of GaN-based power device.
      通信作者: 段宝兴, bxduan@163.com
    • 基金项目: 国家重点基础研究发展计划(批准号:2014CB339900,2015CB351900)和国家自然科学基金重点项目(批准号:61234006,61334002)资助的课题.
      Corresponding author: Duan Bao-Xing, bxduan@163.com
    • Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2014CB339900, 2015CB351900) and the Key Program of the National Natural Science Foundation of China (Grant Nos. 61234006, 61334002).
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    Karmalkar S, Deng J, Shur M S 2001 IEEE Electron Dev. Lett. 22 373

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    Nanjo T, Imai A, Suzuki Y, Abe Y, Oishi T, Suita M, Yagyu E, Tokuda Y 2013 IEEE Trans. Electron. Dev. 60 1046

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    Song D, Liu J, Cheng Z, Tang W C W, Lau K M, Chen K J 2007 IEEE Electron Dev. Lett. 28 189

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    Polyakov A Y, Smirnov N B, Govorkov A V, Yugova T G, Markov A V, Dabiran A M, Wowchak A M, Cui B, Xie J, Osinsky A V, Chow P P, Pearton S J 2008 Appl. Phys. Lett. 92 042110

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    Hirose M, Takada Y, Tsuda K 2012 Phys. Stat. Sol. C 9 361

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    Treidel E B, Hilt O, Brunner F, Wrfl J, Tränkle G 2008 IEEE Trans. Electron. Dev. 55 3354

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    Udrea F, Popescu A, Milne W I 1998 Electron. Lett. 34 808

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    Duan B X, Yang Y T, Zhang B 2009 IEEE Electron Dev. Lett. 30 305

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    Duan B X, Yang Y T 2012 Sci. China:Inf. Sci. 55 473

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    Duan B X, Yang Y T 2012 Chin. Phys. B 21 057201

    [20]

    Duan B X, Yang Y T, Chen J 2012 Acta Phys. Sin. 61 247302(in Chinese)[段宝兴, 杨银堂, 陈敬2012物理学报61 247302]

    [21]

    Duan B X, Yang Y T 2014 Acta Phys. Sin. 63 057302(in Chinese)[段宝兴, 杨银堂2014物理学报63 057302]

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    Heikman S, Keller S, Wu Y, Speck J S, Denbaars S P, Mishra U K 2003 J. Appl. Phys. 93 10114

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    Baliga B J 2008 Fundamentals of Power Semiconductor Devices (New York:Springer) pp1-2

  • [1]

    Tham W H, Ang D S, Bera L K, Dolmanan S B, Bhat T N, Lin V K, Tripathy S 2016 IEEE Trans. Electron. Dev. 63 345

    [2]

    Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J 1999 J. Appl. Phys. 85 3222

    [3]

    Yu E T, Dang X Z, Asbeck P M, Lau S S, Sullivan G J 1999 J. Vac. Sci. Technol. B 17 1742

    [4]

    Huang X, Liu Z, Li Q, Lee F C 2014 IEEE Trans. Power Electron. 29 2453

    [5]

    Karmalkar S, Mishra U K 2001 IEEE Trans. Electron. Dev. 48 1515

    [6]

    Okamoto Y, Ando Y, Nakayama T, Hataya K, Miyamoto H, Inoue T, Senda M, Hirata K, Kosaki M, Shibata N, Kuzuhara M 2004 IEEE Trans. Electron. Dev. 51 2217

    [7]

    Saito W, Kuraguchi M, Takada Y, Tsuda K, Omura I, Ogura T 2005 IEEE Trans. Electron. Dev. 52 106

    [8]

    Wong J, Shinohara K, Corrion A L, Brown D F, Carlos Z, Williams A, Tang Y, Robinson J F, Khalaf I, Fung H, Schmitz A, Oh T, Kim S, Chen S, Burnham S, Margomenos A, Micovic M 2017 IEEE Electron Dev. Lett. 38 95

    [9]

    Karmalkar S, Deng J, Shur M S 2001 IEEE Electron Dev. Lett. 22 373

    [10]

    Nanjo T, Imai A, Suzuki Y, Abe Y, Oishi T, Suita M, Yagyu E, Tokuda Y 2013 IEEE Trans. Electron. Dev. 60 1046

    [11]

    Song D, Liu J, Cheng Z, Tang W C W, Lau K M, Chen K J 2007 IEEE Electron Dev. Lett. 28 189

    [12]

    Kato S, Satoh Y, Sasaki H, Masayuki I, Yoshida S 2007 J. Cryst. Growth 298 831

    [13]

    Polyakov A Y, Smirnov N B, Govorkov A V, Yugova T G, Markov A V, Dabiran A M, Wowchak A M, Cui B, Xie J, Osinsky A V, Chow P P, Pearton S J 2008 Appl. Phys. Lett. 92 042110

    [14]

    Hirose M, Takada Y, Tsuda K 2012 Phys. Stat. Sol. C 9 361

    [15]

    Treidel E B, Hilt O, Brunner F, Wrfl J, Tränkle G 2008 IEEE Trans. Electron. Dev. 55 3354

    [16]

    Udrea F, Popescu A, Milne W I 1998 Electron. Lett. 34 808

    [17]

    Duan B X, Yang Y T, Zhang B 2009 IEEE Electron Dev. Lett. 30 305

    [18]

    Duan B X, Yang Y T 2012 Sci. China:Inf. Sci. 55 473

    [19]

    Duan B X, Yang Y T 2012 Chin. Phys. B 21 057201

    [20]

    Duan B X, Yang Y T, Chen J 2012 Acta Phys. Sin. 61 247302(in Chinese)[段宝兴, 杨银堂, 陈敬2012物理学报61 247302]

    [21]

    Duan B X, Yang Y T 2014 Acta Phys. Sin. 63 057302(in Chinese)[段宝兴, 杨银堂2014物理学报63 057302]

    [22]

    Heikman S, Keller S, Wu Y, Speck J S, Denbaars S P, Mishra U K 2003 J. Appl. Phys. 93 10114

    [23]

    Baliga B J 2008 Fundamentals of Power Semiconductor Devices (New York:Springer) pp1-2

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出版历程
  • 收稿日期:  2017-04-11
  • 修回日期:  2017-06-05
  • 刊出日期:  2017-08-05

具有部分本征GaN帽层新型AlGaN/GaN高电子迁移率晶体管特性分析

  • 1. 西安电子科技大学微电子学院, 宽禁带半导体材料与器件教育部重点实验室, 西安 710071
  • 通信作者: 段宝兴, bxduan@163.com
    基金项目: 国家重点基础研究发展计划(批准号:2014CB339900,2015CB351900)和国家自然科学基金重点项目(批准号:61234006,61334002)资助的课题.

摘要: 为了优化传统AlGaN/GaN高电子迁移率晶体管(high electron mobility transistors,HEMTs)器件的表面电场,提高击穿电压,本文提出了一种具有部分本征GaN帽层的新型AlGaN/GaN HEMTs器件结构.新型结构通过在AlGaN势垒层顶部、栅电极到漏电极的漂移区之间引入部分本征GaN帽层,由于本征GaN帽层和AlGaN势垒层界面处的极化效应,降低了沟道二维电子气(two dimensional electron gas,2DEG)的浓度,形成了栅边缘低浓度2DEG区域,使得沟道2DEG浓度分区,由均匀分布变为阶梯分布.通过调制沟道2DEG的浓度分布,从而调制了AlGaN/GaN HEMTs器件的表面电场.利用电场调制效应,产生了新的电场峰,且有效降低了栅边缘的高峰电场,AlGaN/GaN HEMTs器件的表面电场分布更加均匀.利用ISE-TCAD软件仿真分析得出:通过设计一定厚度和长度的本征GaN帽层,AlGaN/GaN HEMTs器件的击穿电压从传统结构的427 V提高到新型结构的960 V.由于沟道2DEG浓度减小,沟道电阻增加,使得新型AlGaN/GaN HEMTs器件的最大输出电流减小了9.2%,截止频率几乎保持不变,而最大振荡频率提高了12%.

English Abstract

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