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In order to enhance the performance of AlGaN/GaN high electron mobility transistor (HEMT) biosensor, millimeter grade AlGaN/GaN HEMT structure have been designed and successfully fabricated. Factors influencing the capability of the AlGaN/GaN HEMT biosensor are analyzed. UV/ozone is used to oxidize GaN surface and then 3-aminopropyl trimethoxysilane (APTES) self-assembled monolayer can be bound to the sensing region. This serves as a binding layer in the attachment of prostate specific antibody (anti-PSA) for prostate specific antigen detection. The millimeter grade biomolecule-gated GaN/AlGaN HEMT sensor shows a quick response when the target prostate specific antigen in a buffer solution is added to the antibody-immobilized sensing area. The detection capability of this biomolecule-gate sensor estimated to be below 0.1 pg/ml level using a 21.5 mm2 sensing area, which is the best result of GaN/AlGaN HEMT biosensor for PSA detection till now. The electrical result of the biomolecule-gated GaN/AlGaN HEMT biosensor suggests that this biosensor might be a useful tool for the prostate cancer screening.
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Keywords:
- two-dimensional electron gas /
- high electron mobility transistor /
- biosensor /
- prostate specific antigen
[1] Xue W 2012 MS. Dissertation (Beijing: Graduate University of Chinese Academy of Sciences) (in Chinese) [薛伟2012 硕士学位论文(北京: 中国科学院研究生院)]
[2] Zhang J C, Zheng P T, Dong Z D, Duan H T, Ni J Y, Zhang J F, Hao Y 2009 Acta Phys. Sin. 58 3409 (in Chinese)[张进成, 郑鹏天, 董作典, 段焕涛, 倪金玉, 张金凤, 郝跃2009 物理学报58 3409]
[3] Lin T H 2006 MS. Dissertation (Tainan: National Cheng Kung University) (in Chinese) [林宗翰2006 硕士学位论文(台南: 国立成功大学)]
[4] Sun J D, Qin H, Lewis R A, Sun Y F, Zhang X Y, Cai Y, Wu D M, Zhang B S 2012 Appl. Phys. Lett. 100 173513
[5] Sun Y F, Sun J D, Zhang X Y, Qin H, Zhang B S, Wu D M 2012 Chin. Phys. B 21 108504
[6] Hu W D, Wang L, Chen X S, Guo N, Miao J S, Yu A Q, Lu W 2013 Opt. Quant Electron 45 713
[7] Wang X D, Hu W D, Chen X S, Lu W 2012 IEEE Transactions on Electron Devices 59 1393
[8] Xu Z, Wang J Y, Cai Y, Liu J Q, Yang Z, Li X P, Wang M J, Yu M, Xin B, Wu W G, Ma X H, Zhang J C, Hao Y 2014 IEEE Electron Device Letters 35 33
[9] Kang B S, Wang H T, Lele T P, Tseng Y, Ren F, Pearton S J, Johnson J W, Rajagopal P, Roberts J C, Piner E L, Linthicum K J 2007 Appl. Phys. Lett. 91 112106
[10] Chen K H, Wang H W, Kang B S, Chang C Y, Wang Y L, Lele T P, Ren F, Pearton S J, Dabiran A, Osinsky A, Chow P P 2008 Sensors and Actuators B 134 386
[11] Wang Y L, Chu B H, Chen K H, Chang C Y, Lele T P, Papadi G, Coleman J K, Sheppard B J, Dungen C F, Pearton, S J, Johnson J W, Rajagopal P, Roberts J C, Piner E L, Linthicum K J, Ren F 2009 Appl. Phys. Lett. 94 243901
[12] Ito T, Forman S M, Cao C, Li F, Eddy C R, Mastro J M A, Holm R T, Henry R L, Hohn K L, Edgar J H 2008 Langmuir 24 6630
[13] Schwarz S U, Linkohr S, Lorenz P, Krischok S, Nakamura T, Cimalla V, Nebel C E, and Ambacher O 2011 Phys. Status Solidi A 208 1626
[14] Thapa R, Alur S, Kim K, Tong F, Sharma Y, Kim M, Ahyi C, Dai J, Hong J W, Bozack M, Williams J, Son A, Dabiran A, Park M 2012 Appl. Phys. Lett. 100 232109
[15] Xue W, Li J D, Xie J, Wu D M. 2012 Micronanoelectronic Technology 7 425 (in Chinese) [薛伟, 李加东, 谢杰, 吴东岷2012 微纳电子技术7 425]
[16] Neamen D A (translated by Zhao Y Q, Yao S Y, Xie X D et al) 2007 Semiconductor Physics and Devices (Vol. 3) (Beijing: Electronics Industry Press) pp110–113 (in Chinese) [尼曼著(赵毅强, 姚素英、解晓东等译), 2007 半导体器件与物理(第三版), (北京: 电子工业出版社) 第 423-424 页]
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[1] Xue W 2012 MS. Dissertation (Beijing: Graduate University of Chinese Academy of Sciences) (in Chinese) [薛伟2012 硕士学位论文(北京: 中国科学院研究生院)]
[2] Zhang J C, Zheng P T, Dong Z D, Duan H T, Ni J Y, Zhang J F, Hao Y 2009 Acta Phys. Sin. 58 3409 (in Chinese)[张进成, 郑鹏天, 董作典, 段焕涛, 倪金玉, 张金凤, 郝跃2009 物理学报58 3409]
[3] Lin T H 2006 MS. Dissertation (Tainan: National Cheng Kung University) (in Chinese) [林宗翰2006 硕士学位论文(台南: 国立成功大学)]
[4] Sun J D, Qin H, Lewis R A, Sun Y F, Zhang X Y, Cai Y, Wu D M, Zhang B S 2012 Appl. Phys. Lett. 100 173513
[5] Sun Y F, Sun J D, Zhang X Y, Qin H, Zhang B S, Wu D M 2012 Chin. Phys. B 21 108504
[6] Hu W D, Wang L, Chen X S, Guo N, Miao J S, Yu A Q, Lu W 2013 Opt. Quant Electron 45 713
[7] Wang X D, Hu W D, Chen X S, Lu W 2012 IEEE Transactions on Electron Devices 59 1393
[8] Xu Z, Wang J Y, Cai Y, Liu J Q, Yang Z, Li X P, Wang M J, Yu M, Xin B, Wu W G, Ma X H, Zhang J C, Hao Y 2014 IEEE Electron Device Letters 35 33
[9] Kang B S, Wang H T, Lele T P, Tseng Y, Ren F, Pearton S J, Johnson J W, Rajagopal P, Roberts J C, Piner E L, Linthicum K J 2007 Appl. Phys. Lett. 91 112106
[10] Chen K H, Wang H W, Kang B S, Chang C Y, Wang Y L, Lele T P, Ren F, Pearton S J, Dabiran A, Osinsky A, Chow P P 2008 Sensors and Actuators B 134 386
[11] Wang Y L, Chu B H, Chen K H, Chang C Y, Lele T P, Papadi G, Coleman J K, Sheppard B J, Dungen C F, Pearton, S J, Johnson J W, Rajagopal P, Roberts J C, Piner E L, Linthicum K J, Ren F 2009 Appl. Phys. Lett. 94 243901
[12] Ito T, Forman S M, Cao C, Li F, Eddy C R, Mastro J M A, Holm R T, Henry R L, Hohn K L, Edgar J H 2008 Langmuir 24 6630
[13] Schwarz S U, Linkohr S, Lorenz P, Krischok S, Nakamura T, Cimalla V, Nebel C E, and Ambacher O 2011 Phys. Status Solidi A 208 1626
[14] Thapa R, Alur S, Kim K, Tong F, Sharma Y, Kim M, Ahyi C, Dai J, Hong J W, Bozack M, Williams J, Son A, Dabiran A, Park M 2012 Appl. Phys. Lett. 100 232109
[15] Xue W, Li J D, Xie J, Wu D M. 2012 Micronanoelectronic Technology 7 425 (in Chinese) [薛伟, 李加东, 谢杰, 吴东岷2012 微纳电子技术7 425]
[16] Neamen D A (translated by Zhao Y Q, Yao S Y, Xie X D et al) 2007 Semiconductor Physics and Devices (Vol. 3) (Beijing: Electronics Industry Press) pp110–113 (in Chinese) [尼曼著(赵毅强, 姚素英、解晓东等译), 2007 半导体器件与物理(第三版), (北京: 电子工业出版社) 第 423-424 页]
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