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2024, 73(18): 183101.
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Cheng Ai-Qiang, Wang Shuai, Xu Zu-Yin, He Jin, Zhang Tian-Cheng, Bao Hua-Guang, Ding Da-Zhi. A large-signal scaling model of high-power GaN microwave device. Acta Physica Sinica,
2023, 72(14): 147103.
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2021, 70(17): 172401.
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2021, 70(21): 217301.
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2020, 69(4): 047201.
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Liu Jing, Wang Lin-Qian, Huang Zhong-Xiao. Current collapse suppression in AlGaN/GaN high electron mobility transistor with groove structure. Acta Physica Sinica,
2019, 68(24): 248501.
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Liu Yan-Li, Wang Wei, Dong Yan, Chen Dun-Jun, Zhang Rong, Zheng You-Dou. Effect of structure parameters on performance of N-polar GaN/InAlN high electron mobility transistor. Acta Physica Sinica,
2019, 68(24): 247203.
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2018, 67(17): 178501.
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2016, 65(1): 016802.
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Li Zhi-Peng, Li Jing, Sun Jing, Liu Yang, Fang Jin-Yong. High power microwave damage mechanism on high electron mobility transistor. Acta Physica Sinica,
2016, 65(16): 168501.
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2016, 65(3): 038402.
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Ren Jian, Yan Da-Wei, Gu Xiao-Feng. Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2013, 62(15): 157202.
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Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue. A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2012, 61(4): 047301.
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Wang Chong, Quan Si, Ma Xiao-Hua, Hao Yue, Zhang Jin-Cheng, Mao Wei. High temperature annealing of enhancement-mode AlGaN/GaN high-electron-mobility transistors. Acta Physica Sinica,
2010, 59(10): 7333-7337.
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Cheng Zhi-Qun, Zhou Xiao-Peng, Hu Sha, Zhou Wei-Jian, Zhang Sheng. Optimization design of high linearity AlxGa1-xN/AlyGa1-yN/GaN high electron mobility transistor. Acta Physica Sinica,
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2007, 56(9): 5536-5541.
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2007, 56(3): 1603-1607.
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2007, 56(7): 4117-4121.
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Lv YONG-LIANG, ZHOU SHI-PING, XU DE-MING. ANALYSIS OF PROPERTIES OF HIGH-ELECTRON-MOBILITY-TRANSISTOR UNDER OPTICAL ILLUMI NATION. Acta Physica Sinica,
2000, 49(7): 1394-1399.
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