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Lü Ling, Xing Mu-Han, Xue Bo-Rui, Cao Yan-Rong, Hu Pei-Pei, Zheng Xue-Feng, Ma Xiao-Hua, Hao Yue. Effect of heavy ion radiation on low frequency noise characteristics of AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2024, 73(3): 036103.
doi: 10.7498/aps.73.20221360
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Liu Nai-Zhang, Yao Ruo-He, Geng Kui-Wei. Gate capacitance model of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2021, 70(21): 217301.
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Zhang Xue-Bing, Liu Nai-Zhang, Yao Ruo-He. Polar optical phonon scattering of two-dimensional electron gas in AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2020, 69(15): 157303.
doi: 10.7498/aps.69.20200250
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Hao Rui-Jing, Guo Hong-Xia, Pan Xiao-Yu, Lü Ling, Lei Zhi-Feng, Li Bo, Zhong Xiang-Li, Ouyang Xiao-Ping, Dong Shi-Jian. Neutron-induced displacement damage effect and mechanism of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2020, 69(20): 207301.
doi: 10.7498/aps.69.20200714
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Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan. Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica,
2020, 69(4): 047201.
doi: 10.7498/aps.69.20190640
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Liu Jing, Wang Lin-Qian, Huang Zhong-Xiao. Current collapse suppression in AlGaN/GaN high electron mobility transistor with groove structure. Acta Physica Sinica,
2019, 68(24): 248501.
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Zhang Li, Lin Zhi-Yu, Luo Jun, Wang Shu-Long, Zhang Jin-Cheng, Hao Yue, Dai Yang, Chen Da-Zheng, Guo Li-Xin. High breakdown voltage lateral AlGaN/GaN high electron mobility transistor with p-GaN islands buried buffer layer for power applications. Acta Physica Sinica,
2017, 66(24): 247302.
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Guo Hai-Jun, Duan Bao-Xing, Yuan Song, Xie Shen-Long, Yang Yin-Tang. Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layer. Acta Physica Sinica,
2017, 66(16): 167301.
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Wang Kai, Xing Yan-Hui, Han Jun, Zhao Kang-Kang, Guo Li-Jian, Yu Bao-Ning, Deng Xu-Guang, Fan Ya-Ming, Zhang Bao-Shun. Growths of Fe-doped GaN high-resistivity buffer layers for AlGaN/GaN high electron mobility transistor devices. Acta Physica Sinica,
2016, 65(1): 016802.
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Wang Chong, Zhao Meng-Di, Pei Jiu-Qing, He Yun-Long, Li Xiang-Dong, Zheng Xue-Feng, Mao Wei, Ma Xiao-Hua, Zhang Jin-Cheng, Hao Yue. Enhancement mode AlGaN/GaN double heterostructure high electron mobility transistor with F plasma treatment. Acta Physica Sinica,
2016, 65(3): 038501.
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Gu Wen-Ping, Zhang Lin, Li Qing-Hua, Qiu Yan-Zhang, Hao Yue, Quan Si, Liu Pan-Zhi. Effect of neutron irradiation on the electrical properties of AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2014, 63(4): 047202.
doi: 10.7498/aps.63.047202
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Ren Jian, Yan Da-Wei, Gu Xiao-Feng. Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2013, 62(15): 157202.
doi: 10.7498/aps.62.157202
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Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue. A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2012, 61(4): 047301.
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Lü Ling, Zhang Jin-Cheng, Li Liang, Ma Xiao-Hua, Cao Yan-Rong, Hao Yue. Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2012, 61(5): 057202.
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Zhang Jin-Cheng, Mao Wei, Liu Hong-Xia, Wang Chong, Zhang Jin-Feng, Hao Yue, Yang Lin-An, Xu Sheng-Rui, Bi Zhi-Wei, Zhou Zhou, Yang Ling, Wang Hao, Yang Cui, Ma Xiao-Hua. Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors. Acta Physica Sinica,
2011, 60(1): 017205.
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Wang Chong, Quan Si, Ma Xiao-Hua, Hao Yue, Zhang Jin-Cheng, Mao Wei. High temperature annealing of enhancement-mode AlGaN/GaN high-electron-mobility transistors. Acta Physica Sinica,
2010, 59(10): 7333-7337.
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Wei Wei, Hao Yue, Feng Qian, Zhang Jin-Cheng, Zhang Jin-Feng. Geometrical optimization of AlGaN/GaN field-plate high electron mobility transistor. Acta Physica Sinica,
2008, 57(4): 2456-2461.
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Lin Ruo-Bing, Wang Xin-Juan, Feng Qian, Wang Chong, Zhang Jin-Cheng, Hao Yue. Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing. Acta Physica Sinica,
2008, 57(7): 4487-4491.
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Li Xiao, Zhang Hai-Ying, Yin Jun-Jian, Liu Liang, Xu Jing-Bo, Li Ming, Ye Tian-Chun, Gong Min. Research of breakdown characteristic of InP composite channel HEMT. Acta Physica Sinica,
2007, 56(7): 4117-4121.
doi: 10.7498/aps.56.4117
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Li Xiao, Liu Liang, Zhang Hai-Ying, Yin Jun-Jian, Li Hai-Ou, Ye Tian-Chun, Gong Min. A new small signal physical model of InP-based composite channel high electron mobility transistor. Acta Physica Sinica,
2006, 55(7): 3617-3621.
doi: 10.7498/aps.55.3617
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