[1] |
Luo Pan, Li Xiang, Sun Xue-Yin, Tan Xiao-Hong, Luo Jun, Zhen Liang. Effect of electron irradiation on perovskite films and devices for novel space solar cells. Acta Physica Sinica,
2024, 73(3): 036102.
doi: 10.7498/aps.73.20231568
|
[2] |
Yan Li-Bin, Bai Yu-Rong, Li Pei, Liu Wen-Bo, He Huan, He Chao-Hui, Zhao Xiao-Hong. First-principles calculations of point defect migration mechanisms in InP. Acta Physica Sinica,
2024, 73(18): 183101.
doi: 10.7498/aps.73.20240754
|
[3] |
Gao Xu-Dong, Yang De-Cao, Wei Wen-Jing, Li Gong-Ping. Simulation study of electron beam irradiation damage to ZnO and TiO2. Acta Physica Sinica,
2021, 70(23): 234101.
doi: 10.7498/aps.70.20211223
|
[4] |
Bai Yu-Rong, Li Yong-Hong, Liu Fang, Liao Wen-Long, He Huan, Yang Wei-Tao, He Chao-Hui. Simulation of displacement damage in indium phosphide induced by space heavy ions. Acta Physica Sinica,
2021, 70(17): 172401.
doi: 10.7498/aps.70.20210303
|
[5] |
Li Xiang-Cao, Liu Bao-An, Li Meng, Yan Chun-Yan, Ren Jie, Liu Chang, Ju Xin. Photoluminescence spectrum study of defects of potassium dihydrogen phosphate crystals irradiated by different laser fluences. Acta Physica Sinica,
2020, 69(17): 174208.
doi: 10.7498/aps.69.20200482
|
[6] |
Feng Guo-Bao, Cao Meng, Cui Wan-Zhao, Li Jun, Liu Chun-Liang, Wang Fang. Transient characteristics of discharge of polymer sample after electon-beam irradiation. Acta Physica Sinica,
2017, 66(6): 067901.
doi: 10.7498/aps.66.067901
|
[7] |
Ma Guo-Liang, Yang Jian-Qun, Li Xing-Ji, Liu Chao-Ming, Hou Chun-Feng. Tensile deformation mechanism of PE/CNTs irradiated by electrons. Acta Physica Sinica,
2016, 65(17): 178104.
doi: 10.7498/aps.65.178104
|
[8] |
Ma Guo-Liang, Li Xing-Ji, Yang Jian-Qun, Liu Chao-Ming, Hou Chun-Feng. Melting and crystallization behaviours of the electrons irradiated LDPE/MWCNTs composites. Acta Physica Sinica,
2016, 65(20): 208101.
doi: 10.7498/aps.65.208101
|
[9] |
Quan Rong-Hui, Han Jian-Wei, Zhang Zhen-Long. Macroscopic model of internal discharging in polymer under electron beam irradiation. Acta Physica Sinica,
2013, 62(24): 245205.
doi: 10.7498/aps.62.245205
|
[10] |
Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui. Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica,
2013, 62(11): 117103.
doi: 10.7498/aps.62.117103
|
[11] |
Li Jian-Hua, Zeng Xiang-Hua, Ji Zheng-Hua, Hu Yi-Pei, Chen Bao, Fan Yu-Pei. Electronic structure and optical properties of Ag-doping and Zn vacancy impurities in ZnS. Acta Physica Sinica,
2011, 60(5): 057101.
doi: 10.7498/aps.60.057101
|
[12] |
Zhou Kai, Li Hui, Wang Zhu. Defects in proton-irradiated Zn-doped GaSb studied by positron annihilation and photoluminescence. Acta Physica Sinica,
2010, 59(7): 5116-5121.
doi: 10.7498/aps.59.5116
|
[13] |
Hu Jian-Min, Wu Yi-Yong, Qian Yong, Yang De-Zhuang, He Shi-Yu. Damage of electron irradiation to the GaInP/GaAs/Ge triple-junction solar cell. Acta Physica Sinica,
2009, 58(7): 5051-5056.
doi: 10.7498/aps.58.5051
|
[14] |
Hao Xiao-Peng, Wang Bao-Yi, Yu Run-Sheng, Wei Long. Zirconium-ion implantation of zircaloy-4 investiged by slow positron beam. Acta Physica Sinica,
2007, 56(11): 6543-6546.
doi: 10.7498/aps.56.6543
|
[15] |
Zhao You-Wen, Miao Shan-Shan, Dong Zhi-Yuan, Lü Xiao-Hong, Deng Ai-Hong, Yang Jun, Wang Bo. Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property. Acta Physica Sinica,
2007, 56(9): 5536-5541.
doi: 10.7498/aps.56.5536
|
[16] |
Zhao You-Wen, Dong Zhi-Yuan. Generation and suppression of deep level defects in InP. Acta Physica Sinica,
2007, 56(3): 1476-1479.
doi: 10.7498/aps.56.1476
|
[17] |
Li Xiao, Zhang Hai-Ying, Yin Jun-Jian, Liu Liang, Xu Jing-Bo, Li Ming, Ye Tian-Chun, Gong Min. Research of breakdown characteristic of InP composite channel HEMT. Acta Physica Sinica,
2007, 56(7): 4117-4121.
doi: 10.7498/aps.56.4117
|
[18] |
Chen Zhi-Quan, Kawasuso Atsuo. Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica,
2006, 55(8): 4353-4357.
doi: 10.7498/aps.55.4353
|
[19] |
Li Xiao, Liu Liang, Zhang Hai-Ying, Yin Jun-Jian, Li Hai-Ou, Ye Tian-Chun, Gong Min. A new small signal physical model of InP-based composite channel high electron mobility transistor. Acta Physica Sinica,
2006, 55(7): 3617-3621.
doi: 10.7498/aps.55.3617
|
[20] |
Wang Zhen-Xia, Li Xue-Peng, Yu Li-Ping, Ma Yu-Gang, He Guo-Wei, Hu Gang, Chen Yi, Duan Xiao-Feng. . Acta Physica Sinica,
2002, 51(3): 620-624.
doi: 10.7498/aps.51.620
|