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Wang Ji-Guang, Li Long-Ling, Qiu Jia-Tu, Chen Xu-Min, Cao Dong-Xing. Tuning two-dimensional electron gas at LaAlO3/KNbO3 interface by strain gradient. Acta Physica Sinica,
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2020, 69(15): 157303.
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Ma Song-Song, Shu Tian-Yu, Zhu Jia-Qi, Li Kai, Wu Hui-Zhen. Recent progress on Ⅳ-Ⅵ compound semiconductor heterojunction two-dimensional electron gas. Acta Physica Sinica,
2019, 68(16): 166801.
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Li Qun, Chen Qian, Chong Jing. Variational study of the 2DEG wave function in InAlN/GaN heterostructures. Acta Physica Sinica,
2018, 67(2): 027303.
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2014, 63(8): 080202.
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2013, 62(15): 150202.
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Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi. Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots. Acta Physica Sinica,
2013, 62(20): 207303.
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2012, 61(23): 237302.
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2012, 61(2): 027103.
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2008, 57(4): 2481-2485.
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2007, 56(10): 6013-6018.
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Gao Hong-Ling, Li Dong-Lin, Zhou Wen-Zheng, Shang Li-Yan, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping. Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness. Acta Physica Sinica,
2007, 56(8): 4955-4959.
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2007, 56(7): 4143-4147.
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2007, 56(7): 4099-4104.
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Li Dong-Lin, Zeng Yi-Ping. Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors. Acta Physica Sinica,
2006, 55(7): 3677-3682.
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2006, 55(3): 1379-1383.
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Yao Wei, Qiu Zhi-Jun, Gui Yong-Sheng, Zheng Ze-Wei, Lü Jie, Tang Ning, Shen Bo, Chu Jun-Hao. Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure. Acta Physica Sinica,
2005, 54(5): 2247-2251.
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2004, 53(7): 2320-2324.
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2003, 52(4): 984-988.
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2000, 49(9): 1804-1808.
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