Demonstration of wide-bandgap GaN-based heterojunction vertical Hall sensors for high-temperature magnetic field detection

Cao Ya-Qing; Huang Huo-Lin; Sun Zhong-Hao; Li Fei-Yu; Bai Hong-Liang; Zhang Hui; Sun Nan; Yung C. Liang

doi:10.7498/aps.68.20190413

Abstract

Magnetic fields are generally sensed by a device that makes use of the Hall effect. Hall-effect sensors are widely used for proximity switching, positioning, speed detecting for the purpose of control and condition monitoring. Currently, the Hall sensor products are mainly based on the narrow-bandgap Si or GaAs semiconductor, and they are suitable for room temperature or low temperature environment, while the novel wide-bandgap GaN-based Hall sensors are more suitable for the application in various high-temperature environments. However, the spatial structure of the GaN-based sensor is mainly horizontal and hence it is only able to detect the magnetic field perpendicular to it. To detect the parallel field on the sensor surface, the vertical structure device is required despite encountering many difficulties in technology, for example reducing the vertical electric field in the two-dimensional electron gas (2-DEG) channel. The vertical Hall sensor has not been reported so far, so it is technically impossible to realize three-dimensional magnetic field detection on single chip. To address the mentioned issues, in this paper we propose a design of the vertical Hall sensor based on the wide-bandgap AlGaN/GaN heterojunction material, which adopts a shallow etching of 2-DEG channel barrier to form a locally trenched structure. The material parameters and physical models of the proposed device are first calibrated against real device test data, and then the key structural parameters such as device electrode spacing ratio, mesa width and sensing electrode length are optimized by using technology computer aided design, and the device characteristics are analyzed. Finally, the simulation results confirm that the proposed Hall sensor has a higher sensitivity of magnetic field detection and lower temperature drift coefficient ($\sim $600 ppm/K), and the device can work stably in a high-temperature (greater than 500 K) environment. Therefore, the vertical and horizontal devices can be fabricated simultaneously on the same wafer in the future, thus achieving a three-dimensional magnetic field detection in various high-temperature environments.

Keywords:

Authors and contacts

1.
School of Optoelectronic Engineering and Instrumentation Science, Dalian University of Technology, Dalian 116024, China
2.
School of Physics, Dalian University of Technology, Dalian 116024, China
3.
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260, Singapore

Corresponding author: Huang Huo-Lin, hlhuang@dlut.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 51607022) and the Fundamental Research Funds for the Central Universities, China (Grant No. DUT17LK13).

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References

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[2]	Nama T, Gogoi A K, Tripathy P 2017 2017 IEEE International Symposium on Robotics and Intelligent Sensors (IRIS) Ottawa, Canada, October 5−7, 2017 p208
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[18]	Nifa I, Leroux C, Torres A, Charles M, Blachier D, Reimbold G, Ghibaudo G, Bano E 2017 Microelectron. Eng. 178 128 Google Scholar
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[20]	Abderrahmane A, Tashiro T, Takahashi H, Ko P J, Okada H, Sato S, Ohshima T, Sandhu A 2014 Appl. Phys. Lett. 104 023508 Google Scholar
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[26]	Popovic R S 2003 Hall Effect Devices (Vol. 2) (London: Institute of Physics Publishing) pp179−242
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[29]	Riccobene C, Wachutka G, Burgler J, Baltes H 1994 IEEE Trans. Electron Dev. 41 32
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[34]	Zhao X, Bai Y, Deng Q, Ai C, Yang X, Wen D 2017 IEEE Sens. J. 17 5849 Google Scholar
[35]	Kejik P, Schurig E, Bergsma F, Popovic R S 2005 The 13th International Conference on Solid-State Sensors Seoul, Korea, June 5–9, 2005 p317
[36]	Yamamura T, Nakamura D, Higashiwaki M, Matsui T, Sandhu A 2006 J. Appl. Phys. 99 08B302

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图 1 基于GaN基异质结结构的垂直型霍尔传感器结构 (a)剖面图; (b)俯视图

Figure 1. Schematic diagram of GaN-based vertical Hall sensor: (a) Sectional and (b) top views.

DownLoad: Full-Size Img PowerPoint

图 2 器件仿真数据与实验转移特性结果进行对比的器件参数校准过程^[31]

Figure 2. Comparisons of simulated I_DS-V_GS characteristics of the Hall sensor with the experimental data.

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图 3 2-DEG沟道界面下方电子浓度分布与势垒层剩余厚度的关系

Figure 3. Profiles of 2-DEG concentration vs. AlGaN barrier thickness.

DownLoad: Full-Size Img PowerPoint

图 4 霍尔电压(或2-DEG电子浓度)与势垒层剩余厚度的关系

Figure 4. Hall voltage (or 2-DEG concentration) vs. AlGaN barrier thickness.

DownLoad: Full-Size Img PowerPoint

图 5 当d = 7 nm时, 传感器电流密度空间分布对比　(a)无外加磁场; (b)外加磁场B = 1 T

Figure 5. Comparisons of current density distribution in vertical Hall sensor with d = 7 nm under the conditions of (a) B = 0 and (b) B = 1 T.

DownLoad: Full-Size Img PowerPoint

图 6 电流相关敏感度S_I与L₂/L₁比值的关系

Figure 6. Current-related sensitivity as a function of the ratio of L₂/L₁.

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图 7 电流相关敏感度S_I(或输入电阻R_in)与感测电极长度l₂的关系

Figure 7. Current-related sensitivity and input resistance as a function of the l₂.

DownLoad: Full-Size Img PowerPoint

图 8 电流相关敏感度(或输入电阻)与器件宽度w的关系

Figure 8. Current-related sensitivity and input resistance as a function of the w.

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图 9 器件输出电压随磁场和工作温度的变化

Figure 9. Temperature dependence of output Hall voltage as a function of magnetic induction.

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图 10 电流相关敏感度随工作温度的变化

Figure 10. Current-related sensitivity as a function of temperature.

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表 1 仿真中所用的典型器件物理参数

Table 1. Summary of physical parameters adopted in the simulations.

物理参数	单位	GaN	AlN
禁带宽度 E_g	eV	3.4	6.2
电子亲和能χ	V	3.4	1.9
相对介电常数$\epsilon $	—	9.4	8.8
迁移率 μ	cm²/(V·s)	1310	300
电子饱和速率 v_sat	cm/s	1.8 × 10⁷	1.3 × 10⁷
电子发射截面 σ⁰_n	cm²	1.0 × 10^–15	1.0 × 10^–15
导带状态密度 N_c	cm^–3	2.7 × 10¹⁸	4.1 × 10¹⁸
价带状态密度 N_v	cm^–3	2.5 × 10¹⁹	2.8 × 10²⁰
热导率 κ	W/(cm·K)	1.3	2.9

DownLoad: CSV

表 2 基于不同材料的霍尔传感器关键性能指标对比

Table 2. Comparisons of key performances of Hall sensors based on various materials.

器件类别	工作温度/K	温漂系数S_T/ppm·K^–1	灵敏度S_I/V·(A·T)^–1
Si基垂直型^[33]	T < 350	$\sim $1000	41 (x方向)
Si基垂直型^[34]	T < 350	4545	77.5 (x方向)
Si基垂直型^[35]	T < 350	1500	N/A
InAs/AlGaSb水平型^[7]	T < 400	1710	250
InAs/AlGaSb水平型^[7]	T < RT	2690	302
AlGaN/GaN水平型^[19]	T > 400	$\sim $1000	113
AlGaN/GaN水平型^[36]	T > 400	820	46
AlGaN/GaN垂直型(本文)	T > 500	$\sim $600	75.7 (w = 3 μm)
AlGaN/GaN垂直型(本文)	T > 500	$\sim $600	113.7 (w = 2 μm)

DownLoad: CSV

[1]	Boero G, Demierre M, Besse P A, Popovic R S 2003 Sens. Actuator A: Phys. 106 314 Google Scholar
[2]	Nama T, Gogoi A K, Tripathy P 2017 2017 IEEE International Symposium on Robotics and Intelligent Sensors (IRIS) Ottawa, Canada, October 5−7, 2017 p208
[3]	Roumenin C, Dimitrov K, Ivanov A 2001 Sens. Actuator A: Phys. 92 119 Google Scholar
[4]	Dimitrov K 2007 Measurement 40 816 Google Scholar
[5]	黄乐, 张志勇, 彭练矛 2017 物理学报 66 218501 Google Scholar Huang L, Zhang Z Y, Peng L M 2017 Acta Phys. Sin. 66 218501 Google Scholar
[6]	Bilotti A, Monreal G, Vig R 1997 IEEE J. Solid-State Circuit. 32 829 Google Scholar
[7]	Behet M, Bekaert J, de Boeck J, Borghs G 2000 Sens. Actuator A: Phys. 81 13 Google Scholar
[8]	Kunets V P, Easwaran S, Black W T, Guzun D, Mazur Y I, Goel N, Mishima T D, Santos M B, Salamo G J 2009 IEEE Trans. Electron Dev. 56 683
[9]	Koide S, Takahashi H, Abderrahmane A, Shibasaki I, Sandhu A 2012 J. Phys.: Conf. Ser. 352 012009 Google Scholar
[10]	Hassan A, Ali M, Savaria Y, Sawan M 2019 Microelectron. J. 84 129 Google Scholar
[11]	Li L, Chen J, Gu X, Li X, Pu T, Ao J-P 2018 Superlattice Microst. 123 274 Google Scholar
[12]	Alim M A, Rezazadeh A A, Gaquiere C, Crupi G 2019 Semicond. Sci. Technol. 34 035002 Google Scholar
[13]	Dowling K M, Alpert H S, Yalamarthy A S, Satterthwaite P F, Kumar S, Köck H, Ausserlechner U, Senesky D G 2019 IEEE Sens. Lett. 3 2500904 Google Scholar
[14]	唐文昕, 郝荣晖, 陈扶, 于国浩, 张宝顺 2018 物理学报 67 198501 Google Scholar Tang W X, Hao R H, Chen F, Yu G H, Zhang B S 2018 Acta Phys. Sin. 67 198501 Google Scholar
[15]	Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F, Dimitrov R, Mitchell A, Stutzmann M 2000 J. Appl. Phys. 87 334 Google Scholar
[16]	Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J 1999 J. Appl. Phys. 85 3222 Google Scholar
[17]	Abderrahmane A, Koide S, Sato S I, Ohshima T, Sandhu A, Okada H 2012 IEEE Trans. Magn. 48 4421 Google Scholar
[18]	Nifa I, Leroux C, Torres A, Charles M, Blachier D, Reimbold G, Ghibaudo G, Bano E 2017 Microelectron. Eng. 178 128 Google Scholar
[19]	White T P, Shetty S, Ware M E, Mantooth H A, Salamo G J 2018 IEEE Sens. J. 18 2944 Google Scholar
[20]	Abderrahmane A, Tashiro T, Takahashi H, Ko P J, Okada H, Sato S, Ohshima T, Sandhu A 2014 Appl. Phys. Lett. 104 023508 Google Scholar
[21]	Heidari H, Bonizzoni E, Gatti U, Maloberti F, Dahiya R 2016 IEEE Sens. J. 16 8736 Google Scholar
[22]	Kaufmann T, Vecchi M C, Ruther P, Paul O 2012 Sensor. Actuat. A: Phys. 178 1 Google Scholar
[23]	黄杨, 徐跃, 郭宇锋 2015 半导体学报 36 124006 Huang Y, Xu Y, Guo Y 2015 J. Semicond. 36 124006
[24]	Popovic R S 1984 IEEE Electron Dev. Lett. 5 357 Google Scholar
[25]	Pascal J, Hebrard L, Kammerer J B, Frick V, Blonde J P 2007 IEEE Sensors 2007 Conference Atlanta, GA, USA, October 28–31, 2007 p1480
[26]	Popovic R S 2003 Hall Effect Devices (Vol. 2) (London: Institute of Physics Publishing) pp179−242
[27]	Allegretto W, Nathan A, Baltes H 1991 IEEE Trans. Comput.: Aided Des. Integr. Circuits Syst. 10 501 Google Scholar
[28]	Riccobene C, Gartner K, Wachutka G, Baltes H, Fichtner W 1994 IEEE International Electron Devices Meeting San Francisco, CA, USA, December 11−14, 1994 p727
[29]	Riccobene C, Wachutka G, Burgler J, Baltes H 1994 IEEE Trans. Electron Dev. 41 32
[30]	Farahmand M, Garetto C, Bellotti E, Brennan K F, Goano M, Ghillino E, Ghione G, Albrecht J D, Ruden P P 2001 IEEE Trans. Electron Dev. 48 535 Google Scholar
[31]	Anderson T J, Tadjer M J, Mastro M A, Hite J K, Hobart K D, Eddy C R, Kub F J 2010 J. Electron. Mater. 39 478 Google Scholar
[32]	Consejo C, Contreras S, Konczewicz L, Lorenzini P, Cordier Y, Skierbiszewski C, Robert J L 2005 Phys. Stat. Sol. (c) 2 1438 Google Scholar
[33]	Roumenin C S, Nikolov D, Ivanov A 2004 Sensor. Actuat. A: Phys. 115 303 Google Scholar
[34]	Zhao X, Bai Y, Deng Q, Ai C, Yang X, Wen D 2017 IEEE Sens. J. 17 5849 Google Scholar
[35]	Kejik P, Schurig E, Bergsma F, Popovic R S 2005 The 13th International Conference on Solid-State Sensors Seoul, Korea, June 5–9, 2005 p317
[36]	Yamamura T, Nakamura D, Higashiwaki M, Matsui T, Sandhu A 2006 J. Appl. Phys. 99 08B302

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