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Based on strained silicon metal-oxide semiconductor field transistor (MOSFET) structure, the distribution of surface potential is obtained by solving two-dimensional Poisson equation, and the threshold voltage model is built. According to calculation results, the dependence of threshold voltage on germanium content of relaxed Si1-βGeβ, channel length, voltage of drain, doping content of substrate and channel are studied in detail, and the influence of drain-induced barrier-lowering on scaled strained silicon MOSFET is obtained, which can provide important reference for the design of strained silicon MOSFET device and circuit.
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Keywords:
- strained Si metal-oxide semiconductor field transistor /
- drain-induced barrier-lowering /
- two-dimensional Poisson equation /
- threshold voltage model
[1] Dhar S, Kosina H, Selberherrr S 2005 IEEE Trans. Electron Dev. 52 527
[2] Nelson S F, Iamail K, Chu J O, Meyerson B S 1993 Appl. Phys. Lett. 63 367
[3] Chan V, Rim K, Ieong M, Yang S, Malik R, Teh Y W, Yang M, Ouyang Q Q 2005 IEEE Custom Integrated Circuits Conference p667
[4] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin.Phys. 16 3827
[5] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys.Sin. 57 5918 (in Chinese)[宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 物理学报 57 5918]
[6] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣、 崔晓英、 胡辉勇、 戴显英、 宣荣喜 2007 物理学报 56 3504] 〖7] Ouyang Q Q, Chen X D, Mudanai S P, Wang X, Kencke D L, Tasch A F, Register L F, Banerjee S K 2000 IEEE Trans. Electron Dev. 47 1943
[7] Chamberlain S G, Ramanan S 1986 IEEE Trans. Electron Dev. 33 1745
[8] Deen M J, Yan Z X 1990 IEEE Trans. Electron Dev. 37 1707
[9] Troutman R R 1979 IEEE Trans. Electron Dev. 26 461
[10] Eitan B, Frohman-Bentchkowsky D 1982 IEEE Trans. Electron Dev. 29 254
[11] Liu S, Nage L W 1982 IEEE J. Solid Circuit 17 983
[12] Balamurugan N B, Sankaranarayanan K, Suguna M, Balasubadra K, Kalaivani 2007 IEEE-ICSCN p382
[13] Abe S, Miyazawa Y, Nakajima Y, Hanajiri T, Toyabe T, Sugano T 2009 IEEE ULIS 329
[14] Mahato1 S S, Chakraborty1 P, Maiti T K, Bera M K, Mahata C M, Sengupta, Chakraborty A, Sarkar S K, Maiti C K 2008 IEEE Conferences p1
[15] Deen M J, Yan Z X 1992 IEEE Trans. Electron Dev. 39 908
[16] Nayfeh H M, Hoyt J L, Antoniadis D A 2004 IEEE Trans. Electron Dev. 51 2069
[17] Tsang Y L, Chattopadhyay S, Uppal S, Escobedo-Cousin E, Ramakrishnan H K, Olsen S H, O’Neill A G 2007 IEEE Trans. Electron Dev. 54 3040
[18] Hao Y, Liu H X 2008 Reliability and Failure Mechamism of Micro-Namo Mos Device (Beijing: Science Press) p403 (in Chinese) [郝 跃、 刘红侠 2008 微纳米MOS器件可靠性与失效机理(北京: 科学出版社) p403]
[19] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese)[张志锋、张鹤鸣、胡辉勇、宣荣喜、宋建军 2009 物理学报 58 4948]
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[1] Dhar S, Kosina H, Selberherrr S 2005 IEEE Trans. Electron Dev. 52 527
[2] Nelson S F, Iamail K, Chu J O, Meyerson B S 1993 Appl. Phys. Lett. 63 367
[3] Chan V, Rim K, Ieong M, Yang S, Malik R, Teh Y W, Yang M, Ouyang Q Q 2005 IEEE Custom Integrated Circuits Conference p667
[4] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin.Phys. 16 3827
[5] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys.Sin. 57 5918 (in Chinese)[宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 物理学报 57 5918]
[6] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣、 崔晓英、 胡辉勇、 戴显英、 宣荣喜 2007 物理学报 56 3504] 〖7] Ouyang Q Q, Chen X D, Mudanai S P, Wang X, Kencke D L, Tasch A F, Register L F, Banerjee S K 2000 IEEE Trans. Electron Dev. 47 1943
[7] Chamberlain S G, Ramanan S 1986 IEEE Trans. Electron Dev. 33 1745
[8] Deen M J, Yan Z X 1990 IEEE Trans. Electron Dev. 37 1707
[9] Troutman R R 1979 IEEE Trans. Electron Dev. 26 461
[10] Eitan B, Frohman-Bentchkowsky D 1982 IEEE Trans. Electron Dev. 29 254
[11] Liu S, Nage L W 1982 IEEE J. Solid Circuit 17 983
[12] Balamurugan N B, Sankaranarayanan K, Suguna M, Balasubadra K, Kalaivani 2007 IEEE-ICSCN p382
[13] Abe S, Miyazawa Y, Nakajima Y, Hanajiri T, Toyabe T, Sugano T 2009 IEEE ULIS 329
[14] Mahato1 S S, Chakraborty1 P, Maiti T K, Bera M K, Mahata C M, Sengupta, Chakraborty A, Sarkar S K, Maiti C K 2008 IEEE Conferences p1
[15] Deen M J, Yan Z X 1992 IEEE Trans. Electron Dev. 39 908
[16] Nayfeh H M, Hoyt J L, Antoniadis D A 2004 IEEE Trans. Electron Dev. 51 2069
[17] Tsang Y L, Chattopadhyay S, Uppal S, Escobedo-Cousin E, Ramakrishnan H K, Olsen S H, O’Neill A G 2007 IEEE Trans. Electron Dev. 54 3040
[18] Hao Y, Liu H X 2008 Reliability and Failure Mechamism of Micro-Namo Mos Device (Beijing: Science Press) p403 (in Chinese) [郝 跃、 刘红侠 2008 微纳米MOS器件可靠性与失效机理(北京: 科学出版社) p403]
[19] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese)[张志锋、张鹤鸣、胡辉勇、宣荣喜、宋建军 2009 物理学报 58 4948]
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