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2023, 72(16): 167101.
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Hao Guo-Qiang, Zhang Rui, Zhang Wen-Jing, Chen Na, Ye Xiao-Jun, Li Hong-Bo. Regulation and control of Schottky barrier in graphene/MoSe2 heteojuinction by asymmetric oxygen doping. Acta Physica Sinica,
2022, 71(1): 017104.
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Deng Xu-Liang, Ji Xian-Fei, Wang De-Jun, Huang Ling-Qin. First principle study on modulating of Schottky barrier at metal/4H-SiC interface by graphene intercalation. Acta Physica Sinica,
2022, 71(5): 058102.
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Ding Hua-Jun, Xue Zhong-Ying, Wei Xing, Zhang Bo. Effects of ultra-thin aluminium interlayer on Schottky barrier parameters of NiGe/n-type Ge Schottky barrier diode. Acta Physica Sinica,
2022, 71(20): 207302.
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Zhang Fang, Jia Li-Qun, Sun Xian-Ting, Dai Xian-Qi, Huang Qi-Xiang, Li Wei. Tuning Schottky barrier in graphene/InSe van der Waals heterostructures by electric field. Acta Physica Sinica,
2020, 69(15): 157302.
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2018, 67(21): 217802.
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Wu Kong-Ping, Sun Chang-Xu, Ma Wen-Fei, Wang Jie, Wei Wei, Cai Jun, Chen Chang-Zhao, Ren Bin, Sang Li-Wen, Liao Mei-Yong. Interface electronic structure and the Schottky barrier at Al-diamond interface: hybrid density functional theory HSE06 investigation. Acta Physica Sinica,
2017, 66(8): 088102.
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2013, 62(17): 177302.
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Zhao Shou-Ren, Huang Zhi-Peng, Sun Lei, Sun Peng-Chao, Zhang Chuan-Jun, Wu Yun-Hua, Cao Hong, Wang Shan-Li, Chu Jun-Hao. A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells. Acta Physica Sinica,
2013, 62(16): 168801.
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Shi Da-Wei, Wu Mei-Ling, Yang Chang-Ping, Ren Chun-Ling, Xiao Hai-Bo, Wang Kai-Ying. AC properties of Pr0.7Ca0.3MnO3 ceramics. Acta Physica Sinica,
2013, 62(2): 026201.
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Zou Zhi-Yu, Liu Xiao-Fang, Zeng Min, Yang Bai, Yu Rong-Hai, Jiang He, Tang Rui-He, Wu Zhang-Ben. Morphology control of gold nanoparticles on glass surface realized by electric field assisted dissolution method. Acta Physica Sinica,
2012, 61(10): 104208.
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Zhang Yuan, Wang Lu-Xia. Theoretical study of inelastic current in molecularnano-junction excited by infrared field. Acta Physica Sinica,
2011, 60(4): 047304.
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Xiu Ming-Xia, Ren Jun-Feng, Wang Yu-Mei, Yuan Xiao-Bo, Hu Gui-Chao. Effect of Schottky barrier on spin injection in ferromagnetic/organic semiconductor structure. Acta Physica Sinica,
2010, 59(12): 8856-8861.
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Jiang Zhong-Wei, Wang Wen-Xin, Gao Han-Chao, Li Hui, He Tao, Yang Cheng-Liang, Chen Hong, Zhou Jun-Ming. Effect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots. Acta Physica Sinica,
2009, 58(1): 471-476.
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Yang Xue-Wen, Zheng Jia-Gui, Zhang Jing-Quan, Feng Liang-Huan, Cai Wei, Cai Ya-Ping, Li Wei, Li Bing, Lei Zhi, Wu Li-Li. Characteristics of CdTe solar cell device. Acta Physica Sinica,
2006, 55(5): 2504-2507.
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Guo Ru-Hai, Shi Hong-Yan, Sun Xiu-Dong. The calculation of strain distribution in quantum dots with Green method. Acta Physica Sinica,
2004, 53(10): 3487-3492.
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Zhu Yun, Wang Tai-Hong. Investigations of three-terminal electronic measurement on quantum dot devices. Acta Physica Sinica,
2003, 52(3): 677-682.
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2002, 51(6): 1355-1359.
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LI HONG-WEI, WANG TAI-HONG. CORRELATED DISCHARGING OF InAs QUANTUM DOTS IN METAL-SEMICONDUCTOR-METAL STRUCTURE. Acta Physica Sinica,
2001, 50(10): 2038-2043.
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LI HONG-WEI, WANG TAI-HONG. CURRENT TRANSPORT PROPERTIES OF GaAs SCHOTTKY DIODE CONTAINING InAs SELF-ASSEMBLED QUANTUM DOTS. Acta Physica Sinica,
2001, 50(2): 262-267.
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