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Theoretically we have studied the current spin polarization in the structure of ferromagnetic/organic semiconductor under Schottky contact and discussed its variations with potential barrier height, the special carriers in organic semiconductor layer and the its mobilities, doping concentration near the interface. The calculations show that the high mobilities of the carriers in organic semiconductors are conducive to the spin injection. We also find that a significant depletion region at Schottky contact is highly undesirable for spin injection. For an efficient spin injection, the depletion region near the interface should be heavily doped and the effective barrier height should be restricted wichin certain range.
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Keywords:
- organic spin injection /
- Schottky barrier /
- current spin polarization
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[11] Xie S J, Ahn K H, Smith D L, Bishop A R, Saxena A 2003 Phys. Rev. B 67 125202
[12] Yunus M, Ruden P P, Smith D L 2008 J. Appl. Phys. 103 103714
[13] Ren J F, Fu J Y, Liu D S, Mei L M, Xie S J 2005 J. Appl. Phys. 98 074503
[14] Ren J F, Fu J Y, Liu D S, Xie S J 2004 Acta Phys. Sin. 53 188(in Chinese) [任俊峰、付吉永、刘德胜、解士杰 2004 物理学报 53 188]
[15] Mi Y L, Zhang M, Yan H 2008 Phys. Lett. A 372 6434
[16] Wang L X, Zhang D C, Liu D S, Han S H, Xie S J 2003 Acta Phys. Sin. 52 2547 (in Chinese) [王鹿霞、张大成、刘德胜、韩圣浩、解士杰 2003 物理学报 52 2547]
[17] Wang L X, Liu D S, Zhang D C, Xie S J, Han S H, Mei L M 2005 Chin. Phys. 14 186
[18] Liu X J, Gao K, Li Y, Wei J H, Xie S J 2007 Chin. Phys. 16 1
[19] Ren J F, Zhang Y B, Xie S J 2007 Acta Phys. Sin. 56 4785 (in Chinese) [任俊峰、 张玉滨、解士杰 2007 物理学报 56 4785]
[20] Albrecht J D, Smith D L 2002 Phys. Rev. B 66 113303
[21] Ruden P P, Smith D L 2004 J. Appl. Phys. 95 9
[22] Smith D L, Ruden P P 2008 Phys. Rev. B 78 125202
[23] Chantis A N, Smith D L 2008 Phys. Rev. B 78 235317
-
[1] Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, Molnr S V, Roukes M L, Chtchelkanova A Y, Treger D M 2001 Science 294 1488
[2] Zutic I, Fabian J, Sarma S D 2004 Rev. Mod. Phys. 76 323
[3] Sanada H, Arata I, Ohno Y, Chen Z, Kayanuma K, Oka Y, Matsukura F, Ohno H 2002 Appl. Phys. Lett. 81 2788
[4] Orundler D 2000 Phys.Rev.Lett. 84 6074
[5] Voss D 2000 Nature 407 442
[6] Naber W J M, Faez S, Gvan der Wie W 2007 J. Phys. D 40 R205
[7] Dediu V, Murgia M, Matacotta F C, Taliani C, Barbanera S 2002 Solid State Commun.122 181
[8] Xiong Z H, Wu D, Vardeny Z V, Shi J 2004 Nature 427 821
[9] Dediu V, Hueso L E, Bergenti I, Riminucci A, Borgatti F, Graziosi P, Newby C, Casoli F, De Jong M P, Taliani C, Zhan Y 2008 Phys. Rev. B 78 115203
[10] Zhang Y Q, Liu X J, Carlegrim E, Li F H, Bergenti I, Graziosi P, Dediu V, Fahlman M 2009 Appl. Phys. Lett. 94 053301
[11] Xie S J, Ahn K H, Smith D L, Bishop A R, Saxena A 2003 Phys. Rev. B 67 125202
[12] Yunus M, Ruden P P, Smith D L 2008 J. Appl. Phys. 103 103714
[13] Ren J F, Fu J Y, Liu D S, Mei L M, Xie S J 2005 J. Appl. Phys. 98 074503
[14] Ren J F, Fu J Y, Liu D S, Xie S J 2004 Acta Phys. Sin. 53 188(in Chinese) [任俊峰、付吉永、刘德胜、解士杰 2004 物理学报 53 188]
[15] Mi Y L, Zhang M, Yan H 2008 Phys. Lett. A 372 6434
[16] Wang L X, Zhang D C, Liu D S, Han S H, Xie S J 2003 Acta Phys. Sin. 52 2547 (in Chinese) [王鹿霞、张大成、刘德胜、韩圣浩、解士杰 2003 物理学报 52 2547]
[17] Wang L X, Liu D S, Zhang D C, Xie S J, Han S H, Mei L M 2005 Chin. Phys. 14 186
[18] Liu X J, Gao K, Li Y, Wei J H, Xie S J 2007 Chin. Phys. 16 1
[19] Ren J F, Zhang Y B, Xie S J 2007 Acta Phys. Sin. 56 4785 (in Chinese) [任俊峰、 张玉滨、解士杰 2007 物理学报 56 4785]
[20] Albrecht J D, Smith D L 2002 Phys. Rev. B 66 113303
[21] Ruden P P, Smith D L 2004 J. Appl. Phys. 95 9
[22] Smith D L, Ruden P P 2008 Phys. Rev. B 78 125202
[23] Chantis A N, Smith D L 2008 Phys. Rev. B 78 235317
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