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Gou Shi-Long, Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Sheng Jiang-Kun, Xue Yuan-Yuan, Pan Chen. Radiation mechanism of gate-controlled lateral PNP bipolar transistors in the hydrogen environment. Acta Physica Sinica,
2021, 70(15): 156101.
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Zhu Wei-Wei, Zhang Qiu-Ju, Zhang Yan-Hui, Jiao Yang. Motion-induced X-ray and terahertz radiation of electrons captured in laser standing wave. Acta Physica Sinica,
2015, 64(12): 124104.
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Sun Peng, Du Lei, Chen Wen-Hao, He Liang. A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation1/f noise. Acta Physica Sinica,
2012, 61(6): 067801.
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Sun Peng, Du Lei, Chen Wen-Hao, He Liang, Zhang Xiao-Fang. A radiation degradation model of metal-oxide-semiconductor field effect transistor. Acta Physica Sinica,
2012, 61(10): 107803.
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Gao Bo, Liu Gang, Wang Li-Xin, Han Zheng-Sheng, Zhang Yan-Fei, Wang Chun-Ling, Wen Jing-Chao. Research on the total dose effects for domestic VDMOS devices used in satellite. Acta Physica Sinica,
2012, 61(17): 176107.
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Zhang Fa-Qiang, Wang Zhen, Xu Ze-Ping, Jiang Shi-Lun, V. P. Smirnov, Ning Jia-Min, Li Lin-Bo, Zhou Xiu-Wen, E. V. Grabovsky, G. M. Oleynic, V. V. Alexandrov, Ding Ning, Xu Rong-Kun, Li Zheng-Hong, Yang Jian-Lun. New results of Sino-Russian joint Z-pinch experiments. Acta Physica Sinica,
2011, 60(4): 045208.
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Ding Ning, Wu Ji-Ming, Dai Zi-Huan, Zhang Yang, Yin Li, Yao Yan-Zhong, Sun Shun-Kai, Ning Cheng, Shu Xiao-Jian. Numerical simulation analysis of Z-pinch implosion using MARED code. Acta Physica Sinica,
2010, 59(12): 8707-8716.
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Chen Wei-Hua, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Zhang Tian-Fu, Zhang Xue. A model considering the ionizing radiation effects in MOS structure. Acta Physica Sinica,
2009, 58(6): 4090-4095.
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Lin Ruo-Bing, Wang Xin-Juan, Feng Qian, Wang Chong, Zhang Jin-Cheng, Hao Yue. Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing. Acta Physica Sinica,
2008, 57(7): 4487-4491.
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Ning Cheng, Ding Ning, Yang Zhen-Hua. Physical analysis of the certain results in Z-pinch experiments on the “Qiang Guang-I” generator. Acta Physica Sinica,
2007, 56(1): 338-345.
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Li Rui-Min, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin. A 1/f noise based research of radiation induced interface trap buildup process. Acta Physica Sinica,
2007, 56(6): 3400-3406.
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Wang Wei, Zhang Jie, Zhao Gang. Simulation of the effects of X-ray emission from accretion disks on the interstellar materials. Acta Physica Sinica,
2006, 55(1): 287-293.
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Li Zhong-He, Liu Hong-Xia, Hao Yue. Mechanism of NBTI degradation in ultra deep submicron PMOSFET’s. Acta Physica Sinica,
2006, 55(2): 820-824.
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Zhou Chun-Hong, Zheng You-Dou, Deng Yong-Zhen, Kong Yue-Chan, Chen Peng, Xi Dong-Juan, Gu Shu-Lin, Shen Bo, Zhang Rong, Jiang Ruo-Lian, Han Ping, Shi Yi. Study of interface trap states of AlN-Si(111) heterostructure*. Acta Physica Sinica,
2004, 53(11): 3888-3894.
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Ning Cheng, Yang Zhen-Hua, Ding Ning. Numerical studies of neon gas-puff Z-pinch dynamic processes. Acta Physica Sinica,
2003, 52(7): 1650-1655.
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Ning Cheng, Yang Zhen-Hua, Ding Ning. Studies on the mechanism of energy transformation in implosion processes of the Z-pinches. Acta Physica Sinica,
2003, 52(2): 415-420.
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