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2022, 71(16): 168101.
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Gou Shi-Long, Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Sheng Jiang-Kun, Xue Yuan-Yuan, Pan Chen. Radiation mechanism of gate-controlled lateral PNP bipolar transistors in the hydrogen environment. Acta Physica Sinica,
2021, 70(15): 156101.
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2017, 66(24): 246801.
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2017, 66(8): 086801.
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2014, 63(15): 155201.
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2013, 62(21): 214702.
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2012, 61(10): 107803.
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2012, 61(6): 067801.
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2012, 61(6): 062801.
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2012, 61(21): 217305.
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Lin Ruo-Bing, Wang Xin-Juan, Feng Qian, Wang Chong, Zhang Jin-Cheng, Hao Yue. Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing. Acta Physica Sinica,
2008, 57(7): 4487-4491.
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2008, 57(3): 1872-1877.
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2007, 56(6): 3400-3406.
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2004, 53(3): 936-941.
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JIA WEI-YI, ZHANG PENG-XIANG. ON THE OPTIMUM COMPENSATION OF THE TEMPERATURE INSTABILITIES CAUSED BY THE MAGNETOCRYSTALLINE ANISOTROPY FIELD IN YIG MICROWAVE DEVICES. Acta Physica Sinica,
1976, 25(3): 254-264.
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