Hydrogen soaking irradiation acceleration method: application to and damage mechanism analysis on 3DG111 transistors

Zhao Jin-Yu; Yang Jian-Qun; Dong Lei; Li Xing-Ji

doi:10.7498/aps.68.20181992

Abstract

Bipolar devices are extremely sensitive to ionization effects, and their low dose rate radiation damage is more serious than their high dose rate radiation damage, which phenomenon is especially named enhanced low dose rate sensitivity. In the actual space radiation environment, the radiation dose rate of the device is extremely low. Currently, the enhanced low dose rate sensitivity effect has become a key factor of evaluating the reliability of spacecraft and its electronic systems, due to the fact that the low dose rate irradiation test needs longer time. The method to speed up the test on the ground is one of the hottest topics in this research area. In recent years, some researches have suggested that the use of hydrogen immersion irradiation for accelerating the test can simulate low dose rate radiation damage to some extent, but the damage mechanism has not been analyzed in detail. In this paper, the mechanisms of electrical properties and deep level defects for the 3DG111 transistor by ⁶⁰Co gamma ray under high and low dose rates in the cases with and without hydrogen are investigated. In order to analyze the damage mechanism of bipolar junction transistor, the excess base current and deep level transient spectrum are measured by using semiconductor parameter analyzer and deep level transient spectroscopy. The experimental results show that the current gain degradation of 3DG111 transistor is more serious under low dose rate radiation than under high dose rate radiation, at the same time, the excess base current of transistor increases significantly. This shows that in the device there appears the enhanced low dose rate sensitivity. Under both high dose rate radiation and low dose rate irradiation, the radiation damage defects are the traps for both oxide positive charge and interface state. Under the low dose rate irradiation, there are two main reasons for the increase in transistor damage. First, the oxide charge concentration increases under low dose rate irradiation, and the oxide charge and interface state energy levels move toward the middle band. Eventually, the space charge region recombination of the transistor is intensified, and thus causing the excessive base current of the transistor to increase and transistor performance to degrade. The comparison shows that the number and type of defects under the high dose rate irradiation are the same as those under the low dose rate irradiation. Based on the analysis, the hydrogen treatment can be used as an effective method of accelerating the assessment of radiation damage enhancement effect at low dose rates.

Keywords:

Authors and contacts

Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China

Corresponding author: Li Xing-Ji, lxj0218@hit.edu.cn

Funds: Project supported by the Science Challenge Project, China (Grant No. TZ2018004) and the Foundation of Science and Technology on Analog Integrated Circuit Laboratory, China (Grant No. 6142802WD201803).

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References

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Cited By

图 1 开帽处理后经$\gamma $射线辐照晶体管电流增益倒数变化量与未处理直接辐照对比

Figure 1. Comparison of $\Delta (1/\beta )$ of $\gamma $-ray irradiated transistor after open cap treatment with untreated.

DownLoad: Full-Size Img PowerPoint

图 2 高剂量率辐照条件下未经氢气浸泡的晶体管的Gummel曲线　(a)基极电流; (b)集电极电流

Figure 2. Gummel curve of a transistor that has not been treated with hydrogen at high dose rates: (a) Base current; (b) collector current.

DownLoad: Full-Size Img PowerPoint

图 3 氢气浸泡再经$\gamma $射线辐照后晶体管电流增益倒数变化量与未经处理辐照样品对比

Figure 3. Comparison of $\varDelta (1/\beta )$ with/without hydrogen treated sample under $\gamma $-ray irradiated.

DownLoad: Full-Size Img PowerPoint

图 4 高低剂量率辐照条件下3DG111晶体管过剩基极电流对比

Figure 4. Comparison of excess base current of 3DG111 transistors at high and low dose rates.

DownLoad: Full-Size Img PowerPoint

图 5 氢气浸泡预处理与未经处理晶体管辐照后过剩基极电流对比

Figure 5. Comparison of excess base current of a transistor after irradiation with/without hydrogen-immersion pretreatment.

DownLoad: Full-Size Img PowerPoint

图 6 氢气浸泡预处理与未经处理晶体管辐照后DLTS曲线对比

Figure 6. Comparison of DLTS curves of a transistor with/without hydrogen-immersion pretreatment.

DownLoad: Full-Size Img PowerPoint

图 7 辐照中的SiO₂中的空穴传输、俘获和质子释放的示意图^[24]

Figure 7. Schematic illustration of hole transport, trapping and proton release in SiO₂ irradiated^[24].

DownLoad: Full-Size Img PowerPoint

表 1 氢气浸泡预处理与未经处理晶体管辐照后缺陷参数对比

Table 1. Comparison of defect parameters of a transistor with/without hydrogen-immersion pretreatment.

处理条件	氧化物电荷			界面态
处理条件	能级位置 E_C – E_T/eV	俘获截面 $\sigma $/cm²	缺陷浓度 N_T/cm^–3	能级位置 E_C – E_T/ev	俘获截面 $\sigma $/cm²	缺陷浓度 N_T/cm^–3
未经处理高剂量率	0.023	2.16 × 10^–23	9.17 × 10¹²	0.741	1.18 × 10^–15	4.03 × 10¹³
氢气浸泡高剂量率	0.152	7.13 × 10^–18	2.06 × 10¹³	0.648	7.40 × 10^–17	2.41 × 10¹³
未经处理低剂量率	0.152	7.12 × 10^–18	2.06 × 10¹³	0.649	7.42 × 10^–17	2.42 × 10¹³

DownLoad: CSV

[1]	Bi J S, Zeng C B, Gao L C, Liu G, Luo J J, Han Z S 2014 Chin. Phys. B 23 088505 Google Scholar
[2]	Enlow E W, Pease R L, Combs W 1991 IEEE Trans. Nucl. Sci. 38 1342 Google Scholar
[3]	翟亚红, 李平, 张国俊, 罗玉香, 范雪, 胡滨, 李俊宏, 张健, 束平 2011 物理学报 20 088501 Google Scholar Zhai Y H, Li P, Zhang G J, Luo Y X, Fan X, Hu B, Li J H, Zhang J, Shu P 2011 Acta Phys. Sin. 20 088501 Google Scholar
[4]	王义元, 陆妩, 任迪远, 郭旗, 余学峰, 何承发, 高博 2011 物理学报 60 096104 Google Scholar Wang Y Y, Lu W, Ren D Y, Guo Q, Yu X F, He C F, G B 2011 Acta Phys. Sin. 60 096104 Google Scholar
[5]	姜柯, 陆妩, 胡天乐, 王信, 郭旗, 何承发, 刘默涵, 李小龙 2015 物理学报 64 136103 Google Scholar Jiang K, Lu W, Hu T L, Wang X, Guo Q, He C F, Liu M H, Li X L 2015 Acta Phys. Sin. 64 136103 Google Scholar
[6]	Bi J S, Han Z S, Zhang X E, McCurdy M W, Reed R A, Schrimpf R D, Fleetwood D M, Alles M L, Weller R A, Linten D, Jurczak M, Fantini A 2013 IEEE Trans. Nucl. Sci. 60 4540 Google Scholar
[7]	Turflinger T L, Campbell, A B, Schmeichel W M, Walters R J, Krieg J E, Titus J L, Reeves M, Marshall P W, Pease R L 2003 IEEE Trans. Nucl. Sci. 50 2328 Google Scholar
[8]	Harris R D, Mcclure S S, Rax B G, Evans, R W, Jun I 2008 IEEE Trans. Nucl. Sci. 55 3088 Google Scholar
[9]	刘敏波, 陈伟, 姚志斌, 黄绍艳, 何宝平, 盛江坤, 肖志刚, 王祖军 2014 强激光与粒子束 26 214 Liu M B, Chen W, Yao Z B, Huang S Y, He B P, Sheng J K, Xiao Z G, Wang Z J 2014 High Power Laser and Particle Beams 26 214
[10]	马武英, 陆妩, 郭旗, 吴雪, 孙静, 邓伟, 王信, 吴正新 2014 原子能科学技术 48 2170 Google Scholar Ma Y W, Lu W, Guo Q, Wu X, Sun J, Deng W, Wang X, Wu Z X 2014 Atomic Energy Science and Technology 48 2170 Google Scholar
[11]	陆妩, 任迪远, 郑玉展, 王义元, 郭旗, 余学峰 2009 原子能科学技术 43 769 Lu W, Ren D Y, Zheng Y Z, Wang Y Y, Guo Q, Yu X F 2009 Atomic Energy Science and Technology 43 769
[12]	王先明, 刘楚湘, 艾尔肯·斯迪克 2007 核电子学与探测技术 27 1139 Google Scholar Wang X M, Liu C X, Sidike A 2007 Nuclear Electronics and Detection Technology 27 1139 Google Scholar
[13]	Li X L, Lu W, Wang X, Yu X, Guo Q, Sun J, Liu M H, Yao S, Wei X Y, He C F 2018 Chin. Phys. B 27 036102 Google Scholar
[14]	李小龙, 陆妩, 王信, 郭旗, 何承发, 孙静, 于新, 刘默寒, 贾金成, 姚帅, 魏昕宇 2018 物理学报 67 096101 Google Scholar Li X L, Lu W, Wang X, Guo Q, He C F, Sun J, Yu X, Liu M H, Jia J C, Yao S, Wei X Y 2018 Acta Phys. Sin. 67 096101 Google Scholar
[15]	刘方圆 2015 硕士学位论文 (哈尔滨: 哈尔滨工业大学) Liu F Y 2015 M. S. Thesis (Harbin: Harbin Institute of Technology) (in Chinese)
[16]	李兴冀, 陈朝基, 杨剑群, 刘超铭, 马国亮 2017 太赫兹科学与电子信息学报 15 690 Google Scholar Li X J, Chen C J, Yang J Q, Liu C M, Ma G L 2017 J. Terahertz Sci. Electron. Inform. Technol. 15 690 Google Scholar
[17]	栾晓楠 2016 硕士学位论文 (哈尔滨: 哈尔滨工业大学) Luan X N 2016 M. S. Thesis (Harbin: Harbin Institute of Technology) (in Chinese)
[18]	Kosier S L, Schrimpf R D, Nowlin R N, Fleetwood D M, DeLaus M, Pease R L, Combs W E, Wei A 1993 IEEE Trans. Nucl. Sci. 40 1276 Google Scholar
[19]	郑玉展, 陆妩, 任迪远, 王义元, 郭旗, 余学锋, 何承发 2009 物理学报 58 5560 Google Scholar Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Guo Q, Yu X F, He C F 2009 Acta Phys. Sin. 58 5560 Google Scholar
[20]	马武英, 王志宽, 陆妩, 席善斌, 郭旗, 何承发, 王信, 刘默寒, 姜柯 2014 物理学报 63 116101 Google Scholar Ma W Y, Wang Z K, Lu W, Xi S B, Guo Q, He C F, Wang X, Liu M H, Jiang K 2014 Acta Phys. Sin. 63 116101 Google Scholar
[21]	Liu C M, Li X J, Yang J Q, Bollmann J 2014 Nucl. Instrum. Meth. Phys. Res., Sect. A 735 462 Google Scholar
[22]	Rashkeev S N, Fleetwood D M, Schrimpf R D, Pantelides S T 2004 IEEE Trans. Nucl. Sci. 51 3158 Google Scholar
[23]	Chen X J, Barnaby H J, Adell P, Pease R L, Vermeire B, Holbert K E 2009 IEEE Trans. Nucl. Sci. 56 3196 Google Scholar
[24]	Fleetwood D M, Schrimpf R D, Pantelides S T, Pease R L, Dunham G W 2008 IEEE Trans. Nucl. Sci. 55 2986 Google Scholar
[25]	姜平国, 汪正兵, 闫永播, 刘文杰 2017 物理学报 66 246801 Google Scholar Jiang P G, Wang Z B, Yan Y B, Liu W J 2017 Acta Phys. Sin. 66 246801 Google Scholar
[26]	Mukhopadhyay S, Sushko P V, Stoneham A M, Shluger A L 2004 Phys. Rev. B 70 195203 Google Scholar
[27]	Lu Z Y, Nicklaw C J, Fleetwood D M, Schrimpf R D, Pantelides S T 2002 Phys. Rev. Lett. 89 285505 Google Scholar
[28]	Pease R L, Adell P C, Rax B G, Chen X J, Barnaby J H, Holbert K E 2008 IEEE Trans. Nucl. Sci. 55 3169 Google Scholar

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