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Gou Shi-Long, Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Sheng Jiang-Kun, Xue Yuan-Yuan, Pan Chen. Radiation mechanism of gate-controlled lateral PNP bipolar transistors in the hydrogen environment. Acta Physica Sinica,
2021, 70(15): 156101.
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Li Guo-Chang, Li Sheng-Tao. Review of charge deposition characteristics and trap parameters of dielectric in space electron radiation environment. Acta Physica Sinica,
2019, 68(23): 239401.
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Zhao Gu-Hao, Mao Shao-Jie, Zhao Shang-Hong, Meng Wen, Zhu Jie, Zhang Xiao-Qiang, Wang Guo-Dong, Gu Wen-Yuan. Principle and experimental study of self-stability of reflector based on two magneto-optical crystals and two mirrors under effect of temperature and radiation. Acta Physica Sinica,
2019, 68(16): 164202.
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Chen Shun-Sheng, Xiong Liang-Bin, Yang Chang-Ping. Interfacial trap dependent resistance switching effect in Nd0.7Sr0.3MnO3 ceramic. Acta Physica Sinica,
2016, 65(8): 087302.
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Zhao Qiao-Hua, Sun Ji-Hua. The variation features of the surface mixed layer depth in Erhai Lake and Taihu Lake in spring and autumn and their mechanism analyses. Acta Physica Sinica,
2013, 62(3): 039203.
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Sun Peng, Du Lei, Chen Wen-Hao, He Liang. A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation1/f noise. Acta Physica Sinica,
2012, 61(6): 067801.
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Sun Peng, Du Lei, Chen Wen-Hao, He Liang, Zhang Xiao-Fang. A radiation degradation model of metal-oxide-semiconductor field effect transistor. Acta Physica Sinica,
2012, 61(10): 107803.
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Li Wei-Hua, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin. Non-Gaussianity of noise in n-type metal oxide semiconductor field effect transistor. Acta Physica Sinica,
2009, 58(10): 7183-7188.
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Lin Ruo-Bing, Wang Xin-Juan, Feng Qian, Wang Chong, Zhang Jin-Cheng, Hao Yue. Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing. Acta Physica Sinica,
2008, 57(7): 4487-4491.
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Sun Guang-Ai, Hu Gang-Yi, Yang Mo-Hua, Xu Shi-Liu, Zhang Zheng-Fan, Liu Yu-Kui, He Kai-Quan, Zhong Yi. Study of conductive property for a N-VDMOS interface trap under X-ray radiation. Acta Physica Sinica,
2008, 57(3): 1872-1877.
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Li Rui-Min, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin. A 1/f noise based research of radiation induced interface trap buildup process. Acta Physica Sinica,
2007, 56(6): 3400-3406.
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Li Zhong-He, Liu Hong-Xia, Hao Yue. Mechanism of NBTI degradation in ultra deep submicron PMOSFET’s. Acta Physica Sinica,
2006, 55(2): 820-824.
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Bao Jun-Lin, Zhuang Yi-Qi, Du Lei, Li Wei-Hua, Wan Chang-Xing, Zhang Ping. A unified model for 1/f noise in n-channel and p-channel MOSFETs. Acta Physica Sinica,
2005, 54(5): 2118-2122.
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Han Yi-Wen. Using quantum tunneling method Hawking radiation of a static black hole horizon with a mass-quadrupole moment is studied. Acta Physica Sinica,
2005, 54(11): 5018-5021.
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Guo Guan-Jun, Su Lin, Bi Si-Wen. Polarimetric microwave radiation of wind-roughened sea surfaces. Acta Physica Sinica,
2005, 54(5): 2448-2452.
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Zhou Chun-Hong, Zheng You-Dou, Deng Yong-Zhen, Kong Yue-Chan, Chen Peng, Xi Dong-Juan, Gu Shu-Lin, Shen Bo, Zhang Rong, Jiang Ruo-Lian, Han Ping, Shi Yi. Study of interface trap states of AlN-Si(111) heterostructure*. Acta Physica Sinica,
2004, 53(11): 3888-3894.
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Yang Shu-Zheng. Discussion on the characteristics of the quantumradiation of unstationary and slowly-changing Reissner-Nordstr?m black hole. Acta Physica Sinica,
2004, 53(11): 4007-4014.
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Liu Hong-Xia, Zheng Xue-Feng, Hao Yao. . Acta Physica Sinica,
2002, 51(1): 163-166.
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Song Tai-Peng, Yao Guo-Zheng. . Acta Physica Sinica,
2002, 51(5): 1144-1148.
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ZHANG JIN-CHENG, HAO YUE, ZHU ZHI-WEI. STUDY ON HIGH ELECTRIC FIELD ANNEALING EFFECT IN THIN GATE OXIDE OF MOS STRUCTURE. Acta Physica Sinica,
2001, 50(8): 1585-1589.
doi: 10.7498/aps.50.1585
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