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Zhang Zhi-Wei, Zhao Cui-Lan, Sun Bao-Quan. 1.3 μm single photon emission from InAs/GaAs quantum dots. Acta Physica Sinica,
2018, 67(23): 237802.
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Kang Da, Luo Bin, Yan Lian-Shan, Pan Wei, Zou Xi-Hua. Supperssion of higher order modes in gain-guided index-antiguided planar waveguide laser. Acta Physica Sinica,
2018, 67(10): 104204.
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Zhang Wei, Shi Zhen-Wu, Huo Da-Yun, Guo Xiao-Xiang, Peng Chang-Si. Effects of in-situ surface modification by pulsed laser on InAs/GaAs (001) quantum dot growth. Acta Physica Sinica,
2016, 65(11): 117801.
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Liu Ke, Ma Wen-Quan, Huang Jian-Liang, Zhang Yan-Hua, Cao Yu-Lian, Huang Wen-Jun, Zhao Cheng-Cheng. Three-color InAs/GaAs quantum dot infrared photodetector with AlGaAs inserting layer. Acta Physica Sinica,
2016, 65(10): 108502.
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Wei Xiao-Xu, Cheng Ying, Huo Da, Zhang Yu-Han, Wang Jun-Zhuan, Hu Yong, Shi Yi. PL enhancement of MoS2 by Au nanoparticles. Acta Physica Sinica,
2014, 63(21): 217802.
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Chen Li-Jing, Li Wei-Xue, Dai Jian-Feng, Wang Qing. First-prinicples study of Mn-N co-doped p-type ZnO. Acta Physica Sinica,
2014, 63(19): 196101.
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Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi. Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots. Acta Physica Sinica,
2013, 62(20): 207303.
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Zhao Li, Liu Dong-Yang, Liu Dong-Mei, Chen Ping, Zhao Yi, Liu Shi-Yong. Analysis of organic photovoltaic devices with MoOx doped 4,4,4-tris(N-(3-methylphenyl)-N- phenylamin) triphenylamine as hole transport layer. Acta Physica Sinica,
2012, 61(8): 088802.
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Yao Guang-Rui, Fan Guang-Han, Zheng Shu-Wen, Ma Jia-Hong, Chen Jun, Zhang Yong, Li Shu-Ti, Su Shi-Chen, Zhang Tao. First-principles study of p-type ZnO by Te-N codoping. Acta Physica Sinica,
2012, 61(17): 176105.
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Chen Jun, Fan Guang-Han, Zhang Yun-Yan. Investigation of spectral regulation in dual- wavelength light-emitting diodes by using the selective p-doped barriers. Acta Physica Sinica,
2012, 61(8): 088502.
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Wan Wen-Jian, Yao Ruo-He, Geng Kui-Wei. Electronic structure of CuAlS2 doped with Mg and Zn. Acta Physica Sinica,
2011, 60(6): 067103.
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Deng Bei, Sun Hui-Qing, Guo Zhi-You, Gao Xiao-Qi. Theoretical analysis on the improvement of p-type ZnO by B-N codoping. Acta Physica Sinica,
2010, 59(2): 1212-1218.
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Dang Sui-Hu, Li Chun-Xia, Han Pei-De. First-principles calculation of CdS electronic structure doped with Mg and Cu. Acta Physica Sinica,
2009, 58(6): 4137-4143.
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Cai Lu-Gang, Wu Jian. Theoretical analysis and characterization of injection current distribution and influences on optical near-field modes in gain-guided vertical-cavity surface-emitting lasers. Acta Physica Sinica,
2008, 57(6): 3531-3537.
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Wang Jing-Wei, Bian Ji-Ming, Sun Jing-Chang, Liang Hong-Wei, Zhao Jian-Ze, Du Guo-Tong. Ag doped p-type ZnO films and its optical and electrical properties. Acta Physica Sinica,
2008, 57(8): 5212-5216.
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Ding Shao-Feng, Fan Guang-Han, Li Shu-Ti, Xiao Bing. First-principles study of the p-type doped InN. Acta Physica Sinica,
2007, 56(7): 4062-4067.
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Yuan Ning-Yi, Li Jin-Hua, Fan Li-Ning, Wang Xiu-Qin, Xie Jian-Sheng. Preparation and mechanism of p-type ZnO films formed by modified ion beam enhanced deposition method. Acta Physica Sinica,
2006, 55(7): 3581-3584.
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Tong Cun-Zhu, Niu Zhi-Chuan, Han Qin, Wu Rong-Han. Design and analysis of 1.3μm GaAs-based quantum dot vertical-cavity surface-emitting lasers. Acta Physica Sinica,
2005, 54(8): 3651-3656.
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Pu Xiao-Yun, Yang Zheng, Jiang Nan, Chen Yong-Kang, Dai Hong. Observation of stimulated Raman scattering of weak-gain Raman modes by means of lasing gain. Acta Physica Sinica,
2003, 52(10): 2443-2448.
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QI MING, LUO JIN-SHENG, J. SHIRAKASHI, S. NOZAKI, K. TAKAHASHI, E. TOKUMITSU, M. KONAGAI. RAMAN SCATTERING STUDY OF LO PHONON-PLASMON COUPLED MODE IN HEAVILY CARBON DOPED p-TYPE GaAs. Acta Physica Sinica,
1993, 42(6): 963-968.
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