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Preparation and photoluminescence study of patterned substrate quantum wires

Wang Xiu-Ping Yang Xiao-Hong Han Qin Ju Yan-Ling Du Yun Zhu Bin Wang Jie Ni Hai-Qiao He Ji-Fang Wang Guo-Wei Niu Zhi-Chuan

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Preparation and photoluminescence study of patterned substrate quantum wires

Wang Xiu-Ping, Yang Xiao-Hong, Han Qin, Ju Yan-Ling, Du Yun, Zhu Bin, Wang Jie, Ni Hai-Qiao, He Ji-Fang, Wang Guo-Wei, Niu Zhi-Chuan
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  • GaAs/AlGaAs quantum wires grown by molecular beam epitaxy on a V-groove patterned substrate was described. The cross section of scan electron microscopy (SEM) image shows that crescent-type quantum wire were formed at the V groove bottom, which is a triangle of about 60nm in width and 14nm in height. Two peaks at 793.7nm and 799.5nm of photoluminescence spectrum at 87K verified the existence of quantum wires. Theoretical calculation gives 8meV blue shift, which is proved to be casued by lateral confinement compared with quantum well of the same width.
    [1]

    Song Y X, Zheng W M,Liu J, Chu N N, Li S M 2009 Acta Phys. Sin. 58 6471 (in Chinese) [宋迎新、 郑卫民、 刘 静、 初宁宁、 李素梅 2009 物理学报 58 6471]

    [2]

    Auslaender O M, Yacoby A 2002 Science 295 825

    [3]

    Wang X L, Voliotis V 2006 J. Appl. Phys. 99 121301

    [4]

    Yan R X, Gargas D, Yang P D 2009 Nature Photonics 3 569

    [5]

    Divochiy A, Marsili F, Bitauld D 2008 Nature Photonics 2 302

    [6]

    Pekola J P, Vartiainen J J 2008 Nature Physics 4 120

    [7]

    Xia Y, Yang P, Sun Y, Wu Y, Mayers B, Gates B, Yin Y, Kim F, Yan H 2003 Advanced Materials 15 353

    [8]

    Li H, Guo H Z,Lu C, Li L, Gao J 2008 Acta Phys. Sin. 57 5863 (in Chinese) [李 宏、 郭华忠、 路 川、 李 玲 、 高 洁 2008 物理学报 57 5863]

    [9]

    Kapon E, Hwang D M, Bhat R 1989 Phys. Rev. Lett. 63 430

    [10]

    Rinaldi R, Cingolani R 1994 Phys. Rev. Lett. 73 2899

    [11]

    Vouilloz F, Oberli D Y, Dupertuis M A, Gustafsson A, Reinhardt F, Kapon E 1997 Phys. Rev. Lett. 78 1580

    [12]

    Wang X L, Ogura M, Matsuhata H 1995 Appl. Phys. Lett. 67 3629

    [13]

    Wang X L, Voliotis V, Matsuhata H 1995 Appl. Phys. Lett. 66 1506

    [14]

    Wang X L, Ogura M, Matsuhata H 1997 J. Cryst. Growth 171 341

    [15]

    Wang X L, Voliotis V 2000 J. Cryst. Growth 221 556

    [16]

    Cheng W Q, Cai L H, Chen H, Zhou J M, Xie X G, Mei X B, Zhao T N, Zhu G 1995 Acta Phys. Sin. 44 1429 (in Chinese) [程文芹、 蔡丽红、 陈 弘、 周均铭、 谢小刚、 梅笑冰、 赵铁男、 朱 恪 1995 物理学报 44 142]

    [17]

    Shen X Q, Tanaka M 1994 J. Cryst. Growth 135 85

    [18]

    Sugaya T, Nakagawa T, Sugiyama Y 1998 J. Cryst. Growth 186 27

    [19]

    Liu G S, Liu S, Wang W X, Zhao H M, Liu B L, Jiang Z W, Gao H C, Wang J, Huang Q A, Chen H, Zhou J M 2007 Acta Phys. Sin. 56 3355 (in Chinese) [刘桂生、 刘 肃、 王文新、 〖20] Gao H L, Zeng Y P 2008 Chin. Phys. B 17 1119

    [20]

    Hersee S D, Barbier E, Blondeau R 1986 J. Cryst. Growth 77 310

    [21]

    Haider N, Wilby M R, Vvedensky D D 1993 Appl. Phys. Lett. 62 3108

    [22]

    Jia W Y, Lu Z D,Huang Y, Zhou J M, Li Y K, Wang Y Y 1988 Acta Phys. Sin. 37 6 (in Chinese) [贾惟义、 鲁志东、 黄 绮、 周均铭、 李永康、 王彦云 1988 物理学报 37 6]

    [23]

    Li Z F, Lu W, Liu X Q, Shen X C, Fu Y, Willander M, Tan H H, Jagadish C 2000 Acta Phys. Sin. 49 1809 (in Chinese) [李志锋、 陆 卫、 刘兴权、 沈学础、 Fu Y, Willander M, Tan H H, Jagadish C 2000 物理学报 49 1809]

    [24]

    Jin S R, Xu Z Y 1994 Acta Phys. Sin. 43 384 (in Chinese) [金世荣、 徐仲英 1994 物理学报 43 384]

    [25]

    Niu Z C, Zhou Z Q, Lin Y W, Li X F, Zhang Y, Hu X W, Lü Z D, Xu Z Y 1997 Acta Phys. Sin. 46 969 (in Chinese) [牛智川、周增圻、林耀望、李新峰、张 益、胡雄伟、吕振东、徐仲英1997 物理学报46 969]

    [26]

    Casey H C 1978 Heterostructure Lasers Part A: Fundamental Principle (New York: Academic Press) p188

    [27]

    Shu Q, Shu Y C, Zhang G J, Liu R B, Yao J H, Pi B, Xing X D, Lin Y W, Xu J J, Wang Z G 2006 Acta Phys. Sin. 55 1379 (in Chinese) [舒 强、 舒永春、 张冠杰、 刘如彬、 姚江宏、 皮 彪、 邢晓东、 林耀望、 许京军、 王占国 2006 物理学报 55 1379]

    [28]

    Adachi S 1994 GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties (Singapore:World Scientific Press) p151

    [29]

    Adachi S 1994 GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties (Singapore: World Scientific Press) p254

  • [1]

    Song Y X, Zheng W M,Liu J, Chu N N, Li S M 2009 Acta Phys. Sin. 58 6471 (in Chinese) [宋迎新、 郑卫民、 刘 静、 初宁宁、 李素梅 2009 物理学报 58 6471]

    [2]

    Auslaender O M, Yacoby A 2002 Science 295 825

    [3]

    Wang X L, Voliotis V 2006 J. Appl. Phys. 99 121301

    [4]

    Yan R X, Gargas D, Yang P D 2009 Nature Photonics 3 569

    [5]

    Divochiy A, Marsili F, Bitauld D 2008 Nature Photonics 2 302

    [6]

    Pekola J P, Vartiainen J J 2008 Nature Physics 4 120

    [7]

    Xia Y, Yang P, Sun Y, Wu Y, Mayers B, Gates B, Yin Y, Kim F, Yan H 2003 Advanced Materials 15 353

    [8]

    Li H, Guo H Z,Lu C, Li L, Gao J 2008 Acta Phys. Sin. 57 5863 (in Chinese) [李 宏、 郭华忠、 路 川、 李 玲 、 高 洁 2008 物理学报 57 5863]

    [9]

    Kapon E, Hwang D M, Bhat R 1989 Phys. Rev. Lett. 63 430

    [10]

    Rinaldi R, Cingolani R 1994 Phys. Rev. Lett. 73 2899

    [11]

    Vouilloz F, Oberli D Y, Dupertuis M A, Gustafsson A, Reinhardt F, Kapon E 1997 Phys. Rev. Lett. 78 1580

    [12]

    Wang X L, Ogura M, Matsuhata H 1995 Appl. Phys. Lett. 67 3629

    [13]

    Wang X L, Voliotis V, Matsuhata H 1995 Appl. Phys. Lett. 66 1506

    [14]

    Wang X L, Ogura M, Matsuhata H 1997 J. Cryst. Growth 171 341

    [15]

    Wang X L, Voliotis V 2000 J. Cryst. Growth 221 556

    [16]

    Cheng W Q, Cai L H, Chen H, Zhou J M, Xie X G, Mei X B, Zhao T N, Zhu G 1995 Acta Phys. Sin. 44 1429 (in Chinese) [程文芹、 蔡丽红、 陈 弘、 周均铭、 谢小刚、 梅笑冰、 赵铁男、 朱 恪 1995 物理学报 44 142]

    [17]

    Shen X Q, Tanaka M 1994 J. Cryst. Growth 135 85

    [18]

    Sugaya T, Nakagawa T, Sugiyama Y 1998 J. Cryst. Growth 186 27

    [19]

    Liu G S, Liu S, Wang W X, Zhao H M, Liu B L, Jiang Z W, Gao H C, Wang J, Huang Q A, Chen H, Zhou J M 2007 Acta Phys. Sin. 56 3355 (in Chinese) [刘桂生、 刘 肃、 王文新、 〖20] Gao H L, Zeng Y P 2008 Chin. Phys. B 17 1119

    [20]

    Hersee S D, Barbier E, Blondeau R 1986 J. Cryst. Growth 77 310

    [21]

    Haider N, Wilby M R, Vvedensky D D 1993 Appl. Phys. Lett. 62 3108

    [22]

    Jia W Y, Lu Z D,Huang Y, Zhou J M, Li Y K, Wang Y Y 1988 Acta Phys. Sin. 37 6 (in Chinese) [贾惟义、 鲁志东、 黄 绮、 周均铭、 李永康、 王彦云 1988 物理学报 37 6]

    [23]

    Li Z F, Lu W, Liu X Q, Shen X C, Fu Y, Willander M, Tan H H, Jagadish C 2000 Acta Phys. Sin. 49 1809 (in Chinese) [李志锋、 陆 卫、 刘兴权、 沈学础、 Fu Y, Willander M, Tan H H, Jagadish C 2000 物理学报 49 1809]

    [24]

    Jin S R, Xu Z Y 1994 Acta Phys. Sin. 43 384 (in Chinese) [金世荣、 徐仲英 1994 物理学报 43 384]

    [25]

    Niu Z C, Zhou Z Q, Lin Y W, Li X F, Zhang Y, Hu X W, Lü Z D, Xu Z Y 1997 Acta Phys. Sin. 46 969 (in Chinese) [牛智川、周增圻、林耀望、李新峰、张 益、胡雄伟、吕振东、徐仲英1997 物理学报46 969]

    [26]

    Casey H C 1978 Heterostructure Lasers Part A: Fundamental Principle (New York: Academic Press) p188

    [27]

    Shu Q, Shu Y C, Zhang G J, Liu R B, Yao J H, Pi B, Xing X D, Lin Y W, Xu J J, Wang Z G 2006 Acta Phys. Sin. 55 1379 (in Chinese) [舒 强、 舒永春、 张冠杰、 刘如彬、 姚江宏、 皮 彪、 邢晓东、 林耀望、 许京军、 王占国 2006 物理学报 55 1379]

    [28]

    Adachi S 1994 GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties (Singapore:World Scientific Press) p151

    [29]

    Adachi S 1994 GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties (Singapore: World Scientific Press) p254

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Publishing process
  • Received Date:  12 April 2010
  • Accepted Date:  28 June 2010
  • Published Online:  05 January 2011

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