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A wavelength tunable resonant cavity enhanced photo-detector grown on GaAs is fabricated. The quantum wells of In0.25Ga0.75As/GaAs in the active region are grown by molecular beam epitaxy. The peak of the response spectrum at 0 work bias is located at 1071 nm. When the tuning voltage rises from 0 V to 21 V, the peak shows a blue shift of 23 nm, reaching 1048 nm. Statistical results show that there is a stable accurate corresponding relation between the tuning voltage and the response peak. The relation is approximately linear when the tuning voltage is greater than 5 V. Some theoretical analysis is performed on the test results.
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Keywords:
- GaAs /
- resonant cavity enhanced photo-detector /
- high stability /
- linear tuning
[1] Selim ü M, Samuel S 1995 J. Appl. Phys. 78 607
[2] Saif I M, Ming C W 2003 Proc. SPIE 5246 448
[3] Kalman R F,Fan J C, Kazovsky L G 1994 IEEE J. Lightwave Technol. 12 1263
[4] Tulchinsky D A, Boos J B, Park D, Goetz P G, Rabinovich W S, Williams K J 2008 IEEE J. Lightwave Technol. 26 408
[5] Larson M C 1996 Ph. D. Dissertation (Stanford: Stanford University)
[6] Pezeshki B, Harris J S 1992 Patent U S 5 291 502
[7] Wu M S, Vail E C, Li G S, Yuen W, Chang H C J 1996 IEEE Photon.Technol. Lett. 8 98
[8] Larson M C, Massengale A R, Harris J S 1996 Electron. Lett. 32 330
[9] Li M Y, Yuen W, Chang H C J 1997 Electron. Lett. 33 1122
[10] Vail E C, Li G S, Yuen W, Chang H C J 1997 IEEE J. Sel. Topics Quantum Electron. 3 691
[11] Chang H C J 2000 IEEE J. Sel. Topics Quantum Electron. 6 978
[12] Kang J F, Zheng Q 1984 Applied Film Optics (Shanghai: Shanghai Scientific and Technical Publishers ) p94 (in Chinese) [康晋发,郑权 1984应用薄膜光学 (上海 :上海科学技术出版社)第94页]
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[1] Selim ü M, Samuel S 1995 J. Appl. Phys. 78 607
[2] Saif I M, Ming C W 2003 Proc. SPIE 5246 448
[3] Kalman R F,Fan J C, Kazovsky L G 1994 IEEE J. Lightwave Technol. 12 1263
[4] Tulchinsky D A, Boos J B, Park D, Goetz P G, Rabinovich W S, Williams K J 2008 IEEE J. Lightwave Technol. 26 408
[5] Larson M C 1996 Ph. D. Dissertation (Stanford: Stanford University)
[6] Pezeshki B, Harris J S 1992 Patent U S 5 291 502
[7] Wu M S, Vail E C, Li G S, Yuen W, Chang H C J 1996 IEEE Photon.Technol. Lett. 8 98
[8] Larson M C, Massengale A R, Harris J S 1996 Electron. Lett. 32 330
[9] Li M Y, Yuen W, Chang H C J 1997 Electron. Lett. 33 1122
[10] Vail E C, Li G S, Yuen W, Chang H C J 1997 IEEE J. Sel. Topics Quantum Electron. 3 691
[11] Chang H C J 2000 IEEE J. Sel. Topics Quantum Electron. 6 978
[12] Kang J F, Zheng Q 1984 Applied Film Optics (Shanghai: Shanghai Scientific and Technical Publishers ) p94 (in Chinese) [康晋发,郑权 1984应用薄膜光学 (上海 :上海科学技术出版社)第94页]
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