Effect of copper precipitation on the formation of denuded zone in Czchralski silicon

Wang Yong-Zhi; Xu Jin; Wang Na-Ting; Ji Chuan; Zhang Guang-Chao

doi:10.7498/aps.61.016105

Abstract

The influence of copper precipitation on the formation of denuded zone (DZ) in Czochralski silicon has been systematically investigated by means of optical microscopy. It was found that, for conventional furnace high-low-high annealing, the copper precipitates colonies generated along the whole crosssection in the specimens contaminated by copper impurity at the first step of the heat treatment, thus no DZ generated. While in other specimens, DZ formed. Additionally, it was found that the contamination temperature can influence significantly the thermodynamics and kinetic process of the formation of copper precipitates. The phenomena also occurred in the specimens underwent rapid thermal-low-high annealing. On the basis of the step by step investigation, it was revealed that the copper precipitates temperature and point defects type can influence the formation of DZ to a great extent.

Keywords:

Authors and contacts

1.
College of Materials, Xiamen University, Xiamen 361005, China;
2.
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;
3.
Key Laboratory for Fire Retardant Materials of Fujian Province, Xiamen 361005, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 50902116, 50832006), Program for New Century Excellent Talents in Fujian Province University, the Opening Project of State Key Laboratory of Silicon Materials, China (Grant No. SKL2009-11), and the Scientific and Technological Innovation Platform of Fujian Province, China (Grant No. 2009J1009).

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Cited By

[1]	ThomPson S, Parthasarathy S 2006 Mater. Today 9 20
[2]	Liu B C, Huang T Y 2006 China Materials Engineering Dictionary (Vol. 11) (Beijing: Chemical Industry Press) p116–119 (in Chinese) [柳百成, 黄天佑 2006 中国材料工程大典( 11 卷) (北京：化学工业出版社) 第116-119页]
[3]	Bergholz W, Gilles D 2000 Phys. Stat. Sol. B 222 5
[4]	Myers S M, Seibt M, Schroeter W 2000 J. Appl. Phys. 88 3795
[5]	Istratov A A, Weber E R 1998 Appl. Phys. A 66 123
[6]	Andrei A, Istratov, Weber E R 2002 J. Electrochem. Soc. 149 G21
[7]	Hamet J F, Abdelaoui R, Nouet G 1990 J. Appl. Phys. 68 638
[8]	WangWY, Yang D R, Yu X G, Que D L 2008 J. Mater. Sci. :Mater. Electron. 19 32
[9]	Shimura F,Willardson R K, Beer A C,Weber E R 1994 Oxygen in Silicon, Series: Semiconductors and Semimetals (Vol. 42) (Boston, MA: Academic Press) p41
[10]	Xu J, Li F L, Yang D R 2007 Acta Phys. Sin. 56 4113 (in Chinese) [徐进, 李福龙, 杨德仁直拉硅单晶中原生氧沉淀的透射电镜研究 2007 物理学报 56 4113]
[11]	Cui C, Ma X Y, Yang D R 2008 Acta Phys. Sin. 57 1037 (in Chinese) [崔灿, 马向阳, 杨德仁 2008 物理学报 57 1037]
[12]	Xi Z Q, Chen J, Yang D R, Lawerenz A, Moeller H J 2000 J. Appl. Phys. 97 094909
[13]	Bains S K, Griffiths D P, Wilkes J G, Series R W, Barraclough K G 1990 J. Electrochem. Soc. 137 647
[14]	Falster R, Gambaro D, OlmoM1998 The Fifth International Symposium High Purity Silicon V Boston, April 13–17, 1998 pp 135–146
[15]	Falster R, Voronkov V V 2000 Mater. Sci. Engineer. B 7387 94
[16]	Falster R, Pagan M, Gambaro D 1997 Proceeding of the 7th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology Belgium, October 5–7, 1997 pp129–136
[17]	Katsukama, Kuim O, Sueoka K 2002 Nucl. Instr. Meth. in Phys. Res. 186 46254
[18]	Akhmetov V, Kissinger G, von Ammon W 2009 Physica B 404 4572
[19]	Xi Z Q, Yang D R, Xu J, Ji Y J, Que D L, Moeller H J 2003 Appl. Phys. Lett. 83 3048
[20]	McHugo S A, Mohammed A, Thompson A C, Lai B, Cai Z 2002 J. Appl. Phys. 91 6396
[21]	Istratov A A, Flink C, Hieslmair H, Weber E R, Heiser T 1998 Phys. Rev. Lett. 81 1243
[22]	Weber E R 1983 Appl. Phys. A: Solids Surf. 30 1
[23]	Gay N, Martinuzzi S 1997 Appl. Phys. Lett. 70 2568
[24]	McHugo S A, Flink C 2000 Appl. Phys. Lett. 77 3598
[25]	Laczik Z 1992 Ph.D. Dissertation (Oxford County: University of Oxford)
[26]	Falster R, Voronkov V V, Quast F 2000 Phys. Status Solidi B 222 219
[27]	Xi Z Q, Yang D R, Chen J, Xu J, Ji Y J, Que D L, Moeller H J 2004 Semicond. Sci. Technol. 19 299
[28]	Shen B, Jablonski J, Sekeguchi T, Sumino K 1996 Jpn. J. Appl. Phys. 35 4187
[29]	Borghesi A, Pivac B, Sassella A, Stella A 1995 J. Appl. Phys. 77 4169
[30]	Seibt M, Graff K 1988 J. Appl. Phys. 63 4444
[31]	Kola R R, Rozgonyi G A, Li J, Rogers W B, Tan T Y, Bean K E, Lindberg K 1989 Appl. Phys. Lett. 55 2108
[32]	Xu J, Yang D R, Chu J 2004 Acta Phys. Sin. 53 550 (in Chinese) [徐进,杨德仁,储佳 2004 物理学报 53 550]

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