[1] |
Zhang Ding, Zhu Yu-Ying, Wang Heng, Xue Qi-Kun. Josephson effect in twisted cuprates. Acta Physica Sinica,
2023, 72(23): 237402.
doi: 10.7498/aps.72.20231815
|
[2] |
Zhang Ni1\2, Liu Ding1\2, Feng Xue-Liang. Effects of process parameters on melt-crystal interface in Czochralski silicon crystal growth. Acta Physica Sinica,
2018, 67(21): 218701.
doi: 10.7498/aps.67.20180305
|
[3] |
Zhang Guang-Chao, Xu Jin. Investigation of copper precipitation in denuded zone in Czochralski silicon. Acta Physica Sinica,
2013, 62(7): 076103.
doi: 10.7498/aps.62.076103
|
[4] |
Ji Chuan, Xu Jin. Effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon p/p+ epitaxial wafer. Acta Physica Sinica,
2012, 61(23): 236102.
doi: 10.7498/aps.61.236102
|
[5] |
Wang Yong-Zhi, Xu Jin, Wang Na-Ting, Ji Chuan, Zhang Guang-Chao. Effect of copper precipitation on the formation of denuded zone in Czchralski silicon. Acta Physica Sinica,
2012, 61(1): 016105.
doi: 10.7498/aps.61.016105
|
[6] |
Xu Jin, Li Fu-Long, Yang De-Ren. Grown-in oxygen precipitates in czochralski silicon investigated by transmission electron microscopy. Acta Physica Sinica,
2007, 56(7): 4113-4116.
doi: 10.7498/aps.56.4113
|
[7] |
Deng Xiao-Liang, Zhu Wen-Jun, He Hong-Liang, Wu Deng-Xue, Jing Fu-Qian. Initial dynamic behavior of nano-void growth in single-crystal copper under shock loading along 〈111〉 direction. Acta Physica Sinica,
2006, 55(9): 4767-4773.
doi: 10.7498/aps.55.4767
|
[8] |
Xu Jin, Yang De-Ren, Chu Jia, Ma Xiang-Yang, Que Duan-Lin. Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscope. Acta Physica Sinica,
2004, 53(2): 550-554.
doi: 10.7498/aps.53.550
|
[9] |
LI MING, MAI ZHEN-HONG, CUI SHU-PAN. CHARACTERIZATION OF MICRO-DEFECTS IN SILICON SINGLE CRYSTALS BY ANALYZING THE PENDELL?SUNG FRINGES. Acta Physica Sinica,
1994, 43(1): 78-83.
doi: 10.7498/aps.43.78
|
[10] |
YANG PING. BEHAVIOUR OF X-RAY DIFFRACTION FROM UNIFORMLY BENT Si CRYSTAL. Acta Physica Sinica,
1992, 41(2): 267-271.
doi: 10.7498/aps.41.267
|
[11] |
Duan Pei Gao Ping Tang Ji-you. A STUDY ON AS-GROWN SWIRL DEFECTS IN CZ SILICON CRYSTAL. Acta Physica Sinica,
1987, 36(8): 986-991.
doi: 10.7498/aps.36.986
|
[12] |
CHU XI, MAI ZHEN-HONG, DAI DAO-YANG, CUI SHU-FAN, GE PEI-WEN. STUDY ON A PLANE-LIKE PRECIPITATE IN SILICON SINGLE CRYSTAL BY X-RAY TOPOGRAPHIC METHOD. Acta Physica Sinica,
1987, 36(3): 408-410.
doi: 10.7498/aps.36.408
|
[13] |
HE XIAN-CHANG. EXPERIMENTAL INVESTIGATION OF THE DISTRIBUTION OF DEFECTS CAUSED BY HYDROGEN IN SILICON SINGLE CRYSTALS. Acta Physica Sinica,
1984, 33(5): 694-695.
doi: 10.7498/aps.33.694
|
[14] |
MAI ZHEN-HONG, CUI SHU-FAN, LIN JIAN, Lü YAN. STUDY OF HYDROGEN-INDUCED DEFECTS IN FLOATING ZONE SILICON GROWN IN HYDROGEN ATMOSPHERE. Acta Physica Sinica,
1984, 33(7): 921-926.
doi: 10.7498/aps.33.921
|
[15] |
GAO YU-ZUN. TEM INVESTIGATION OF OXYGEN PRECIPITATES AND INDUCED DEFECTS IN ANNEALED CZ-Si SINGLE CRYSTAL. Acta Physica Sinica,
1984, 33(6): 840-844.
doi: 10.7498/aps.33.840
|
[16] |
MAI ZHEN-HONG, CUI SHU-FAN, FU QUAN-GUI, LIN RU-GAN, ZHANG JIN-FU. OBSERVATION ON “AS GROWN” MICRODEFECTS IN CZ SILICON SINGLE CRYSTAL. Acta Physica Sinica,
1983, 32(5): 685-688.
doi: 10.7498/aps.32.685
|
[17] |
YANG CHUAN-ZHENG, ZHU JIAN-SHENG. INVESTIGATION OF THE DEFECTS IN SILICON SINGLE CRYSTALS GROWN BY FLOATING-ZONE METHOD IN THE ATMOSPHERE CONTAINING HYDROGEN. Acta Physica Sinica,
1982, 31(3): 278-284.
doi: 10.7498/aps.31.278
|
[18] |
CUI SHU-FAN, GE PEI-WEN, ZHAO YA-QIN, WU LAN-SHENG. THE PRESENCE OF Si-H BONDS IN Si SINGLE CRYSTALS AND ITS INFLUENCES. Acta Physica Sinica,
1979, 28(6): 791-795.
doi: 10.7498/aps.28.791
|
[19] |
. . Acta Physica Sinica,
1963, 19(2): 134-138.
doi: 10.7498/aps.19.134
|
[20] |
TSAI SHU-TANG. SEDIMENTATION MOTION OF SAND PARTICLES IN MOVING WATER (Ⅱ)——SEDIMENTATION OF SAND PARTICLES IN LAMINAR FLOW. Acta Physica Sinica,
1957, 13(5): 399-408.
doi: 10.7498/aps.13.399
|